IP Library › Granted Patent US 9,881,952
Granted Patent B2
US 9,881,952 · App. 15/146,110 · Granted Jan 30, 2018

Level shifter circuit and method

Inventors: Yuichiro Yamashita (Hsinchu, TW); Po-Sheng Chou (Baoshan Township, TW)
Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
H01L27/14609H01L27/1464H01L27/1469H01L27/14605H01L27/14612H01L27/14634H01L27/14636H01L27/14689H01L28/40H01L27/14627
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Quick Facts
Patent No.
US 9,881,952
App. No.
15/146,110
Granted
Jan 30, 2018
Kind
B2
Abstract

A circuit includes a photodiode electrically coupled to a first node, the first node configured to be charged by a first power supply voltage. A second node is configured to be charged by a second power supply voltage lower than the first power supply voltage, a source follower transistor is electrically coupled between the second node and a column line, and a level shifter is electrically coupled between the first node and the second node.

Claims (58)

1. A circuit comprising:

a photodiode electrically coupled to a first node, the first node configured to be charged by a first power supply voltage;

a second node, the second node configured to be charged by a second power supply voltage lower than the first power supply voltage;

a source follower transistor electrically coupled between the second node and a column line; and

a level shifter electrically coupled between the first node and the second node.

2. The circuit of claim 1 , wherein the level shifter comprises a capacitor.

3. The circuit of claim 2 , wherein a signal level at the second node is based on

a number of signal electrons at the photodiode,

a level shifter capacitance of the capacitor,

a first node capacitance of the first node, and

a second node capacitance of the second node.

4. The circuit of claim 1 , wherein

the photodiode is electrically coupled to the first node by a transfer transistor, the transfer transistor comprising a first gate having a first oxide thickness, and

the source follower transistor comprises a second gate having a second oxide thickness less than the first oxide thickness.

5. The circuit of claim 1 , wherein the circuit is one circuit of a plurality of circuits of a pixel array, each circuit of the plurality of circuits being electrically coupled to the column line.

6. The circuit of claim 5 , wherein

the column line is one column line of a plurality of column lines of the pixel array, and

the plurality of circuits is one plurality of circuits of multiple pluralities of circuits, each circuit of a given plurality of circuits being electrically coupled to a column line of the plurality of column lines corresponding to the given plurality of circuits.

7. A circuit comprising:

a first node on a first substrate, the first node configured to be charged by a first power supply voltage;

a second node on a second substrate, the second node configured to be charged by a second power supply voltage lower than the first power supply voltage;

a photodiode on the first substrate and electrically coupled to the first node;

a source follower transistor on the second substrate and electrically coupled between the second node and a column line; and

a level shifter electrically coupled between the first node and the second node.

8. The circuit of claim 7 , wherein

the first substrate is bonded to the second substrate at a bonding boundary, and

the level shifter comprises a capacitor, the capacitor comprising:

a first electrode on the first substrate at the bonding boundary, and

a second electrode on the second substrate at the bonding boundary.

9. The circuit of claim 8 , wherein a signal level at the second node is based on

a number of signal electrons at the photodiode,

a level shifter capacitance of the capacitor,

a first node capacitance of the first node, and

a second node capacitance of the second node.

10. The circuit of claim 7 , wherein

the circuit is one circuit of a plurality of circuits of a pixel array,

each circuit of the plurality of circuits comprises a photodiode on the first substrate, and

each circuit of the plurality of circuits is electrically coupled to the column line.

11. A method comprising:

charging a photodiode and a first node to a first power supply voltage;

charging a second node to have a second node voltage equal to a second power supply voltage, the second power supply voltage being lower than the first power supply voltage, the second node being electrically coupled to the first node by a level shifter;

electrically connecting the photodiode to the first node; and

outputting a voltage with a source follower transistor electrically coupled to a column line, the voltage being based on the second node voltage and indicative of exposure of the photodiode to light.

12. The method of claim 11 , wherein the level shifter comprises a capacitor.

13. The method of claim 12 , wherein outputting the voltage comprises outputting the voltage based on

a number of signal electrons at the photodiode,

a level shifter capacitance of the capacitor,

a first node capacitance of the first node, and

a second node capacitance of the second node.

14. The method of claim 11 , wherein charging the photodiode and the first node to the first power supply voltage comprises using a signal having the first power supply voltage to control a first transistor electrically coupled to the first node.

15. The method of claim 14 , wherein

the first transistor comprises a first gate having a first oxide thickness, and

outputting the voltage comprises outputting the voltage with the source follower transistor comprising a second gate having a second gate thickness less than the first gate thickness.

16. The method of claim 11 , wherein outputting the voltage with the source follower transistor comprises using a signal having the second power supply voltage to control the source follower transistor.

17. The method of claim 11 , wherein outputting the voltage with the source follower transistor comprises outputting the voltage having a value based on a photodiode voltage reduced by the level shifter.

18. The method of claim 17 , wherein the photodiode voltage having the first power supply voltage indicates that the photodiode has not been exposed to light.

19. The method of claim 17 , wherein the photodiode voltage having a value below the first power supply voltage indicates that the photodiode has been exposed to light.

20. The method of claim 11 , further comprising outputting another voltage with another source follower transistor electrically coupled to the column line, the another voltage being indicative of exposure of another photodiode to light.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 4, 2016
From: YAMASHITA, YUICHIRO; CHOU, PO-SHENG
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 038454/0672 →
Continuity (2)
Continuation 14295047 · Jun 3, 2014
Related Publication 20160247845A1 · Aug 25, 2016