IP Library › Granted Patent US 9,941,346
Granted Patent B2
US 9,941,346 · App. 15/421,611 · Granted Apr 10, 2018

Display device and semiconductor device

Inventor: Mizuki Sato (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L27/3276H01L27/3258H01L27/3262H01L27/3265
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Quick Facts
Patent No.
US 9,941,346
App. No.
15/421,611
Granted
Apr 10, 2018
Kind
B2
Abstract

An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.

Claims (112)

1. A display device comprising a pixel comprising:

a first transistor over a film;

a second transistor over the film, the second transistor electrically connected to the first transistor;

a first wiring over the film, the first wiring electrically connected to a source region and a drain region of the first transistor;

a second wiring over the film, the second wiring electrically connected to a source region and a drain region of the second transistor; and

an electroluminescent element over the film, the electroluminescent element electrically connected to the source region and the drain region of the first transistor,

wherein a semiconductor layer including a channel formation region of the first transistor includes a curved portion in a top view of the semiconductor layer,

wherein the first wiring is configured to transmit a current that flows into the electroluminescent element via the first transistor,

wherein the first wiring and the channel formation region of the first transistor overlap each other,

wherein the second wiring and a part of the first transistor overlap each other,

wherein the part is one of the source region and the drain region in the semiconductor layer of the first transistor,

wherein the channel formation region of the first transistor includes a region capable of flowing a carrier in a direction,

wherein a longitudinal direction of the first wiring intersects with the direction, and

wherein a longitudinal direction of the second wiring intersects with the direction.

2. The display device according to claim 1 , wherein the curved portion is an U-shaped curved portion.

3. The display device according to claim 1 , wherein a pixel electrode of the electroluminescent element includes a rounded corner.

4. The display device according to claim 1 , wherein a gate electrode of the first transistor is capable of being one electrode of a capacitor.

5. The display device according to claim 4 , wherein the capacitor and the semiconductor layer of the first transistor overlap each other.

6. The display device according to claim 4 , wherein the first wiring is capable of being the other electrode of the capacitor.

7. The display device according to the claim 1 , wherein the first transistor has a multi-gate structure.

8. The display device according to claim 1 , wherein the source region and the drain region of the second transistor is electrically connected to a gate of the first transistor.

9. An electronic device comprising the display device according to claim 1 .

10. The display device according to claim 1 , wherein the second transistor is configured to supply a signal in the second wiring to a gate of the first transistor.

11. The display device according to claim 1 ,

wherein the first wiring is located between adjacent pixel electrodes,

wherein a channel width direction of the channel formation region of the first transistor is parallel to a longitudinal direction of one of the adjacent pixel electrodes, and

wherein a channel width of the channel formation region of the first transistor is longer than a channel length of the channel formation region of the first transistor.

12. A display device comprising a pixel comprising:

a first transistor over a film;

a second transistor over the film, the second transistor electrically connected to the first transistor;

a first wiring over the film, the first wiring electrically connected to a source region and a drain region of the first transistor;

a second wiring over the film, the second wiring electrically connected to a source region and a drain region of the second transistor;

a third wiring over the film, the third wiring electrically connected to a gate of the second transistor; and

an electroluminescent element over the film, the electroluminescent element electrically connected to the source region and the drain region of the first transistor,

wherein a semiconductor layer including a channel formation region of the first transistor includes a curved portion in a top view of the semiconductor layer,

wherein the first wiring is configured to transmit a current that flows into the electroluminescent element via the first transistor,

wherein the first wiring and the channel formation region of the first transistor overlap each other,

wherein the second wiring and a part of the first transistor overlap each other,

wherein the part is one of the source region and the drain region in the semiconductor layer of the first transistor,

wherein the channel formation region of the first transistor includes a region capable of flowing a carrier in a direction,

wherein a longitudinal direction of the first wiring intersects with the direction,

wherein a longitudinal direction of the second wiring intersects with the direction, and

wherein a longitudinal direction of the third wiring is along the direction.

13. The display device according to claim 12 , wherein the curved portion is an U-shaped curved portion.

14. The display device according to claim 12 , wherein a pixel electrode of the electroluminescent element includes a rounded corner.

15. The display device according to claim 12 , wherein a gate electrode of the first transistor is capable of being one electrode of a capacitor.

16. The display device according to claim 15 , wherein the capacitor and the semiconductor layer of the first transistor overlap each other.

17. The display device according to claim 15 , wherein the first wiring is capable of being the other electrode of the capacitor.

18. The display device according to the claim 12 , wherein the first transistor has a multi-gate structure.

19. The display device according to claim 12 , wherein the source region and the drain region of the second transistor is electrically connected to a gate of the first transistor.

20. An electronic device comprising the display device according to claim 12 .

21. The display device according to claim 12 , wherein the second transistor is configured to supply a signal in the second wiring to a gate of the first transistor.

22. The display device according to claim 12 ,

wherein the first wiring is located between adjacent pixel electrodes,

wherein a channel width direction of the channel formation region of the first transistor is parallel to a longitudinal direction of one of the adjacent pixel electrodes, and

wherein a channel width of the channel formation region of the first transistor is longer than a channel length of the channel formation region of the first transistor.

