Electronic device including a tunneling layer

1. An electronic device comprising:

a semiconductor layer;

a tunneling layer including a two-dimensional (2D) material directly contacting a certain region of the semiconductor layer; and

a metal layer formed on the tunneling layer and in direct contact with the tunneling layer;

the semiconductor layer having a doping density that is 10 19 cm −3 or less only in the certain region.

2. The electronic device of claim 1 , wherein the tunneling layer includes the 2D material configured to pass electrons therethrough.

3. The electronic device of claim 1 , wherein the tunneling layer includes a 2D laminated transition metal chalcogenide nanosheet.

4. The electronic device of claim 1 , wherein the tunneling layer comprises at least one layer of a plate-shaped structure material including a combination of at least one of titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), molybdenum (Mo), tungsten (W), technetium (Tc), rhenium (Re), cobalt (Co), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), and platinum (Pt), and at least one of sulfur (S), selenium (Se), and tellurium (Te).

5. The electronic device of claim 1 , wherein the tunneling layer comprises at least one layer of a plate-shaped structure material including a hexagonal boron nitride (h-BN).

6. The electronic device of claim 1 , wherein the tunneling layer comprises a dopant capable of changing a Fermi level of a plate-shaped structure material.

7. The electronic device of claim 1 , wherein the semiconductor layer comprises a semiconductor substrate.

8. The electronic device of claim 1 , wherein the semiconductor layer comprises at least one of silicon, germanium, silicon-germanium, II-VI group semiconductors, and III-V group semiconductors.