Electrode terminal, semiconductor device for electrical power, and method for manufacturing semiconductor device for electrical power

Inventors: Junji Fujino (Tokyo, JP); Yutaka Yoneda (Tokyo, JP); Shohei Ogawa (Tokyo, JP); Soichi Sakamoto (Tokyo, JP); Mikio Ishihara (Tokyo, JP); Miho Nagai (Tokyo, JP)

Assignee: MITSUBISHI ELECTRIC COOPERATION

H01L24/45 H01L23/48 H01L23/49537 H01L24/36 H01L24/40 H01L24/48 H01L24/72 H01L24/81 H01L25/07 H01L25/162 H01L25/18 H01L2224/40095 H01L2224/40137 H01L2224/40139 H01L2224/45014 H01L2224/45124 H01L2224/4824 H01L2224/48472 H01L2224/73221 H01L2224/73265 H01L2224/85205 H01L2224/85214 H01L2224/85232 H01L2924/1033 H01L2924/10254 H01L2924/10272 H01L2924/1203 H01L2924/13055 H01L2924/13091 H01L2924/1579 H01L2924/181

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Quick Facts

Patent No.: US 9,899,345
App. No.: 15/027,258
Granted: Feb 20, 2018
Kind: B2

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Abstract

An electrode terminal includes: a first drawn-out part to be bonded to a main electrode; and a second drawn-out part that is formed of a plate member in a continuous fashion from one end portion to be positioned opposite to the main electrode with a gap therebetween until another end portion to be connected to an external circuit, so that a portion in the first drawn-out part that is adjacent to a portion therein to be bonded to the main electrode, is bonded to an opposing surface to the main electrode in said one end portion; wherein the first drawn-out part is formed so that the portion to be bonded to the main electrode is away from the opposing surface; and wherein an opening portion corresponding to the main electrode is formed in the second drawn-out part.

Claims (48)

1. An electrode terminal for connecting a main electrode of a semiconductor element for electrical power with an external circuit, comprising:

a first drawn-out part bonded to the main electrode; and

a second drawn-out part that is formed of a plate member in a continuous fashion from one end portion positioned opposite to the main electrode with a gap therebetween until another end portion connected to the external circuit, so that a portion in the first drawn-out part that is adjacent to a portion therein bonded to the main electrode, is bonded to a widthwise center of a surface of the second drawn-out part opposing the main electrode in said one end portion;

wherein the first drawn-out part is formed so that the portion bonded to the main electrode is spaced apart from the opposing surface of the second drawn-out part in plan view; and wherein an opening portion or a cutout portion corresponding to portions of the first drawn-out part bonded to the main electrode is formed in the second drawn-out part; and

wherein the first drawn-out part is bonded to the second drawn-out part in a state in which a portion of the first drawn-out part is bent so as to be away from the second drawn-out part toward the semiconductor element for electrical power, and strides across the opening portion or the cutout portion.

2. The electrode terminal according to claim 1 , wherein the second drawn-out part is formed of an insulation circuit board.

3. The electrode terminal according to claim 2 , wherein the insulation circuit board is formed from a glass epoxy board.

4. The electrode terminal according to claim 1 , wherein a member that forms the first drawn-out part has a thickness thinner than that of a member that forms the second drawn-out part.

5. The electrode terminal according to claim 1 , wherein a member that forms the first drawn-out part has an elastic coefficient smaller than that of a member that forms the second drawn-out part.

6. The electrode terminal according to claim 1 , wherein the first drawn-out part is formed of an aluminum ribbon.

7. The electrode terminal according to claim 1 , wherein the first drawn-out part is formed of an aluminum wire.

8. The electrode terminal according to claim 1 , wherein the first drawn-out part is formed of a clad ribbon in which two or more types of metals are laminated.

9. A semiconductor device for electrical power comprising:

a circuit board;

a semiconductor element for electrical power bonded onto the circuit board; and

the electrode terminal according to claim 1 , being in a state where a main electrode of the semiconductor element for electrical power and the first drawn-out part are bonded together between their base materials.

10. The semiconductor device for electrical power according to claim 9 , wherein the semiconductor element for electrical power is formed of a wide bandgap semiconductor material.

11. The semiconductor device for electrical power according to claim 10 , wherein the wide bandgap semiconductor material is silicon carbide, a gallium nitride family material or diamond.

12. A semiconductor device for electrical power comprising:

a circuit board;

a semiconductor element for electrical power bonded onto the circuit board; and

the electrode terminal according to claim 8 , being in a state where a main electrode of the semiconductor element for electrical power and the first drawn-out part are bonded together between their base materials.

13. The semiconductor device for electrical power according to claim 12 , wherein the semiconductor element for electrical power is formed of a wide bandgap semiconductor material.

14. The semiconductor device for electrical power according to claim 13 , wherein the wide bandgap semiconductor material is silicon carbide, a gallium nitride family material or diamond.

15. A method of manufacturing the semiconductor device for electrical power according to claim 9 , comprising: