Light emitting device package and display device using the same
A light emitting device package includes a substrate for growth having a plurality of light-emitting windows, a plurality of semiconductor light-emitting units corresponding to the plurality of light-emitting windows, each semiconductor light-emitting unit having a first surface contacting the substrate for growth and a second surface opposite the first surface, and each semiconductor light-emitting unit having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked on each other, a plurality of wavelength conversion units respectively disposed inside the plurality of light-emitting windows, each wavelength conversion unit is configured to provide light having a wavelength different from light emitted by the respective semiconductor light-emitting unit, a metal support layer disposed on at least one surface of each of the plurality of semiconductor light-emitting units and having a lateral surface coplanar with a lateral surface of the substrate for growth, and an insulating layer disposed between each of the plurality of semiconductor light-emitting units and a respective metal support layer.
1. A light emitting device package, comprising:
a substrate for growth having a plurality of light-emitting windows;
a plurality of semiconductor light-emitting units corresponding to the plurality of light-emitting windows, each semiconductor light-emitting unit having a first surface contacting the substrate for growth and a second surface opposite the first surface, and each semiconductor light-emitting unit having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked on each other;
a plurality of wavelength conversion units respectively disposed inside the plurality of light-emitting windows, each wavelength conversion unit is configured to provide light having a wavelength different from light emitted by the respective semiconductor light-emitting unit;
a metal support layer disposed on at least one surface of each the plurality of semiconductor light-emitting units and having a lateral surface coplanar with a lateral surface of the substrate for growth; and
an insulating layer disposed between each of the plurality of semiconductor light-emitting units and a respective metal support layer.
2. The light emitting device package of claim 1 , wherein the plurality of light-emitting windows are defined by a partition structure.
3. The light emitting device package of claim 1 , wherein each of the plurality of the semiconductor light-emitting units includes a first electrode and a second electrode electrically connected to the corresponding first conductivity-type semiconductor layer and the corresponding second conductivity-type semiconductor layer, respectively, and
the metal support layer includes: a plurality of first regions respectively connected to the first electrodes of the plurality of semiconductor light-emitting units; and
a second region disposed to be spaced apart from the first regions and commonly connected to the second electrodes of the plurality of semiconductor light-emitting units.
4. The light emitting device package of claim 1 , wherein each of the plurality of the semiconductor light-emitting units includes a first electrode and a second electrode electrically connected to the corresponding first conductivity-type semiconductor layer and the corresponding second conductivity-type semiconductor layer, respectively, and
the metal support layer includes: a plurality of first regions respectively connected to the first electrodes of the plurality of semiconductor light-emitting units; and
a second region surrounding the first regions and commonly connected to the second electrodes of the plurality of semiconductor light-emitting units.
5. The light emitting device package of claim 3 , wherein the second region covers a region including an edge of the insulating layer.
6. The light emitting device package of claim 3 , wherein the insulating layer includes a plurality of first openings and a second opening disposed on the first electrodes and the second electrodes, respectively, and
the first electrodes and the second electrodes are connected to the plurality of first regions and the second region of the metal support layer through the plurality of first openings and the second opening, respectively.
7. The light emitting device package of claim 1 , wherein the metal support layer is formed of a material including at least one of copper (Cu), gold (Au), and aluminum (Al).
8. The light emitting device package of claim 1 , wherein the metal support layer has a thickness of at least 100 nm or more.
9. The light emitting device package of claim 1 , wherein the insulating layer is spaced apart from a lateral surface of the substrate for growth by a distance greater than a thickness of the metal support layer.
10. The light emitting device package of claim 2 , wherein in a region of one surface of the partition structure in contact with the first surface except for a region in contact with the plurality of semiconductor light-emitting units, a trench for isolating the plurality of semiconductor light-emitting units into discrete device units is formed.
11. The light emitting device package of claim 10 , wherein on a side wall of the trench, the insulating layer and the metal support layer are individually stacked to be extended in a vertical direction.
12. The light emitting device package of claim 10 , wherein a depth of the trench is greater than a thickness of the insulating layer.
13. The light emitting device package of claim 1 , wherein the insulating layer is embedded between the substrate for growth and the metal support layer on the first surface.
14. The light emitting device package of claim 1 , wherein an upper surface of the insulating layer is coplanar with an upper surface of the metal support layer on the first surface.
15. A light emitting device package, comprising:
a cell array, including a plurality of semiconductor light-emitting units, each semiconductor light-emitting unit having a first surface at a first vertical height and a second surface opposite the first surface at a second vertical height, and each semiconductor light emitting unit including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked on each other;
a plurality of wavelength conversion units disposed respectively on the plurality of semiconductor light-emitting units, each wavelength conversion unit having a first surface at the first vertical height and a second surface at a third vertical height, wherein the first vertical height is between the second vertical height and the third vertical height, each wavelength conversion unit configured to convert a wavelength of light, emitted by a respective one of the plurality of semiconductor light emitting units, into a different wavelength of light;
a metal support layer disposed on at least one surface of each of the plurality of semiconductor light-emitting units and having a lateral surface coplanar with a lateral surface of the substrate for growth; and
an insulating layer disposed between each of the plurality of semiconductor light-emitting units and a respective metal support layer.
16. The light emitting device package of claim 15 , further comprising a partition structure disposed in a space between the plurality of wavelength conversion units so as to separate the plurality of wavelength conversion units from each other, the partition structure extending between the first vertical height and the third vertical height.
17. The light emitting device package of claim 15 , wherein each of the plurality of the semiconductor light-emitting units includes a first electrode and a second electrode electrically connected to the corresponding first conductivity-type semiconductor layer and the corresponding second conductivity-type semiconductor layer, respectively, and
the metal support layer includes: a plurality of first regions respectively connected to the first electrodes of the plurality of semiconductor light-emitting units; and
a second region disposed to be spaced apart from the first regions and commonly connected to the second electrodes of the plurality of semiconductor light-emitting units.
18. The light emitting device package of claim 15 , wherein each of the plurality of the semiconductor light-emitting units includes a first electrode and a second electrode electrically connected to the corresponding first conductivity-type semiconductor layer and the corresponding second conductivity-type semiconductor layer, respectively, and
the metal support layer includes: a plurality of first regions respectively connected to the first electrodes of the plurality of semiconductor light-emitting units; and
a second region surrounding the first regions and commonly connected to the second electrodes of the plurality of semiconductor light-emitting units.
19. The light emitting device package of claim 17 , wherein the second region covers a region including an edge of the insulating layer.
20. A display device, comprising:
a display panel including a circuit board and a plurality of light emitting device packages disposed on the circuit board in rows and columns, each of the plurality of light emitting device packages providing a single pixel;
a panel driving unit configured to drive the display panel; and
a control unit configured to control the panel driving unit,
wherein each of the plurality of light emitting device packages includes:
a substrate for growth having a plurality of light-emitting windows;
a plurality of semiconductor light-emitting units corresponding to the plurality of light-emitting windows, each semiconductor light-emitting unit including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;
a plurality of wavelength conversion units correspondingly disposed inside the plurality of light-emitting windows, each wavelength conversion unit configured to convert a wavelength of light, emitted by a respective one of the plurality of semiconductor light emitting units, into a different wavelength of light;
a metal support layer disposed on at least one surface of each of the plurality of semiconductor light-emitting units and having a lateral surface coplanar with a lateral surface of the substrate for growth; and
an insulating layer disposed between each of the plurality of semiconductor light-emitting units and a respective metal support layer.