Semiconductor module
To bond a layered substrate and a cooling chamber having different linear expansion coefficients while preventing cracking and breaking, provided is a semiconductor module including a layered substrate formed by layering a circuit board, an insulating board, and a metal board; a semiconductor chip mounted on the circuit board; and a cooling chamber bonded to the metal board by solder. The cooling chamber includes a first board portion bonded to the metal board; a second board portion facing the first board portion; and a plurality of zigzag fins arranged between the first board portion and the second board portion. The plurality of zigzag fins are joined to the first board portion and the second board portion, and a flow path through which a coolant passes is formed by the first board portion, the second board portion, and the plurality of zigzag fins.
1. A semiconductor module, comprising:
a layered substrate formed by layering a circuit board, an insulating board, and a metal board;
a semiconductor chip mounted on the circuit board; and
a cooling chamber bonded to the metal board by solder, wherein
the cooling chamber includes:
a first board portion bonded to the metal board;
a second board portion facing the first board portion; and
a plurality of zigzag fins arranged between the first board portion and the second board portion,
the plurality of zigzag fins are joined to the first board portion and the second board portion,
a flow path through which a coolant passes is formed by the first board portion, the second board portion, and the plurality of zigzag fins, and
a thickness of each of the plurality of zigzag fins is greater than or equal to 0.5 mm and less than or equal to 0.8 mm.
2. The semiconductor module according to claim 1 , further comprising:
a resin portion that is formed by a hard resin and seals the semiconductor chip and the layered substrate, wherein
a solder bonding surface of the metal board is exposed from the resin portion.
3. The semiconductor module according to claim 1 , wherein
the metal board is formed by a metal layer bonded to the insulating board and a first heat spreader bonded to the metal layer.
4. The semiconductor module according to claim 1 , wherein
the circuit board is formed by a circuit layer bonded to the insulating board and a second heat spreader bonded to the circuit layer.
5. The semiconductor module according to claim 1 , wherein
the plurality of zigzag fins are arranged in parallel between the first board portion and the second board portion, and
the flow path through which the coolant passes is formed between the first board portion and the second board portion in a direction orthogonal to a direction in which the plurality of zigzag fins are arranged in parallel.
6. The semiconductor module according to claim 2 , wherein
the solder bonding surface of the metal board protrudes from a bottom surface of the resin portion.
7. The semiconductor module according to claim 6 , wherein
a thickness of the metal board is greater than or equal to 0.5 mm and less than 1.0 mm.
8. A semiconductor module, comprising:
a layered substrate formed by layering a circuit board, an insulating board, and a metal board;
a semiconductor chip mounted on the circuit board; and
a cooling chamber bonded to the metal board by solder, wherein
the cooling chamber includes:
a first board portion bonded to the metal board;
a second board portion facing the first board portion; and
a plurality of zigzag fins arranged between the first board portion and the second board portion,
the plurality of zigzag fins are joined to the first board portion and the second board portion,
a flow path through which a coolant passes is formed by the first board portion, the second board portion, and the plurality of zigzag fins, and
a zigzag pitch of each of the plurality of zigzag fins is greater than or equal to 2 mm and less than or equal to 4 mm.
9. The semiconductor module according to claim 8 , further comprising:
a resin portion that is formed by a hard resin and seals the semiconductor chip and the layered substrate, wherein
a solder bonding surface of the metal board is exposed from the resin portion.
10. The semiconductor module according to claim 8 , wherein
the metal board is formed by a metal layer bonded to the insulating board and a first heat spreader bonded to the metal layer.
11. The semiconductor module according to claim 8 , wherein
the circuit board is formed by a circuit layer bonded to the insulating board and a second heat spreader bonded to the circuit layer.
12. The semiconductor module according to claim 8 , wherein
the plurality of zigzag fins are arranged in parallel between the first board portion and the second board portion, and
the flow path through which the coolant passes is formed between the first board portion and the second board portion in a direction orthogonal to a direction in which the plurality of zigzag fins are arranged in parallel.
13. The semiconductor module according to claim 9 , wherein
the solder bonding surface of the metal board protrudes from a bottom surface of the resin portion.
14. The semiconductor module according to claim 13 , wherein
a thickness of the metal board is greater than or equal to 0.5 mm and less than 1.0 mm.
15. A semiconductor module, comprising:
a layered substrate formed by layering a circuit board, an insulating board, and a metal board;
a semiconductor chip mounted on the circuit board; and
a cooling chamber bonded to the metal board by solder, wherein
the cooling chamber includes:
a first board portion bonded to the metal board;
a second board portion facing the first board portion; and
a plurality of zigzag fins arranged between the first board portion and the second board portion,
the plurality of zigzag fins are joined to the first board portion and the second board portion,
a flow path through which a coolant passes is formed by the first board portion, the second board portion, and the plurality of zigzag fins, and
a zigzag angle of each of the plurality of zigzag fins is greater than or equal to 20° and less than or equal to 35°.
16. The semiconductor module according to claim 15 , further comprising:
a resin portion that is formed by a hard resin and seals the semiconductor chip and the layered substrate, wherein
a solder bonding surface of the metal board is exposed from the resin portion.
17. The semiconductor module according to claim 15 , wherein
the metal board is formed by a metal layer bonded to the insulating board and a first heat spreader bonded to the metal layer.
18. The semiconductor module according to claim 15 , wherein
the circuit board is formed by a circuit layer bonded to the insulating board and a second heat spreader bonded to the circuit layer.
19. The semiconductor module according to claim 15 , wherein
the plurality of zigzag fins are arranged in parallel between the first board portion and the second board portion, and
the flow path through which the coolant passes is formed between the first board portion and the second board portion in a direction orthogonal to a direction in which the plurality of zigzag fins are arranged in parallel.
20. The semiconductor module according to claim 16 , wherein
the solder bonding surface of the metal board protrudes from a bottom surface of the resin portion.
21. The semiconductor module according to claim 20 , wherein
a thickness of the metal board is greater than or equal to 0.5 mm and less than 1.0 mm.
22. A semiconductor module, comprising:
a layered substrate formed by layering a circuit board, an insulating board, and a metal board;
a semiconductor chip mounted on the circuit board; and
a cooling chamber bonded to the metal board by solder, wherein
the cooling chamber includes:
a first board portion bonded to the metal board;
a second board portion facing the first board portion; and
a plurality of zigzag fins arranged between the first board portion and the second board portion,
the plurality of zigzag fins are joined to the first board portion and the second board portion,
a flow path through which a coolant passes is formed by the first board portion, the second board portion, and the plurality of zigzag fins, and
a thickness of the metal board is greater than or equal to 0.6 mm and less than 1.0 mm.
23. The semiconductor module according to claim 22 , further comprising:
a resin portion that is formed by a hard resin and seals the semiconductor chip and the layered substrate, wherein
a solder bonding surface of the metal board is exposed from the resin portion.
24. The semiconductor module according to claim 22 , wherein
the metal board is formed by a metal layer bonded to the insulating board and a first heat spreader bonded to the metal layer.
25. The semiconductor module according to claim 22 , wherein
the circuit board is formed by a circuit layer bonded to the insulating board and a second heat spreader bonded to the circuit layer.
26. The semiconductor module according to claim 22 , wherein
the plurality of zigzag fins are arranged in parallel between the first board portion and the second board portion, and
the flow path through which the coolant passes is formed between the first board portion and the second board portion in a direction orthogonal to a direction in which the plurality of zigzag fins are arranged in parallel.
27. The semiconductor module according to claim 23 , wherein
the solder bonding surface of the metal board protrudes from a bottom surface of the resin portion.