Semiconductor apparatus having multiple ranks with noise elimination
A semiconductor apparatus includes a plurality of dies. Any one of the dies may be set to a first rank and another of the dies may be set to a second rank. One or more of the first and second ranks may be configured to output any one of an even-numbered byte and an odd-numbered byte through an input/output stage at a timing earlier than the other one, according to a read command.
1. A semiconductor apparatus comprising a plurality of dies, any one of the dies being set to a first rank and another of the dies being set to a second rank,
wherein one or more of the first and second ranks are configured to output any one of an even-numbered byte and an odd-numbered byte through an input/output stage at a timing earlier than the other one, according to a read command,
wherein input/output stages of the first rank are coupled to input/output stages of the second rank,
wherein the first rank comprises a first input/output stage corresponding to the even-numbered byte and a second input/output stage corresponding to the odd-numbered byte,
wherein the second rank comprises a first input/output stage corresponding to the even-numbered byte and a second input/output stage corresponding to the odd-numbered byte, and
wherein the first input/output stage of the first rank is coupled to the first input/output stage of the second rank, and the second input/output stage of the first rank is coupled to the second input/output stage of the second rank.
2. The semiconductor apparatus according to claim 1 , wherein the first input/output stage of the first rank further comprises even-numbered DBI (Data Bus Inversion) pads and the second input/output stage of the first rank further comprises odd-number DBI pads.
3. The semiconductor apparatus according to claim 1 , wherein the first rank comprises:
a cell array configured to output data according to a read command;
a DBI (Data Bus Inversion) circuit configured to generate DBI data and DBI flags by performing a DBI operation on the data output from the cell array, and output the DBI data and the DBI flags;
a first driver configured to drive an even-numbered byte among the DBI data to a first input/output stage at a first timing;
a second driver configured to drive an odd-numbered byte among the DBI data to a second input/output stage at a second timing according to a preset signal; and
a preset signal generation circuit configured to generate the preset signal according to a DBI reset signal for resetting the DBI circuit.
4. The semiconductor apparatus according to claim 3 , wherein the second driver comprises:
a first logic gate configured to receive data corresponding to a first synchronous clock signal among the DBI data;
a second logic gate configured to receive data corresponding to a second synchronous clock signal among the DBI data;
a latch configured to store output signals of the first and second logic gates; and
a transmitter configured to drive the signal stored in the latch as the odd-numbered byte to the second input/output stage during an active period of an odd-numbered output enable signal.
5. The semiconductor apparatus according to claim 3 , wherein the preset signal generation circuit performs a logical operation on an even-numbered output enable signal, an odd-numbered output enable signal, and the DBI reset signal, and outputs the operation result as the preset signal.
6. A semiconductor apparatus comprising first and second dies, input/output stages of the first die set to a first rank being coupled to input/output stages of the second die set to a second rank,
wherein one or more of the first and second ranks are configured to sequentially output even-numbered bytes and odd-numbered bytes through the input/output stages according to a read command, and output any one of the even-numbered byte and the odd-numbered byte corresponding to the earliest in order among the even-numbered bytes and the odd-numbered bytes through the input/output stage at a timing earlier than the other one,
wherein the first rank comprises a first input/output stage corresponding to the even-numbered byte and a second input/output stage corresponding to the odd-numbered byte,
wherein the second rank comprises a first input/output stage corresponding to the even-numbered byte and a second input/output stage corresponding to the odd-numbered byte, and
wherein the first input/output stage of the first rank is coupled to the first input/output stage of the second rank, and the second input/output stage of the first rank is coupled to the second input/output stage of the second rank.
7. The semiconductor apparatus according to claim 6 , wherein the first input/output stage of the first rank further comprises even-numbered DBI (Data Bus Inversion) pads and the second input/output stage of the first rank further comprises odd-numbered DBI pads.
