Plasma poisoning to enable selective deposition

1. A method of performing atomic layer deposition in selected zones of a workpiece, comprising:

depositing a first photolithographic mask on said workpiece comprising first openings corresponding to portions of said selected zones;

treating said workpiece by exposure to species derived from a fluoro-carbon plasma;

removing said first photolithographic mask;

depositing a second photolithographic mask on said workpiece comprising second openings corresponding to remaining portions of said selected zones;

treating said workpiece by exposure to species derived from a fluoro-carbon plasma;

removing said second photolithographic mask; and

performing an atomic layer deposition process.

2. The method of claim 1 further comprising removing growth material from areas outside of said selected zones.

3. The method of claim 1 wherein said treating said workpiece by exposure to species derived from a fluoro-carbon plasma comprises forming a fluoro-carbon plasma and exposing said workpiece to said plasma.

4. The method of claim 1 wherein said treating said workpiece by exposure to species derived from a fluoro-carbon plasma comprises forming an ion beam from a fluoro-carbon plasma and directing said ion beam to said workpiece.

5. The method of claim 1 wherein said atomic layer deposition process produces a growth material.

6. A method of performing atomic layer deposition in selected zones of a workpiece, comprising:

depositing a first photolithographic mask on said workpiece comprising first openings corresponding to portions of said selected zones;

treating said workpiece by exposure to species derived from a fluoro-carbon plasma;

removing said first photolithographic mask;

performing a first atomic layer deposition process on said workpiece;

depositing a second photolithographic mask on said workpiece comprising second openings corresponding to remaining portions of said selected zones;

treating said workpiece by exposure to species derived from a fluoro-carbon plasma;

removing said second photolithographic mask; and

performing a second atomic layer deposition process.

7. The method of claim 6 wherein said first and second atomic layer deposition processes deposit different growth materials on said workpiece.

8. The method of claim 6 wherein said treating said workpiece by exposure to species derived from a fluoro-carbon plasma comprises forming a fluoro-carbon plasma and exposing said workpiece to said plasma.

9. The method of claim 6 wherein said treating said workpiece by exposure to species derived from a fluoro-carbon plasma comprises forming an ion beam from a fluoro-carbon plasma and directing said ion beam to said workpiece.

10. The method of claim 6 wherein said first and second atomic layer deposition process produce on said workpiece different respective growth materials.

11. A method of performing atomic layer deposition in selected zones of a workpiece having 3-dimensional structures on a surface thereof comprising vertical walls separated by trenches, comprising:

providing a directional plasma source emitting ions along an ion propagation direction toward said workpiece;

orienting said ion propagation direction relative to said vertical walls to enable said vertical walls to mask said selected zones from the ions emitted by said directional plasma source; and

performing an atomic layer deposition process on said workpiece.

12. The method of claim 11 wherein said directional plasma source emits ions in two beams tilted relative to said vertical walls through opposing angles and said two beams strike opposing ones of said vertical walls.

13. The method of claim 11 wherein said directional plasma source emits a beam tilted relative to said vertical walls and said beams strikes one of said vertical walls.

14. The method of claim 11 wherein said directional plasma source emits ions in one beam parallel to said vertical walls.