Method for producing a microsystem having pixels
A Method for producing a microsystem ( 1 ) with pixels includes: producing a thermal silicon oxide layer on the surface of a silicon wafer as a base layer ( 5 ) by oxidation of the silicon wafer; producing a silicon oxide thin layer on the base layer as a carrier layer ( 6 )by thermal deposition; producing a platinum layer on the carrier layer by thermal deposition, whereby an intermediate product is produced; cooling the intermediate product to room temperature; pixel-like structuring of the platinum layer by removing surplus areas of the platinum layer, whereby bottom electrodes ( 8, 12 ) of the pixels ( 7, 8 ) are formed in pixel shape on the carrier layer in remaining areas; removing material on the side of the silicon wafer facing away from the base layer, so a frame ( 3 ) remains and a membrane ( 4 ) formed by the base layer and the carrier layer is spanned by the frame.
1. A method for producing a microsystem with pixels, comprising:
providing a silicon wafer;
producing a thermal silicon oxide layer on the surface of the silicon wafer as a base layer with a thickness between 200 nm and 1000 nm by oxidation of the silicon wafer;
producing a silicon oxide thin layer directly on the base layer as a carrier layer with a thickness between 100 nm and 700 nm by a thermal deposition method;
producing a platinum layer directly on the carrier layer with a thermal deposition method with a thickness between 40 nm and 200 nm, whereby an intermediate product comprising the silicon wafer, the base layer, the carrier layer and the platinum layer is produced;
cooling the intermediate product to room temperature;
structuring the platinum layer with pixels by removing surplus areas of the platinum layer, whereby bottom electrodes of the pixels are formed in a pixel shape on the carrier layer in remaining areas;
removing material on a side of the silicon wafer facing away from the base layer, so that a frame remains and a membrane formed by the base layer and the carrier layer is spanned by the frame; and
finalizing of the microsystem.
2. The method according to claim 1 , wherein the platinum layer is sputtered between 300° C. and 550° C.
3. The method according to claim 1 , further comprising: producing a lead-zirconate-titanate layer directly on the platinum layer with a thermal deposition method and a thickness between 0.2 μm and 5 μm, whereby the intermediate product comprises the lead-zirconate-titanate layer.
4. The method according to claim 3 , wherein during the pixel structuring of the platinum layer, the lead-zirconate-titanate layer is simultaneously structured by removing surplus areas of the lead-zirconate-titanate layer, whereby lead-zirconate-titanate pixel parts of the pixels are formed on the bottom electrodes in remaining areas of the lead-zirconate-titanate layer.
5. The method according to claim 3 , further comprising: producing semi-transparent, electrically conductive electrode layer directly on the lead-zirconate-titanate layer with a thermal deposition method, whereby the intermediate product comprises the electrode layer.
6. The method according to claim 5 , wherein the electrode layer comprises platinum or a nickel-iron-compound or a nickel-chrome-compound.
7. The method according to claim 6 , wherein during the pixel structuring of the platinum layer and the lead-zirconate-titanate layer, the electrode layer is structured simultaneously by removing surplus areas of the second platinum layer, whereby head electrodes of the pixels are formed on the lead-zirconate-titanate pixel in remaining areas of the second platinum layer.
8. The method according to claim 1 , wherein the thermal deposition method is a sputter method.