Switching device
A switching device includes first-third semiconductor layers, a gate insulating film, and a gate electrode. The first semiconductor layer is of a first conductivity type. The second semiconductor layer is of a second conductivity type and in contact with the first semiconductor layer. The third semiconductor layer is of the first conductivity type, in contact with the second semiconductor layer. The gate insulating film covers a surface of the second semiconductor layer in a range in which the second semiconductor layer separates the first semiconductor layer from the third semiconductor layer. The gate electrode faces the second semiconductor layer via the gate insulating film. The gate electrode includes a fourth semiconductor layer covering a surface of the gate insulating film; and a fifth semiconductor layer having a bandgap different from a bandgap of the fourth semiconductor layer and covering a surface of the fourth semiconductor layer.
1. A switching device comprising:
a first semiconductor layer of a first conductivity type;
a second semiconductor layer of a second conductivity type being in contact with the first semiconductor layer;
a third semiconductor layer of the first conductivity type being in contact with the second semiconductor layer and separated from the first semiconductor layer by the second semiconductor layer;
a gate insulating film covering a surface of the second semiconductor layer in a range in which the second semiconductor layer separates the first semiconductor layer from the third semiconductor layer; and
a gate electrode facing the second semiconductor layer via the gate insulating film,
wherein
the gate electrode comprises:
a fourth semiconductor layer covering a surface of the gate insulating film;
a fifth semiconductor layer having a bandgap different from a bandgap of the fourth semiconductor layer and covering a surface of the fourth semiconductor layer; and
a wiring layer constituted of a metal, the wiring layer being in contact with the fourth semiconductor layer and the fifth semiconductor layer.
2. The switching device of claim 1 , wherein
the first semiconductor layer and the third semiconductor layer are of an n-type,
the second semiconductor layer is of a p-type,
the bandgap of the fifth semiconductor layer is narrower than the bandgap of the fourth semiconductor layer,
the fifth semiconductor layer is of the n-type.
3. The switching device of claim 1 , wherein
the first semiconductor layer and the third semiconductor layer are of an n-type,
the second semiconductor layer is of a p-type,
the bandgap of the fifth semiconductor layer is narrower than the bandgap of the fourth semiconductor layer, and
the fifth semiconductor layer is of the p-type.