Semiconductor device and manufacturing method thereof
A semiconductor device includes a fin structure disposed over a substrate, a gate structure and a source. The fin structure includes an upper layer being exposed from an isolation insulating layer. The gate structure disposed over part of the upper layer of the fin structure. The source includes the upper layer of the fin structure not covered by the gate structure. The upper layer of the fin structure of the source is covered by a crystal semiconductor layer. The crystal semiconductor layer is covered by a silicide layer formed by Si and a first metal element. The silicide layer is covered by a first metal layer. A second metal layer made of the first metal element is disposed between the first metal layer and the isolation insulating layer.
1. A method of manufacturing a semiconductor device including a FinFET, the method comprising:
forming a first fin structure and a second fin structure over a substrate, the first and second fin structures extending in a first direction and protruding from an isolation insulating layer;
forming a gate structure over part of the first and second fin structures, the gate structure extending in a second direction perpendicular to the first direction;
forming sidewall spacers on both major side surfaces of each of the first and second fin structures not covered by the gate structure;
forming first metal layers on the sidewall spacers and second metal layers on the first metal layers, thereby filling a space between the first and second fin structures;
after forming the first and second metal layers, removing the sidewall spacers;
after removing the sidewall spacers, forming an amorphous layer in contact with the fin structure;
forming a recrystallized layer by partially recrystallizing the amorphous layer on the fin structure;
removing a remaining amorphous layer which is not recrystallized;
after removing the remaining amorphous layer, forming a third metal layer; and
forming silicide layers formed by a silicide reaction between the recrystallized layer and the first metal layers and the third metal layer.
2. The method of claim 1 , wherein the first metal layers include a metal material having a lower silicide formation temperature than a metal material of the second metal layers.
3. The method of claim 1 , wherein the first metal layers include at least one of Ni, Ti and Ta, and the second metal layers include W.
4. The method of claim 1 , wherein the third metal layer is made of a same material as the first metal layers.
5. The method of claim 1 , wherein the third metal layer is made of a same material as the second metal layers.
6. The method of claim 1 , further comprising, after forming the third metal layer and before forming the silicide layers, forming a fourth metal layer on the third metal layer.
7. The method of claim 6 , wherein the first metal layers include a metal material having a lower silicide formation temperature than a metal material of the second metal layers.
8. The method of claim 7 , wherein:
the first metal layers and the third metal layer are made of a same metal material, and
the second metal layers and the fourth metal layer are made of a same metal material.
9. The method of claim 8 , wherein:
the first metal layers and the third metal layer are made of at least one of Ni, Ti and Ta, and,
the second metal layers and the fourth metal layer are made of W.
10. The method of claim 1 , wherein entire top and side faces of an upper layer of each of the first and second fin structures not covered by the gate structure are covered by the recrystallized layer.
11. The method of claim 1 , wherein the amorphous layer includes amorphous silicon.
12. The method of claim 11 , wherein the amorphous silicon is doped with impurities at an amount of 2×10 20 cm −3 to 1×10 21 cm −3 .
13. The method of claim 1 , wherein in the removing the remaining amorphous layer, the remaining amorphous layer is removed by wet etching.
14. The method of claim 1 , wherein the forming the recrystallized layer is performed at a temperature of 500° C. to 650° C.
15. The method of claim 1 , wherein the amorphous layer includes amorphous silicon doped with impurities at an amount of 2×10 20 cm −3 to 1×10 21 cm −3 .
16. A method of manufacturing a semiconductor device including a FinFET, the method comprising:
forming a fin structure over a substrate, the fin structure extending in a first direction and protruding from an isolation insulating layer;
forming a gate structure over part of the fin structure, the gate structure extending in a second direction perpendicular to the first direction;
forming sidewall spacers on opposing major side surfaces of the fin structure not covered by the gate structure;
forming first metal layers on the sidewall spacers and second metal layers on the first metal layers;
after forming the first and second metal layers, removing the sidewall spacers;
after removing the sidewall spacers, forming an amorphous layer in contact with the fin structure;
forming a recrystallized layer by partially recrystallizing the amorphous layer on the fin structure;
removing a remaining amorphous layer which is not recrystallized;
after removing the remaining amorphous layer, forming a third metal layer; and
forming silicide layers formed by a silicide reaction between the recrystallized layer and the first metal layers and the third metal layer.
17. The method of claim 16 , wherein the first metal layers include at least one of Ni, Ti and Ta, and the second metal layers include W.
18. The method of claim 16 , wherein the third metal layer is made of a same material either of the first metal layers or the second metal layers.
19. The method of claim 16 , further comprising, after forming the third metal layer and before forming the silicide layers, forming a fourth metal layer on the third metal layer.
20. A method of manufacturing a semiconductor device including a FinFET, the method comprising:
forming fin structures over a substrate, the fin structures extending in a first direction and protruding from an isolation insulating layer;
forming a gate structure over part of the fin structures, the gate structure extending in a second direction perpendicular to the first direction;
forming sidewall spacers on opposing major side surfaces of each of the fin structures not covered by the gate structure;
forming first metal layers on the sidewall spacers and second metal layers on the first metal layers, thereby filling one or more spaces between the fin structures;
after forming the first and second metal layers, removing the sidewall spacers;
after removing the sidewall spacers, forming an amorphous layer in contact with the fin structures;
forming a recrystallized layer by partially recrystallizing the amorphous layer on the fin structures;
removing a remaining amorphous layer which is not recrystallized;
after removing the remaining amorphous layer, forming a third metal layer; and
forming silicide layers formed by a silicide reaction between the recrystallized layer and the third metal layers and at least a part of the first metal layer.