Use of inverse quasi-epitaxy to modify order during post-deposition processing of organic photovoltaics

1. A method for fabricating an organic photovoltaic device comprising:

depositing an amorphous organic layer and a crystalline organic layer over a first electrode, wherein the amorphous organic layer and the crystalline organic layer contact one another at an interface;

annealing the amorphous organic layer and the crystalline organic layer for a time sufficient to induce at least partial crystallinity in the amorphous organic layer; and

depositing a second electrode over the amorphous organic layer and the crystalline organic layer; and

wherein the amorphous organic layer comprises at least one material that undergoes inverse-quasi epitaxial (IQE) alignment to a material of the crystalline organic layer as a result of the annealing.

2. The method of claim 1 , wherein the annealing is chosen from solvent vapor annealing and thermal annealing.

3. The method of claim 1 , wherein the amorphous organic layer and the crystalline organic layer comprise different small molecule materials.

4. The method of claim 1 , wherein the at least one material that undergoes IQE alignment is a donor or an acceptor relative to the material of the crystalline organic layer.

5. The method of claim 4 , wherein the at least one material that undergoes IQE is a donor relative to the material of the crystalline organic layer, and the material of the crystalline organic layer comprises a fullerene or a derivative thereof.

6. The method of claim 1 , wherein the at least one material that undergoes IQE alignment is a donor relative to the material of the crystalline organic layer, wherein the at least one material comprises a squaraine or derivative thereof.

7. The method of claim 1 , wherein the at least one material that undergoes IQE alignment exhibits a lattice mismatch to a material of the crystalline organic layer in at least one crystal direction and crystal dimension of less than 10%, upon crystallization.

8. The method of claim 1 , wherein the at least one material that undergoes IQE alignment exhibits a lattice mismatch to a material of the crystalline organic layer in at least one crystal direction and crystal dimension of less than 5%, upon crystallization.

9. The method of claim 1 , wherein the amorphous organic layer further comprises at least one material that does not undergo IQE alignment to the material of the crystalline organic layer as a result of the annealing.

10. The method of claim 9 , wherein the at least one material that undergoes IQE alignment and the at least one material that does not undergo IQE alignment are donors or acceptors relative to the material of the crystalline organic layer.

11. The method of claim 1 , further comprising depositing a buffer layer over the amorphous organic layer and the crystalline organic layer before annealing such that the buffer layer is also exposed to the annealing.

12. The method of claim 1 , wherein the amorphous organic layer and the crystalline organic layer are deposited using different deposition techniques.

13. The method of claim 12 , wherein the amorphous organic layer is deposited using a solution processing technique and the crystalline organic layer is deposited using a vacuum deposition technique.

14. A method of intermixing materials at an interface, comprising:

providing a film comprising an amorphous organic layer and a crystalline organic layer disposed over a substrate, wherein the amorphous organic layer contacts the crystalline organic layer at the interface; and

annealing the amorphous organic layer and the crystalline organic layer; wherein the amorphous organic layer comprises at least one material that undergoes IQE alignment to a material of the crystalline organic layer as a result of the annealing.

15. The method of claim 14 , wherein the annealing is chosen from solvent vapor annealing and thermal annealing.

16. The method of claim 14 , wherein providing a film comprising an amorphous organic layer and a crystalline organic layer disposed over a substrate comprises depositing an amorphous organic layer and a crystalline organic layer over the substrate, wherein the amorphous organic layer and the crystalline organic layer are deposited using different techniques.

17. The method of claim 16 , wherein the amorphous organic layer is deposited using a solution processing technique and the crystalline organic layer is deposited using a vacuum deposition technique.

18. The method of claim 14 , wherein the amorphous organic layer comprises a donor material or an acceptor material relative to a material of the crystalline organic layer.

19. The method of claim 14 , wherein the at least one material that undergoes IQE alignment is a donor or an acceptor relative to the material of the crystalline organic layer.

20. The method of claim 19 , wherein the at least one material that undergoes IQE alignment is a donor relative to the material of the crystalline organic layer, and the material of the crystalline organic layer comprises a fullerene or a derivative thereof.

21. The method of claim 14 , wherein the amorphous organic layer further comprises at least one material that does not undergo IQE alignment to the material of the crystalline organic layer as a result of the annealing.

22. The method of claim 21 , wherein the at least one material that undergoes IQE alignment and the at least one material that does not undergo IQE alignment are both donors or both acceptors relative to the material of the crystalline organic layer.

23. The method of claim 14 , wherein the film further comprises a buffer layer over the amorphous organic layer and the crystalline organic layer such that the buffer layer is also exposed to the annealing.

24. An organic photovoltaic device comprising:

two electrodes in superposed relation; and

a photoactive region positioned between the two electrodes, wherein the photoactive region comprises a donor layer and an acceptor layer forming a donor-acceptor heterojunction, wherein one of the donor layer and the acceptor layer is a crystalline layer and the other of the donor layer and the acceptor layer comprises at least one material that has undergone IQE alignment to a material of the crystalline layer.

25. The device of claim 24 , wherein the donor layer and the acceptor layer are annealed.

26. The device of claim 25 , wherein the annealing is chosen from solvent vapor annealing and thermal annealing.

27. The device of claim 24 , wherein the layer that comprises the at least one material that has undergone IQE alignment further comprises at least one material that has not undergone IQE alignment to the material of the crystalline layer.

28. The device of claim 24 , wherein the at least one material that has undergone IQE alignment comprises a squaraine or derivative thereof.

29. The device of claim 24 , wherein the material of the crystalline layer is a fullerene or derivative thereof.