23. A display device comprising a pixel comprising:

a first transistor over a resin;

a second transistor over the resin, the second transistor electrically connected to the first transistor;

a first wiring over the resin, the first wiring electrically connected to a source region and a drain region of the first transistor;

a second wiring over the resin, the second wiring electrically connected to a source region and a drain region of the second transistor; and

an electroluminescent element over the resin, the electroluminescent element electrically connected to the source region and the drain region of the first transistor,

wherein a semiconductor layer including a channel formation region of the first transistor includes a curved portion in a top view of the semiconductor layer,

wherein the first wiring is configured to transmit a current that flows into the electroluminescent element via the first transistor,

wherein the first wiring and the channel formation region of the first transistor overlap each other,

wherein the second wiring and a part of the first transistor overlap each other,

wherein the part is one of the source region and the drain region in the semiconductor layer of the first transistor,

wherein the channel formation region of the first transistor includes a region capable of flowing a carrier in a direction,

wherein a longitudinal direction of the first wiring intersects with the direction, and

wherein a longitudinal direction of the second wiring intersects with the direction.

24. The display device according to claim 23 , wherein the curved portion is an U-shaped curved portion.

25. The display device according to claim 23 , wherein a pixel electrode of the electroluminescent element includes a rounded corner.

26. The display device according to claim 23 , wherein a gate electrode of the first transistor is capable of being one electrode of a capacitor.

27. The display device according to claim 26 , wherein the capacitor and the semiconductor layer of the first transistor overlap each other.

28. The display device according to claim 26 , wherein the first wiring is capable of being the other electrode of the capacitor.

29. The display device according to the claim 23 , wherein the first transistor has a multi-gate structure.

30. The display device according to claim 23 , wherein the source region and the drain region of the second transistor is electrically connected to a gate of the first transistor.

31. An electronic device comprising the display device according to claim 23 .

32. The display device according to claim 23 , wherein the second transistor is configured to supply a signal in the second wiring to a gate of the first transistor.

33. The display device according to claim 23 ,

wherein the first wiring is located between adjacent pixel electrodes,

wherein a channel width direction of the channel formation region of the first transistor is parallel to a longitudinal direction of one of the adjacent pixel electrodes, and

wherein a channel width of the channel formation region of the first transistor is longer than a channel length of the channel formation region of the first transistor.

34. A display device comprising a pixel comprising:

a first transistor over a resin;

a second transistor over the resin, the second transistor electrically connected to the first transistor;

a first wiring over the resin, the first wiring electrically connected to a source region and a drain region of the first transistor;

a second wiring over the resin, the second wiring electrically connected to a source region and a drain region of the second transistor;

a third wiring over the resin, the third wiring electrically connected to a gate of the second transistor; and

an electroluminescent element over the resin, the electroluminescent element electrically connected to the source region and the drain region of the first transistor,

wherein a semiconductor layer including a channel formation region of the first transistor includes a curved portion in a top view of the semiconductor layer,

wherein the first wiring is configured to transmit a current that flows into the electroluminescent element via the first transistor,

wherein the first wiring and the channel formation region of the first transistor overlap each other,

wherein the second wiring and a part of the first transistor overlap each other,

wherein the part is one of the source region and the drain region in the semiconductor layer of the first transistor,

wherein the channel formation region of the first transistor includes a region capable of flowing a carrier in a direction,

wherein a longitudinal direction of the first wiring intersects with the direction,

wherein a longitudinal direction of the second wiring intersects with the direction, and

wherein a longitudinal direction of the third wiring is along the direction.

35. The display device according to claim 34 , wherein the curved portion is an U-shaped curved portion.

36. The display device according to claim 34 , wherein a pixel electrode of the electroluminescent element includes a rounded corner.

37. The display device according to claim 34 , wherein a gate electrode of the first transistor is capable of being one electrode of a capacitor.

38. The display device according to claim 37 , wherein the capacitor and the semiconductor layer of the first transistor overlap each other.

39. The display device according to claim 37 , wherein the first wiring is capable of being the other electrode of the capacitor.

40. The display device according to the claim 34 , wherein the first transistor has a multi-gate structure.

41. The display device according to claim 34 , wherein the source region and the drain region of the second transistor is electrically connected to a gate of the first transistor.

42. An electronic device comprising the display device according to claim 35 .

43. The display device according to claim 34 , wherein the second transistor is configured to supply a signal in the second wiring to a gate of the first transistor.

44. The display device according to claim 34 ,

wherein the first wiring is located between adjacent pixel electrodes,

wherein a channel width direction of the channel formation region of the first transistor is parallel to a longitudinal direction of one of the adjacent pixel electrodes, and

wherein a channel width of the channel formation region of the first transistor is longer than a channel length of the channel formation region of the first transistor.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 23, 2017
From: SATO, MIZUKI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 041711/0702 →
Priority Claims (1)
JP 2006-199292 · Jul 21, 2006 · national
Continuity (8)
Continuation 14989886 · Jan 7, 2016
Continuation 14726752 · Jun 1, 2015
Continuation 14661078 · Mar 18, 2015
Continuation 14275962 · May 13, 2014
Continuation 13848878 · Mar 22, 2013
Continuation 12982200 · Dec 30, 2010
Continuation 11772924 · Jul 3, 2007
Related Publication 20170141178A1 · May 18, 2017