Structure and method of semiconductor device structure with gate
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a gate stack over the semiconductor substrate. The semiconductor device structure includes spacers over opposite sidewalls of the gate stack. The spacers and the gate stack surround a recess over the gate stack. The semiconductor device structure includes a first insulating layer over the gate stack and an inner wall of the recess. The semiconductor device structure includes a second insulating layer over the first insulating layer. Materials of the first insulating layer and the second insulating layer are different, and a first thickness of the first insulating layer is less than a second thickness of the second insulating layer.
1. A semiconductor device structure, comprising:
a semiconductor substrate;
a gate stack over the semiconductor substrate, wherein the gate stack comprises a gate dielectric layer and a metal gate;
spacers over opposite sidewalls of the gate stack, wherein the spacers and the gate stack surround a recess over the gate stack;
a first insulating layer over the gate stack and an inner wall of the recess, wherein the first insulating layer is in direct contact with a top surface of the gate stack;
a second insulating layer over the first insulating layer, wherein materials of the first insulating layer and the second insulating layer are different, and a first thickness of the first insulating layer is less than a second thickness of the second insulating layer; and
a dielectric layer over the semiconductor substrate and surrounding the gate stack, the spacers, the first insulating layer, and the second insulating layer, wherein the dielectric layer and the first insulating layer are made of a same material.
2. The semiconductor device structure as claimed in claim 1 , wherein the first insulating layer conformally covers the top surface of the gate stack and the inner wall of the recess.
3. The semiconductor device structure as claimed in claim 1 , wherein the first insulating layer has a second recess in the first recess.
4. The semiconductor device structure as claimed in claim 3 , wherein the second recess is filled up with the second insulating layer, and the first insulating layer is in direct contact with the second insulating layer.
5. The semiconductor device structure as claimed in claim 4 , wherein a first top surface of the first insulating layer is substantially coplanar with a second top surface of the second insulating layer.
6. The semiconductor device structure as claimed in claim 1 , wherein a ratio of the second thickness to the first thickness ranges from about 8 to about 18.
7. The semiconductor device structure as claimed in claim 1 , wherein the first insulating layer and the dielectric layer are made of silicon oxide.
8. The semiconductor device structure as claimed in claim 1 , wherein the second insulating layer comprises silicon nitride or silicon carbide.
9. A semiconductor device structure, comprising:
a semiconductor substrate;
a gate stack over the semiconductor substrate, wherein the gate stack comprises a gate dielectric layer and a metal gate;
spacers over opposite sidewalls of the gate stack, wherein the spacers and the gate stack surround a recess over the gate stack;
a first insulating layer in the recess, wherein the first insulating layer is in direct contact with a top surface of the gate stack; and
a second insulating layer over the first insulating layer, wherein materials of the first insulating layer and the second insulating layer are different, the first insulating layer separates the second insulating layer from the gate stack and the spacers, and the first insulating layer surrounds the second insulating layer; and
a dielectric layer over the semiconductor substrate and surrounding the gate stack, the spacers, the first insulating layer, and the second insulating layer, wherein the dielectric layer and the first insulating layer are made of a same material.
10. The semiconductor device structure as claimed in claim 9 , wherein the first insulating layer and the dielectric layer are made of silicon oxide.
11. The semiconductor device structure as claimed in claim 9 , wherein the second insulating layer has a bottom surface and a sidewall, and the first insulating layer covers the bottom surface and the sidewall of the second insulating layer.
12. The semiconductor device structure as claimed in claim 11 , wherein the first insulating layer is in direct contact with the bottom surface and the sidewall of the second insulating layer.
13. The semiconductor device structure as claimed in claim 11 , wherein the first insulating layer conformally covers the bottom surface and the sidewall of the second insulating layer.
14. The semiconductor device structure as claimed in claim 9 , wherein a first top surface of the first insulating layer is substantially coplanar with a second top surface of the second insulating layer and a third top surface of the dielectric layer.
15. The semiconductor device structure as claimed in claim 9 , wherein a ratio of a first thickness of the second insulating layer to a second thickness of the first insulating layer ranges from about 8 to about 18.
16. A method for forming a semiconductor device structure, comprising:
forming two spacers over a semiconductor substrate;
forming a dielectric layer over the semiconductor substrate and surrounding the spacers;
forming a gate stack between the spacers, wherein the spacers and the gate stack surround a recess, and the gate stack comprises a gate dielectric layer;
forming a first insulating layer in the recess and over the gate stack and an inner wall of the recess by a non-plasma deposition process, wherein the first insulating layer is in direct contact with a top surface of the gate stack, and the dielectric layer and the first insulating layer are made of a same material; and
forming a second insulating layer in the recess and over the first insulating layer by a plasma deposition process, wherein materials of the first insulating layer and the second insulating layer are different, and a first thickness of the first insulating layer is less than a second thickness of the second insulating layer.
17. The method for forming a semiconductor device structure as claimed in claim 16 , wherein the formation of the first insulating layer and the second insulating layer comprises:
performing the non-plasma deposition process to form a first insulating material layer over the gate stack and the inner wall of the recess;
performing the plasma deposition process to form a second insulating material layer over the first insulating material layer; and
removing portions of the first insulating material layer and the second insulating material layer outside of the recess.
18. The method for forming a semiconductor device structure as claimed in claim 17 , wherein the non-plasma deposition process comprises a chemical vapor deposition process, and the first insulating layer and the dielectric layer are made of silicon oxide.
19. The method for forming a semiconductor device structure as claimed in claim 16 , wherein the plasma deposition process comprises a high-density plasma deposition process.
20. The method for forming a semiconductor device structure as claimed in claim 16 , wherein a top surface of the gate dielectric layer is between the semiconductor substrate and a bottom surface of the first insulating layer.