Method for manufacturing a solar cell with a surface-passivating dielectric double layer, and corresponding solar cell
View Patent ↗A solar cell with a dielectric double layer and also a method for the manufacture thereof are described. A first dielectric layer ( 3 ), which contains aluminum oxide or consists of aluminum oxide, and a second, hydrogen-containing dielectric layer ( 5 ) are produced by means of atomic layer deposition, allowing very good passivation of the surface of solar cells to be achieved.
1. Method for manufacturing a silicon solar cell, including the following steps:
providing a silicon substrate;
depositing a first dielectric layer having a thickness of less than 50 nm on a surface of the silicon substrate by means of atomic layer deposition, wherein the first dielectric layer comprises aluminium oxide; and
depositing a second dielectric layer directly on a surface of the first dielectric layer, materials of the first dielectric layer and the second dielectric layer differing and hydrogen being embedded into the second dielectric layer.
2. The method according to claim 1 , wherein, for the depositing the first dielectric layer, the silicon substrate is firstly flushed with an aluminium-containing compound comprising at least one of Al(CH 3 ) 3 , AlCl 3 , Al(CH 3 ) 2 Cl and (CH 3 ) 2 (C 2 H 5 )N:AlH 3 , so that an aluminium-containing layer is deposited on the surface of the silicon substrate, and wherein the aluminium-containing layer is subsequently oxidized to higher valency in an oxygen-containing atmosphere.
3. The method according to claim 1 , wherein the second dielectric layer comprises a material selected from the group consisting of silicon nitride, silicon oxide and silicon carbide.
4. The method according to claim 1 , wherein the second dielectric layer is manufactured by means of a PECVD method.
5. The method according to claim 1 , wherein the second dielectric layer is deposited in such a way that the second dielectric layer has a hydrogen content of at least 1 at. %.
6. The method according to claim 1 , wherein a high-temperature step is carried out at temperatures above 600° C. after the depositing of the second dielectric layer.
7. The method according to claim 1 , wherein no further dielectric layers are deposited on the surface of the silicon substrate on which the first dielectric layer and the second dielectric layer are deposited.
8. The method according to claim 1 , wherein the first dielectric layer is deposited with a thickness of less than 30 nm.
9. The method according to claim 1 , wherein, for the depositing the first dielectric layer, the silicon substrate is firstly flushed with an aluminium-containing compound comprising at least one of Al(CH 3 ) 3 , AlCl 3 , Al(CH 3 ) 2 Cl and (CH 3 ) 2 (C 2 H 5 )N:AlH 3 , so that an aluminium-containing layer is deposited on the surface of the silicon substrate, and wherein the aluminium-containing layer is subsequently oxidized to higher valency in an oxygen-containing atmosphere; and
wherein a high-temperature step is carried out at temperatures above 600° C. after the depositing of the second dielectric layer.
10. The method according to claim 1 , wherein the second dielectric layer comprises a material selected from the group consisting of silicon nitride, silicon oxide and silicon carbide;
wherein the second dielectric layer is manufactured by means of a PECVD method;
wherein the second dielectric layer is deposited in such a way that the second dielectric layer has a hydrogen content of at least 1 at. %; and
wherein the second dielectric layer is deposited at a thickness of more than 50 nm.
11. The method according to claim 1 , wherein, for the depositing the first dielectric layer, the silicon substrate is firstly flushed with an aluminium-containing compound comprising at least one of Al(CH 3 ) 3 , AlCl 3 , Al(CH 3 ) 2 Cl and (CH 3 ) 2 (C 2 H 5 )N:AlH 3 , so that an aluminium-containing layer is deposited on the surface of the silicon substrate, and wherein the aluminium-containing layer is subsequently oxidized to higher valency in an oxygen-containing atmosphere;
wherein the second dielectric layer comprises a material selected from the group comprising of silicon nitride, silicon oxide and silicon carbide;
wherein the second dielectric layer is manufactured by means of a PECVD method;
wherein the second dielectric layer is deposited in such a way that the second dielectric layer has a hydrogen content of at least 1 at. %;
wherein a high-temperature step is carried out at temperatures above 600° C. after the depositing of the second dielectric layer; and
wherein the second dielectric layer is deposited at a thickness of more than 50 nm.
12. A solar cell comprising:
a silicon substrate;
a first dielectric layer comprising aluminium oxide on a surface of the silicon substrate; and
a second dielectric layer directly on a surface of the first dielectric layer, materials of the first dielectric layer and the second dielectric layer differing and hydrogen being embedded into the second dielectric layer;
wherein the first dielectric layer has a thickness of less than 50 nm and is interposed between the surface of the silicon substrate and the second dielectric layer.
13. The solar cell according to claim 12 , wherein the second dielectric layer comprises a material selected from the group consisting of silicon nitride, silicon oxide and silicon carbide.
14. The solar cell according to claim 12 , wherein the first dielectric layer has a thickness of less than 30 nm.
15. The solar cell according to claim 12 , wherein the first dielectric layer is deposited by means of atomic layer deposition, so that the first dielectric layer is substantially atomically tight;
wherein the second dielectric layer comprises a material selected from the group consisting of silicon nitride, silicon oxide and silicon carbide;
wherein the second dielectric layer has a thickness of more than 50 nm; and
wherein the first dielectric layer has a thickness of less than 50 nm.
16. A solar cell comprising:
a silicon substrate; and
a dielectric double layer consisting of
a first dielectric layer comprising aluminum oxide on a surface of the silicon substrate, and
a second dielectric layer directly on a surface of the first dielectric layer, materials of the first dielectric layer and second dielectric layer differing and hydrogen being embedded in the second dielectric layer.