Metallic nanomesh
A transparent flexible nanomesh having at least one conductive element and sheet resistance less than 300Ω/□ when stretched to a strain of 200% in at least one direction. The nanomesh is formed by depositing a sacrificial film, depositing, etching, and oxidizing a first metal layer on the film, etching the sacrificial film, depositing a second metal layer, and removing the first metal layer to form a nanomesh on the substrate.
1. A metallic nanomesh, comprising:
a flexible sheet of metallic nanowires comprising palladium (Pd) and at least one conductive elements selected from the group consisting of aluminum (Al), copper (Cu), gold (Au), silver (Ag), platinum (Pt), and the alloys and combinations thereof, wherein the sheet of metallic nanowires comprises randomly woven metallic serpentines;
wherein the sheet of metallic nanowires is configured to stretch to 200% in at least one dimension at a sheet resistance less than 30 Ω/□; and
wherein the sheet of nanowires comprises a transmittance of at least about 40% in the spectrum between about 200 nm and about 1500 nm.
2. The metallic nanomesh of claim 1 , wherein each nanowire of the sheet of nanowires comprises a thickness between about 10 nm and about 500 nm.
3. The metallic nanomesh of claim 1 , wherein each nanowire of the sheet of nanowires comprises a line width between about 20 nm and about 200 nm.
4. The metallic nanomesh of claim 1 , wherein the sheet of nanowires comprises a mesh size between about 0.1 μm and about 10 μm.
5. The metallic nanomesh of claim 1 , further comprising a strain of at least 200% in at least one direction at a sheet resistance less than 10 Ω/□.
6. A device, comprising:
a substrate comprising PDMS or a metal; and
a flexible metallic nanomesh sheet disposed on the substrate and comprising palladium (Pd), wherein the sheet of metallic nanowires comprises randomly woven metallic serpentines, and wherein the sheet of metallic nanowires is configured to stretch to 200% in at least one dimension at a sheet resistance less than 30 Ω/□.
7. The device of claim 6 , wherein the nanomesh sheet further comprises at least one additional element selected from the group consisting of: aluminum (Al), copper (Cu), silver (Ag), platinum (Pt), gold (Au) and the alloys and combinations thereof.
8. The device of claim 6 , wherein the nanomesh sheet comprises a plurality of nanowires.
9. The device of claim 8 , wherein each nanowire of the plurality of nanowires comprises a thickness between about 10 nm and about 500 nm and a line width between about 20 nm and about 200 nm.
10. The device of claim 8 , wherein the nanomesh comprises a mesh size between about 0.1 μm and about 10μm.
11. The device of claim 10 , wherein the mesh size: line width ratio is at least 8.
12. The device of claim 8 , wherein the nanomesh comprises a transmittance of at least about 40% in the spectrum between about 200 nm and about 1500 nm.