Nanostructured layers of thermoelectric materials
This disclosure provides systems, methods, and apparatus related to thermoelectric materials. In one aspect, a method includes providing a plurality of nanostructures. The plurality of nanostructures comprise a thermoelectric material, with each nanostructure of the plurality of nanostructures having first ligands disposed on a surface of the nanostructure. The plurality of nanostructures is mixed with a solution containing second ligands and a ligand exchange process occurs in which the first ligands disposed on the plurality of nanostructures are replaced with the second ligands. The plurality of nanostructures is deposited on a substrate to form a layer. The layer is thermally annealed.
1. A method comprising:
(a) providing a plurality of nanostructures, the plurality of nanostructures comprising a thermoelectric material, each nanostructure of the plurality of nanostructures having first ligands disposed on a surface of the nanostructure;
(b) mixing the plurality of nanostructures with a solution containing second ligands and a ligand exchange process occurring in which the first ligands disposed on the plurality of nanostructures are replaced with the second ligands;
(c) depositing the plurality of nanostructures on a substrate to form a layer; and
(d) thermally annealing the layer.
2. The method of claim 1 , wherein the plurality of nanostructures comprises nanostructures selected from a group consisting of nanorods, nanowires, nanoparticles, and quantum dots.
3. The method of claim 1 , wherein the first ligands comprise oleylamine ligands.
4. The method of claim 1 , wherein the plurality of nanostructures comprises Cu 2 Se or Cu 2-x Se.
5. The method of claim 1 , wherein operation (c) is performed with a solution processing technique.
6. The method of claim 5 , wherein the solution processing technique is selected from a group consisting of spin coating, dip coating, spray coating, doctor blade, and inkjet printing.
7. The method of claim 1 , wherein the substrate comprises a silicon substrate or a glass substrate.
8. The method of claim 1 , wherein the second ligands comprise ethanedithiol ligands.
9. The method of claim 1 , wherein the first ligands have a longer chain length than the second ligands.
10. The method of claim 1 , wherein during the thermal annealing all of the second ligands are removed from the surface of each nanostructure of the plurality of nanostructures.
11. The method of claim 1 , wherein during the thermal annealing at least some of the second ligands are removed from the surface of each nanostructure of the plurality of nanostructures.
12. The method of claim 1 , wherein the thermal annealing is performed at a temperature below about 500° C.
13. The method of claim 1 , wherein the thermal annealing is performed for about 15 minutes to 1 hour.
14. The method of claim 1 , wherein the thermal annealing is performed in an atmosphere comprising a gas selected from a group consisting of nitrogen, argon, hydrogen, air, and mixtures thereof.
15. The method of claim 1 , wherein after the thermal annealing, a thermoelectric material surface of a first nanostructure is in contact with a thermoelectric material surface of a second nanostructure.
16. The method of claim 1 , wherein after the thermal annealing, the layer has a thermoelectric figure of merit (ZT) of at least about 0.3.
17. A method comprising:
(a) providing a plurality of nanostructures, the plurality of nanostructures comprising a thermoelectric material, each nanostructure of the plurality of nanostructures having first ligands disposed on a surface of the nanostructure;
(b) depositing the plurality of nanostructures on a substrate to form a layer;
(c) contacting the layer with a solution containing second ligands and a ligand exchange process occurring in which the first ligands disposed on the plurality of nanostructures are replaced with the second ligands; and
(d) thermally annealing the layer.
18. The method of claim 17 , wherein the plurality of nanostructures comprises Cu 2 Se or Cu 2-x Se, wherein the first ligands comprise oleylamine ligands, and wherein the second ligands comprise ethanedithiol ligands.
19. The method of claim 17 , wherein after the thermal annealing, the layer has a thermoelectric figure of merit (ZT) of at least about 0.3.