IP Library › Granted Patent US 9,922,771
Granted Patent B2
US 9,922,771 · App. 15/046,867 · Granted Mar 20, 2018

Electrolytic capacitor and method for manufacturing same

Inventor: Ryo Morioka (Kyoto, JP)
Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
H01G9/028H01G9/0032H01G9/0036H01G9/0425H01G9/07H01G9/15
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Quick Facts
Patent No.
US 9,922,771
App. No.
15/046,867
Granted
Mar 20, 2018
Kind
B2
Abstract

An electrolytic capacitor includes an anode, a dielectric layer formed on the anode, and an organic semiconductor layer covering at least a part of the dielectric layer. The organic semiconductor layer contains an organic semiconductor compound having a number average molecular weight of greater than or equal to 100 and less than or equal to 10,000 and a π electron cloud. In the organic semiconductor compound, a carrier moves between molecules of the organic semiconductor compound through the π electron cloud.

Claims (51)

1. An electrolytic capacitor comprising:

an anode;

a dielectric layer formed on the anode;

a conductive polymer layer formed on the dielectric layer; and

an organic semiconductor layer covering at least a part of the dielectric layer, wherein:

the organic semiconductor layer contains an organic semiconductor compound having a number average molecular weight in a range from 100 to 10,000, inclusive, and a π electron cloud,

in the organic semiconductor compound, a carrier moves between molecules of the organic semiconductor compound through the π electron cloud, and

the dielectric layer includes a first portion which is not covered with the conductive polymer layer but is covered with the organic semiconductor layer, and a second portion which is not covered with the organic semiconductor layer but is covered with the conductive polymer layer.

2. The electrolytic capacitor according to claim 1 ,

wherein the conductive polymer layer covers at least a part of the organic semiconductor layer.

3. The electrolytic capacitor according to claim 2 , wherein a void is provided so as to be surrounded by the organic semiconductor layer and the conductive polymer layer.

4. The electrolytic capacitor according to claim 1 , wherein the organic semiconductor layer contains a dopant.

5. The electrolytic capacitor according to claim 4 , wherein the dopant is at least one selected from the group consisting of electron donating molecules and electron accepting molecules.

6. The electrolytic capacitor according to claim 1 , wherein the organic semiconductor compound is soluble in a solvent having a boiling point of lower than or equal to 100° C.

7. A method for manufacturing an electrolytic capacitor, comprising:

preparing an anode including a dielectric layer;

forming a conductive polymer layer on the dielectric layer; and

forming an organic semiconductor layer by applying a solution, in which an organic semiconductor compound having a number average molecular weight in a range from 100 to 10,000, inclusive, and a π electron cloud is dissolved, onto the surface of the dielectric layer so that the dielectric layer includes a first portion which is not covered with the conductive polymer layer but is covered with the organic semiconductor layer, and a second portion which is not covered with the organic semiconductor layer but is covered with the conductive polymer layer.

8. A method for manufacturing an electrolytic capacitor, comprising:

preparing an anode including a dielectric layer;

forming a conductive polymer layer on the dielectric layer;

applying a solution, in which a precursor of an organic semiconductor compound having a number average molecular weight in a range from 100 to 10,000, inclusive, and a π electron cloud is dissolved, onto a surface of the dielectric layer; and

generating the organic semiconductor compound from the precursor so as to form an organic semiconductor layer so that the dielectric layer includes a first portion which is not covered with the conductive polymer layer but is covered with the organic semiconductor layer, and a second portion which is not covered with the organic semiconductor layer but is covered with the conductive polymer layer.

9. An electrolytic capacitor comprising:

an anode;

a dielectric layer formed on the anode;

an organic semiconductor layer covering at least a part of the dielectric layer, wherein:

the organic semiconductor layer contains an organic semiconductor compound having a number average molecular weight in a range from 100 to 10,000, inclusive, and a π electron cloud,

in the organic semiconductor compound, a carrier moves between molecules of the organic semiconductor compound through the π electron cloud, and

the organic semiconductor compound includes at least one compound selected from the group consisting of a polyacene having a structure in which a plurality of benzene rings are linearly condensed as denoted by following chemical formula (1) and a derivative thereof, a compound having a structure in which a plurality of benzene rings are non-linearly condensed and a derivative thereof, a thienoacene, which is a thiophene-containing condensed polycyclic aromatic compound as denoted by following chemical formulas (3) to (5), and a derivative thereof,

wherein in the chemical formula (1), n is 1, 2, 3, or 4,

wherein in the chemical formula (3), X is S, Se, or Te,

wherein in the chemical formula (4), X is S or Se, and R is an alkyl group or a phenyl group, and

wherein in the chemical formula (5), X is S or Se.

10. The electrolytic capacitor according to claim 9 , wherein the organic semiconductor layer contains a dopant.

11. The electrolytic capacitor according to claim 10 , wherein the dopant is at least one selected from the group consisting of electron donating molecules and electron accepting molecules.

12. The electrolytic capacitor according to claim 9 , wherein the organic semiconductor compound is soluble in a solvent having a boiling point of lower than or equal to 100° C.

13. An electrolytic capacitor comprising:

an anode;

a dielectric layer formed on the anode;

a conductive polymer layer formed on the dielectric layer; and

an organic semiconductor layer covering at least a part of the dielectric layer, wherein:

the organic semiconductor layer contains an organic semiconductor compound having a number average molecular weight in a range from 100 to 10,000, inclusive, and a π electron cloud,

in the organic semiconductor compound, a carrier moves between molecules of the organic semiconductor compound through the it electron cloud, and

a thickness of the organic semiconductor layer is smaller than a thickness of the conductive polymer layer.

14. The electrolytic capacitor according to claim 13 , wherein:

the thickness of the organic semiconductor layer is equal to or less than 1 μm, and

the thickness of the conductive polymer layer is more than 1 μm and equal to or less than 50 μm.

15. The electrolytic capacitor according to claim 13 , wherein the organic semiconductor layer contains a dopant.

16. The electrolytic capacitor according to claim 15 , wherein the dopant is at least one selected from the group consisting of electron donating molecules and electron accepting molecules.

17. The electrolytic capacitor according to claim 13 , wherein the organic semiconductor compound is soluble in a solvent having a boiling point of lower than or equal to 100° C.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 29, 2016
From: MORIOKA, RYO
To: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
Reel/Frame 037856/0274 →
Priority Claims (1)
JP 2013-179891 · Aug 30, 2013 · national
Continuity (2)
Continuation PCTJP2014004097 · Aug 6, 2014
Related Publication 20160163465A1 · Jun 9, 2016