IP Library › Granted Patent US 9,946,470
Granted Patent B2
US 9,946,470 · App. 15/156,691 · Granted Apr 17, 2018

High-throughput low-latency hybrid memory module

Inventors: Aws Shallal (Santa Clara, CA); Michael Miller (Santa Clara, CA); Stephen Horn (Santa Clara, CA)
Assignee: Rambus Inc.
G06F3/0611G06F3/0613G06F3/0656G06F3/0659G06F3/0679G11C14/0009G06F13/1668G11C7/1051
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Quick Facts
Patent No.
US 9,946,470
App. No.
15/156,691
Granted
Apr 17, 2018
Kind
B2
Abstract

Disclosed herein are techniques for implementing high-throughput low-latency hybrid memory modules with improved data backup and restore throughput, enhanced non-volatile memory controller (NVC) resource access, and enhanced mode register setting programmability. Embodiments comprise a command replicator to generate sequences of one or more DRAM read and/or write and/or other commands to be executed in response to certain local commands from a non-volatile memory controller (NVC) during data backup and data restore operations. Other embodiments comprise an access engine to enable an NVC in a host control mode to trigger entry into a special mode and issue commands to access a protected register space. Some embodiments comprise a mode register controller to capture and store the data comprising mode register setting commands issued during a host control mode, such that an NVC can program the DRAM mode registers in an NVC control mode.

Claims (22)

1. A memory system receiving one or more host commands from a host memory controller, the memory system comprising:

one or more DRAM devices;

at least one non-volatile memory controller coupled to one or more flash memory devices;

at least one command buffer coupled to the host memory controller, the at least one non-volatile memory controller, and the one or more DRAM devices, to receive the one or more host commands from the host memory controller and receive one or more local commands from the at least one non-volatile memory controller, the at least one command buffer comprising one or more control setting registers; and

a mode register controller to capture one or more captured mode register settings from the one or more host commands, modify at least one of the one or more captured mode register settings based on the one more local commands to produce one or more modified captured mode register settings, and generate one or more generated mode register setting commands based at least in part on the one or more modified captured mode register settings.

2. The memory system of claim 1 , wherein the one or more generated mode register setting commands are issued to the one or more DRAM devices by the at least one command buffer.

3. The memory system of claim 2 , wherein the one or more generated mode register setting commands are issued to the one or more DRAM devices by the at least one command buffer responsive to receiving the one or more local commands at the at least one command buffer.

4. The memory system of claim 2 , wherein the one or more generated mode register setting commands are issued to the one or more DRAM devices by the at least one command buffer responsive to at least one of a data backup event or a data restore event.

5. The memory system of claim 1 , wherein the one or more captured mode register settings are stored in the one or more control setting registers.

6. The memory system of claim 1 , wherein the one or more captured mode register settings are accessible by the host memory controller or the at least one non-volatile memory controller.

7. The memory system of claim 1 , wherein the one or more captured mode register settings are captured during an initialization of the memory system.

8. The memory system of claim 1 , wherein the one or more captured mode register settings are modifiable by the host memory controller or the at least one non-volatile memory controller.

9. A memory system receiving one or more host commands from a host memory controller, the memory system comprising:

one or more DRAM devices;

at least one non-volatile memory controller coupled to one or more flash memory devices;

at least one command buffer coupled to the host memory controller, the at least one non-volatile memory controller, and the one or more DRAM devices, to receive the one or more host commands from the host memory controller and receive one or more local commands from the at least one non-volatile memory controller, the at least one command buffer comprising one or more control setting registers; and

a mode register controller to capture one or more captured mode register settings from the one or more host commands, modify at least one of the one or more captured mode register settings based on the one more local commands to produce one or more modified captured mode register settings, and generate one or more generated mode register setting commands based at least in part on the one or more modified captured mode register settings, wherein at least one of the one or more modified captured mode register settings comprises one or more accessible register bits accessible by the at least one non-volatile memory controller.

10. A memory system receiving one or more host commands from a host memory controller, the memory system comprising:

one or more DRAM devices;

at least one non-volatile memory controller coupled to one or more flash memory devices;

at least one command buffer coupled to the host memory controller, the at least one non-volatile memory controller, and the one or more DRAM devices, to receive the one or more host commands from the host memory controller and receive one or more local commands from the at least one non-volatile memory controller, the at least one command buffer comprising one or more control setting registers; and

a mode register controller to capture one or more captured mode register settings from the one or more host commands, modify at least one of the one or more captured mode register settings based on the one more local commands to produce one or more modified captured mode register settings, and generate one or more generated mode register setting commands based at least in part on the one or more modified captured mode register settings, wherein at least one of the one or more modified captured mode register settings comprises one or more protected register bits not accessible by the at least one non-volatile memory controller.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 14, 2016
From: INPHI CORPORATION
To: RAMBUS INC.
Reel/Frame 040038/0898 →
Continuity (2)
Continuation 14883155 · Oct 14, 2015
Related Publication 20170109058A1 · Apr 20, 2017