Field-effect transistor, display element, image display device, and system

1. A field-effect transistor, comprising:

a base;

a passivation layer including

a first passivation layer which contains a first oxide containing Si (silicon) and an alkaline earth metal, and

a second passivation layer which contains a second oxide containing an alkaline earth metal and a rare-earth element;

a gate insulating layer formed between the base and the passivation layer;

a source electrode and a drain electrode, which are formed to be in contact with the gate insulating layer;

a semiconductor layer, which is formed between at least the source electrode and the drain electrode, and is in contact with the gate insulating layer, the source electrode, and the drain electrode; and

a gate electrode, which is in contact with the gate insulating layer, and faces the semiconductor layer via the gate insulating layer,

wherein the first passivation layer includes a first surface and a second surface opposite to said first surface of the first passivation layer, and the second passivation layer includes a first surface and a second surface opposite to said first surface of the second passivation layer, and

wherein (a) the second surface of the first passivation layer, which contains the first oxide containing Si (silicon) and the alkaline earth metal, contacts and covers the first surface of the second passivation layer, which contains the second oxide containing the alkaline earth metal and the rare-earth element, or (b) the second surface of the second passivation layer contacts and covers the first surface of the first passivation layer.

2. The field-effect transistor according to claim 1 , wherein the first oxide further contains Al (aluminum), or B (boron), or both thereof.

3. The field-effect transistor according to claim 1 , wherein the second oxide further contains Zr (zirconium), or Hf (hafnium), or both thereof.

4. The field-effect transistor according to claim 1 , wherein the semiconductor layer is an oxide semiconductor.

5. A display element, comprising:

a light control element configured to control light output according to a driving signal; and

a driving circuit containing the field-effect transistor according to claim 1 , which is configured to drive the light control element.

6. The display element according to claim 5 , wherein the light control element contains an electroluminescent element, an electrochromic element, a liquid crystal element, an electrophoretic element, or an electrowetting element.

7. An image display device, which displays an image corresponding to image data, the image display device comprising:

a plurality of display elements each constituted like the display element according to claim 5 , the plurality of display elements being arranged in a matrix;

a plurality of lines configured to separately apply gate voltage to field-effect transistors in each of the display elements; and

a display control device configured to individually control the gate voltage of each of the field-effect transistors through the lines corresponding to the image data.

8. A system, comprising:

the image display device according to claim 7 ; and

an image data generating device configured to generate an image data based on an image information to be displayed, and to output the generated image data to the image display device.

9. The field-effect transistor according to claim 1 , wherein the material of the first passivation layer is different than that of the second passivation layer.