Auto-focus image sensor and digital image processing device including the same

1. An auto-focus image sensor comprising:

a substrate including at least one first pixel configured to detect a phase difference and at least one second pixel configured to detect an image, the substrate including a first surface on which a gate electrode is disposed and a second surface opposite to the first surface;

a fixed charge layer on the second surface;

a deep device isolation portion in the substrate to isolate the at least one first pixel from the at least one second pixel;

a shallow device isolation portion adjacent to the first surface to define an active region; and

a light shielding pattern on the substrate of the at least one first pixel,

wherein an amount of light incident on the first pixel is smaller than the amount of light incident on the second pixel by the light shielding pattern, and

the deep device isolation portion penetrates the substrate to be in contact with both the fixed charge layer and the shallow device isolation portion.

2. The auto-focus image sensor of claim 1 , wherein light is incident through the first surface,

wherein the light shielding pattern is on the first surface, and

wherein charge generated from the first pixel is transmitted through the light shielding pattern.

3. The auto-focus image sensor of claim 2 , further comprising:

an interconnection on the first surface in the second pixel,

wherein charge generated from the second pixel is transmitted through the interconnection, and

wherein the light shielding pattern and the interconnection are at the same height from the first surface.

4. The auto-focus image sensor of claim 3 , wherein the light shielding pattern has a width greater than that of the interconnection.

5. The auto-focus image sensor of claim 1 , wherein light is incident through the second surface, and

wherein the light shielding pattern is on the second surface.

6. The auto-focus image sensor of claim 5 , wherein the deep device isolation portion has a mesh structure,

wherein the light shielding pattern has a mesh structure that overlaps with the deep device isolation portion when viewed from a plan view, and

wherein an area of the light shielding pattern in the first pixel is greater than that of the light shielding pattern in the second pixel.

7. The auto-focus image sensor of claim 6 , wherein the light shielding pattern is configured to receive a ground voltage or a reference voltage.

8. The auto-focus image sensor of claim 1 , wherein the light shielding pattern has: a first opening exposing the first pixel and a second opening exposing the second pixel, and

wherein an area of the first opening is smaller than that of an area of the second opening.

9. The auto-focus image sensor of claim 1 , further comprising:

an interlayer insulating layer on the first surface;

wherein the deep device isolation portion penetrates the substrate to be in contact with the interlayer insulating layer.

10. The auto-focus image sensor of claim 1 , wherein the deep device isolation portion includes: a filling insulation layer and a poly-silicon pattern within the filling insulation layer.

11. The auto-focus image sensor of claim 1 , wherein a part of the fixed charge layer extends into the substrate and the deep device isolation portion includes: a filling insulation layer and the part of the fixed charge layer between the filling insulation layer and the substrate.

12. The auto-focus image sensor of claim 11 , wherein the filling insulation layer extends onto the second surface, and

wherein the fixed charge layer contacts the second surface.

13. The auto-focus image sensor of claim 11 , wherein the fixed charge layer includes a metal oxide or metal fluoride that includes at least one selected from a group consisting of hafnium (Hf), zirconium (Zr), aluminum (Al), tantalum (Ta), titanium (Ti), yttrium (Y), and a lanthanoid.

14. The auto-focus image sensor of claim 11 , wherein the deep device isolation portion further includes: a gap-fill assistant layer spaced apart from the fixed charge layer and in contact with the filling insulation layer.

15. The auto-focus image sensor of claim 1 , wherein a part of the fixed charge layer extends into the substrate, and the deep device isolation portion includes: the part of the fixed charge layer in contact with a sidewall of the substrate and an air gap region exposing the fixed charge layer.

16. The auto-focus image sensor of claim 1 , wherein a part of the fixed charge layer extends into the substrate and the deep device isolation portion includes:

a poly-silicon pattern in a first trench extending from the first surface toward the second surface;

a first filling insulation layer in contact with both sidewalls of the poly-silicon pattern in the first trench;

the part of the fixed charge layer in a second trench the second trench overlapping with the first trench, the fixed charge layer in contact with both the first filling insulation layer and the poly-silicon pattern, and the fixed charge layer covering an inner sidewall of the second trench; and

a second filling insulation layer filling the second trench.

17. An auto-focus image sensor comprising:

a substrate including at least one first pixel configured to detect a phase difference and at least one second pixel configured to detect an image, the substrate including a first surface on which a gate electrode is disposed and a second surface opposite to the first surface;

a fixed charge layer on the second surface;

an insulation layer on the fixed charge layer;

an isolation portion configured to isolate the at least one first pixel from at least one second pixel; and

a light shield on the substrate and between the at least one first pixel and incident light,

wherein a part of the fixed charge layer extends into the substrate and defines sidewalls of an air gap,

the part of the fixed charge layer and the air gap constitutes the isolation portion, and

a part of the insulation layer defines a top surface of the air gap.

18. The auto-focus image sensor of claim 17 , wherein an amount of light incident on the at least one first pixel is smaller than an amount of light incident on the at least one second pixel.

19. The auto-focus image sensor of claim 17 , wherein the isolation portion has a mesh structure and surrounds the at least one first pixel and the at least one second pixel in at least two directions.

20. The auto-focus image sensor of claim 17 , the auto-focus image sensor further comprising:

a color filter and a micro-lens on the first surface or the second surface,

wherein the isolation portion penetrates the substrate and is exposed at the first and second surfaces.