8. The semiconductor apparatus according to claim 6 , wherein the first rank comprises:
a cell array configured to output data according to a read command;
a DBI (Data Bus Inversion) circuit configured to generate DBI data and DBI flags by performing a DBI operation on the data output from the cell array, output the DBI data and the DBI flags, and be reset according to a DBI reset signal;
a first driver configured to drive an even-numbered byte among the DBI data to a first input/output stage at a first timing;
a second driver configured to drive an odd-numbered byte among the DBI data to a second input/output stage at a timing earlier than the first timing, according to a preset signal; and
a preset signal generation circuit configured to generate the preset signal according to the DBI reset signal.
9. The semiconductor apparatus according to claim 8 , wherein the second driver comprises:
a first logic gate configured to receive data corresponding to a first synchronous clock signal among the DBI data;
a second logic gate configured to receive data corresponding to a second synchronous clock signal among the DBI data;
a latch configured to store output signals of the first and second logic gates; and
a transmitter configured to drive the signal stored in the latch as the odd-numbered byte to the second input/output stage during an active period of an odd-numbered output enable signal.
10. The semiconductor apparatus according to claim 8 , wherein the preset signal generation circuit performs a logical operation on an even-numbered output enable signal, an odd-numbered output enable signal, and the DBI reset signal, and outputs the operation result as the preset signal.
11. The semiconductor apparatus according to claim 10 , further comprising an output timing control circuit configured to generate the even-numbered output enable signal and the odd-numbered output enable signal, using internal shift signals generated by sequentially shifting a source signal based on a clock signal.
12. The semiconductor apparatus according to claim 11 , wherein the output timing control circuit comprises:
a first flip-flop configured to temporarily store one of the internal shift signals according to the clock signal, and generate a first internal signal;
a second flip-flop configured to temporarily store the first internal signal according to the clock signal, and output the stored signal as the even-numbered output enable signal; and
a logic gate configured to perform an OR operation on the first internal signal and the even-numbered output enable signal and output the operation result as the odd-numbered output enable signal.
13. A semiconductor apparatus comprising:
a cell array configured to output data according to a read command;
a DBI (Data Bus Inversion) circuit configured to generate DBI data and DBI flags by performing a DBI operation on the data output from the cell array, output the DBI data and the DBI flags, and be reset according to a DBI reset signal;
a first driver configured to drive an even-numbered byte among the DBI data to a first input/output stage at a first timing;
a second driver configured to drive an odd-numbered byte among the DBI data to a second input/output stage at a timing earlier than the first timing, according to a preset signal; and
a preset signal generation circuit configured to generate the preset signal according to the DBI reset signal.
14. The semiconductor apparatus according to claim 13 , wherein the second driver comprises:
a first logic gate configured to receive data corresponding to a first synchronous clock signal among the DBI data;
a second logic gate configured to receive data corresponding to a second synchronous clock signal among the DBI data;
a latch configured to store output signals of the first and second logic gates; and
a transmitter configured to drive the signal stored in the latch as the odd-numbered byte to the second input/output stage during an active period of an odd-numbered output enable signal.
15. The semiconductor apparatus according to claim 13 , wherein the preset signal generation circuit performs a logical operation on an even-numbered output enable signal, an odd-numbered output enable signal, and the DBI reset signal, and outputs the operation result as the preset signal.
16. The semiconductor apparatus according to claim 13 , further comprising an output timing control circuit configured to generate the even-numbered output enable signal and the odd-numbered output enable signal, using internal shift signals generated by sequentially shifting a source signal based on a clock signal.
17. The semiconductor apparatus according to claim 16 , wherein the output timing control circuit comprises:
a first flip-flop configured to temporarily store one of the internal shift signals according to the clock signal, and generate a first internal signal;
a second flip-flop configured to temporarily store the first internal signal according to the clock signal, and output the stored signal as the even-numbered output enable signal; and
a logic gate configured to perform an OR operation on the first internal signal and the even-numbered output enable signal and output the operation result as the odd-numbered output enable signal.