Silicon photoelectric multiplier with very low optical cross-talk and fast readout
The silicon-based photomultiplier device comprises a substrate ( 1 ), a first layer ( 2 ) of a first conductivity type, a second layer ( 3 ) of a second conductivity type formed on the first layer, wherein the first layer ( 2 ) and the second layer ( 3 ) form a p-n junction, wherein the first layer ( 2 ) and the second layer ( 3 ) are disposed on or above the substrate ( 1 ). A material layer ( 15 ) between the substrate ( 1 ) and the first layer ( 2 ) fulfills the function of a light absorber, thereby efficiently suppressing crosstalk between adjacent cells of the device. Material layer ( 15 ) may further serve as an electrode for readout of electrical signals from the device.
1. A silicon-based photoelectric multiplier device, comprising:
a substrate;
a first layer of a first conductivity type;
a plurality of photosensitive cells, wherein:
each photosensitive cell of the plurality of photosensitive cells comprises a second layer of a second conductivity type formed on a main upper surface of the first layer remote from the substrate,
the first layer and the second layer form a p-n junction, and
the first layer and the second layer are disposed on or above the substrate; and
a material layer disposed between a main upper surface of the substrate and a main lower surface of the first layer, wherein:
the material layer is made of a material different from a material of the substrate, and
the material of the material layer comprises one or more of a metal, a metal compound, or a metal alloy.
2. The silicon-based photoelectric multiplier device according to claim 1 , wherein the material of the material layer is chosen such that a reflectivity of light with a wavelength in a range of about 1000 nm incident on an interface between the first layer and the material layer is less than 25%.
3. The silicon-based photoelectric multiplier device according to claim 2 , wherein the substrate is one or more of a conductive, a semiconductor, or an insulating type.
4. The silicon-based photoelectric multiplier device according to claim 3 , further comprising:
a first electrode disposed above the first layer, a second electrode disposed below the first layer, and a third electrode disposed above the first layer.
5. The silicon-based photoelectric multiplier device according to claim 4 , wherein the third electrode is formed on the main upper surface of the first layer or on the main upper surface of the substrate.
6. The silicon-based photoelectric multiplier device according to claim 2 , further comprising:
a first electrode disposed above the first layer, a second electrode disposed below the first layer, and a third electrode disposed above the first layer.
7. The silicon-based photoelectric multiplier device according to claim 6 , wherein the third electrode is formed on the main upper surface of the first layer or on the main upper surface of the substrate.
8. The silicon-based photoelectric multiplier device according to claim 1 , wherein the substrate is one or more of a conductive, a semiconductor, or an insulating type.
9. The silicon-based photoelectric multiplier device according to claim 8 , further comprising:
a first electrode disposed above the first layer, a second electrode disposed below the first layer, and a third electrode disposed above the first layer.
10. The silicon-based photoelectric multiplier device according to claim 9 , wherein the third electrode is formed on the main upper surface of the first layer or on the main upper surface of the substrate.
11. The silicon-based photoelectric multiplier device according to claim 1 , further comprising:
a first electrode disposed above the first layer, a second electrode disposed below the first layer, and a third electrode disposed above the first layer.
12. The silicon-based photoelectric multiplier device according to claim 11 , wherein the third electrode is formed on the main upper surface of the first layer or on the main upper surface of the substrate.