IP Library › Granted Patent US 9,852,089
Granted Patent B2
US 9,852,089 · App. 14/977,813 · Granted Dec 26, 2017

Semiconductor device

Inventor: Hyuk Choong Kang (Seongnam-si, KR)
Assignee: SK hynix Inc.
G06F13/1694G06F13/4068
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Quick Facts
Patent No.
US 9,852,089
App. No.
14/977,813
Granted
Dec 26, 2017
Kind
B2
Abstract

A semiconductor device includes a memory device, a host, and an interface. The memory device includes various types of memory units configured to be mounted to one slot. The host stores memory characteristic information of the various types of memory units contained in the memory device, processes a signal for the memory units on the basis of the memory characteristic information, and transmits and receives the processed signal to and from the memory units. The interface allows the host to interface with the various types of memory units contained in the memory device.

Claims (15)

1. A semiconductor device comprising:

a memory device including various types of memory units configured to be installed in one slot;

a host configured to store memory characteristic information of the various types of memory units contained in the memory device, process a signal for the memory units on the basis of the memory characteristic information, and transmit and receive the processed signal to and from the memory units; and

an interface configured to allow the host to interface with the various types of memory units contained in the memory device,

wherein the host generates the memory characteristic information for each channel among a plurality of channels, generates an AC parameter on the basis of the memory characteristic information, and stores the AC parameter.

2. The semiconductor device according to claim 1 , wherein the memory device includes:

a master memory unit block configured to communicate with the host through the interface and include various types of master memory units; and

at least one slave memory unit block coupled to the master memory unit through a relay unit and configured to include various types of slave memory units.

3. The semiconductor device according to claim 2 , wherein the same type of memory units among the various types of master memory units and the various types of slave memory units are interconnected through the relay unit within one channel among the plurality of channels.

4. The semiconductor device according to claim 3 , wherein the information communicated between the memory device and the host includes memory type information of the memory units.

5. The semiconductor device according to claim 4 , wherein the interface operates on the basis of the memory type information.

6. The semiconductor device according to claim 3 , wherein the host transmits a memory search command to the memory device at a predetermined time interval, and acquires memory characteristic information of the memory units contained in the channel.

7. The semiconductor device according to claim 2 , wherein the various types of memory units include at least one of a Dynamic Random Access Memory (DRAM), a flash memory, a Spin-Torque Transfer Magnetic RAM (STTMRAM), a Phase Change RAM (PCRAM), and a resistive RAM (Re RAM).

8. The semiconductor device according to claim 1 , wherein the host is configured to process data, command, and address for the memory units on the basis of the AC parameter, and provide the processed data, command, and address to the memory units.

9. The semiconductor device according to claim 1 , wherein the interface includes a physical layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 22, 2015
From: KANG, HYUK CHOONG
To: SK HYNIX INC.
Reel/Frame 037347/0476 →
Priority Claims (1)
KR 10-2015-0108192 · Jul 30, 2015 · national
Continuity (1)
Related Publication 20170031848A1 · Feb 2, 2017