Substrate having a multilayer with thermal properties and an absorbing layer
The invention relates to a substrate ( 10 ) coated on one face ( 11 ) with a multilayer of thin films ( 14 ) with reflective properties in the infrared and/or in the solar radiation band comprising a single functional metal layer ( 140 ), in particular of silver or of a metal alloy containing silver, and two dielectric coatings ( 120, 160 ), said coatings each comprising at least one dielectric layer ( 122, 164 ), said functional layer ( 140 ) being disposed between the two dielectric coatings ( 120, 160 ), said multilayer furthermore comprising a single absorbing layer ( 19 ), characterized in that said absorbing layer ( 19 ) is a metal layer having a physical thickness in the range between 0.5 nm and 1.5 nm, or even between 0.6 nm and 1.2 nm and is situated directly on said face ( 11 ) and directly under a dielectric layer of nitride not comprising any oxygen.
1. A coated substrate consisting of a substrate coated on one face with a multilayer, said multilayer comprising, in the following order from the face of the substrate:
an absorbing layer, which is a metal layer having a physical thickness in the range between 0.5 nm and 1.5 nm and which is situated directly on said face;
a first dielectric coating comprising at least one dielectric layer, wherein the first dielectric layer comprises a dielectric layer of a nitride not comprising any oxygen that is in direct contact with the absorbing layer;
optionally a barrier undercoating comprising nickel or titanium and having a physical thickness e′ such that 0.2 nm≤e′≤2.5 nm;
a single functional metal layer having reflective properties in an infrared and/or in a solar radiation band;
optionally a barrier overcoating comprising nickel or titanium and having a physical thickness e′ such that 0.2 nm≤e′≤2.5 nm; and
a second dielectric coating comprising at least one dielectric layer,
wherein:
the multilayer comprises no more than one absorbing layer excluding the optional barrier overcoating and the optional barrier undercoating;
if the barrier undercoating is present, the functional layer is deposited directly onto the barrier undercoating; and
if the barrier overcoating is present, the functional layer is deposited directly under the barrier undercoating.
2. The substrate of claim 1 , wherein the metal absorbing layer is a layer of titanium.
3. The substrate of claim 1 , wherein the first dielectric coating comprises a high index layer of a material having a refractive index in the range between 2.3 and 2.7.
4. The substrate of claim 3 , wherein the high index layer has a physical thickness in the range between 5 and 15 nm.
5. The substrate of claim 1 , wherein a physical thickness of the dielectric layer of nitride is in the range between 10 and 20 nm.
6. The substrate of claim 1 , wherein the barrier undercoating is present and/or the barrier overcoating is present.
7. The substrate of claim 1 , wherein a final layer of an overlying dielectric coating layer furthest from the substrate is an oxide based on titanium oxide (TiO x ) or a mixed oxide of zinc and tin (SnZnO x ).
8. A multiple glazing unit, comprising at least two substrates which are held together by a chassis structure, said glazing unit forming a separation between an external space and an internal space,
wherein:
at least one gas separation layer is disposed between the two substrates; and
at least one of the two substrates is a substrate of claim 1 .
9. The multiple glazing unit of claim 8 , wherein
the glazing unit exhibits a selectivity S, which corresponds to a ratio of a light transmission T L in visible over a solar factor FS, >1.45 while at the same time having a light transmission T L >55%, or
wherein the glazing unit exhibits a selectivity S≥1.5 while at the same time having a light transmission T L ≥57%.
10. The substrate of claim 1 , wherein the single functional metal layer is a metal layer comprising silver or a metal alloy containing silver.
11. The substrate of claim 1 , wherein the metal layer has a physical thickness in the range between 0.6 nm and 1.2 nm.
12. The substrate of claim 3 , wherein the high index layer comprises an oxide.
13. The substrate of claim 5 , wherein the dielectric layer of nitride comprises silicon nitride Si 3 N 4 .