Semiconductor device
A semiconductor device including a semiconductor substrate of a first conductivity type, a plurality of base regions of a second conductivity type formed on a first principal surface of the semiconductor substrate via a semiconductor layer of the first conductivity type, and a plurality of source regions of the first conductivity type formed in the base regions. Each base region, in a top-down view from an angle perpendicular to the first principle surface, is of a polygonal shape. Each adjacent two of the base regions in the top-down view have two sides, one from each of the two base regions, that face each other across a portion of the semiconductor layer, the source region being formed at only one of the two sides.
1. A semiconductor device, comprising:
a semiconductor substrate of a first conductivity type;
a semiconductor layer of the first conductivity type, disposed on a first principal surface of the semiconductor substrate, the semiconductor layer having an impurity concentration lower than that of the semiconductor substrate;
a base region of a second conductivity type, disposed in a surface region of the semiconductor layer;
a source region of the first conductivity type, disposed in a surface region of the base region;
a contact region of the second conductivity type, disposed in the surface region of the base region, the contact region having an impurity concentration higher than that of the base region;
a source electrode in contact with the source region and the contact region;
a gate insulating film disposed on a portion of the surface region of the base region between the semiconductor layer and the source region;
a gate electrode disposed on a surface of the gate insulating film; and
a drain electrode disposed on a second principal surface of the semiconductor substrate, wherein
the base region includes a plurality of base region portions, each of which, in a top-down view from an angle perpendicular to the first principle surface of the semiconductor substrate, is of a polygonal shape, and
each adjacent two of the base region portions in the top-down view have two sides, one from each of the two base region portions, that face each other across the gate electrode, the source region being disposed at only one of the two sides.
2. The semiconductor device of claim 1 , wherein the semiconductor substrate is formed of silicon carbide.
3. A semiconductor device, comprising:
a semiconductor substrate of a first conductivity type;
a semiconductor layer of the first conductivity type, disposed on a first principal surface of the semiconductor substrate, the semiconductor layer having an impurity concentration lower than that of the semiconductor substrate;
a semiconductor region of a second conductivity type, disposed in a portion of a surface region of the semiconductor layer;
a base region of the second conductivity type, disposed on a surface of the semiconductor region, the base region having an impurity concentration lower than that of the semiconductor region;
a well region of the first conductivity type, disposed on a surface of the semiconductor layer and in contact with the base region, the well region having an impurity concentration lower than that of the semiconductor substrate;
a source region of the first conductivity type, disposed in a surface region of the base region and being away from the well region, the source region having an impurity concentration higher than that of the well region;
a contact region of the second conductivity type, disposed on the surface of the semiconductor region and in contact with the source region and the base region, the contact region having an impurity concentration higher than that of the base region;
a source electrode in contact with the source region and the contact region;
a gate insulating film disposed on a portion of the surface region of the base region between the well region and the source region;
a gate electrode disposed on a surface of the gate insulating film; and
a drain electrode disposed on a second principal surface of the semiconductor substrate, wherein
the base region includes a plurality of base region portions, each of which, in a top-down view from an angle perpendicular to the first principle surface of the semiconductor substrate, is of a polygonal shape, and
each adjacent two of the base region portions in the top-down view have two sides, one from each of the two base region portions, that face each other across the gate electrode, the source region being disposed at only one of the two sides.
4. The semiconductor device of claim 3 , wherein the semiconductor substrate is formed of silicon carbide.
5. The semiconductor device of claim 3 , wherein the well region is formed of silicon carbide.
6. A semiconductor device, comprising:
a semiconductor substrate of a first conductivity type;
a plurality of base regions of a second conductivity type, formed on a first principal surface of the semiconductor substrate via a semiconductor layer of the first conductivity type, each base region, in a top-down view from an angle perpendicular to the first principle surface, being of a polygonal shape; and
a plurality of source regions of the first conductivity type formed in the base regions; wherein
each adjacent two of the base regions in the top-down view have two sides, one from each of the two base regions, that face each other across a portion of the semiconductor layer, the source region being formed at only one of the two sides.
7. The semiconductor device of claim 1 , further comprising:
a plurality of contact regions of the second conductivity type disposed in the base regions;
a source electrode in contact with the contact regions;
a gate electrode disposed on the portion of the semiconductor layer and on a portion of the base regions via a gate insulating film; and
a drain electrode disposed on a second principal surface of the semiconductor substrate.