Semiconductor device
A first transistor including a channel formation region, a first gate insulating layer, a first gate electrode, and a first source electrode and a first drain electrode; a second transistor including an oxide semiconductor layer, a second source electrode and a second drain electrode, a second gate insulating layer, and a second gate electrode; and a capacitor including one of the second source electrode and the second drain electrode, the second gate insulating layer, and an electrode provided to overlap with one of the second source electrode and the second drain electrode over the second gate insulating layer are provided. The first gate electrode and one of the second source electrode and the second drain electrode are electrically connected to each other.
1. A semiconductor device comprising:
a memory cell comprising:
a first transistor;
a second transistor; and
a capacitor,
wherein one of a source and a drain of the first transistor is electrically connected to a first wiring,
wherein the other of the source and the drain of the first transistor is electrically connected to a second wiring,
wherein a gate of the first transistor is electrically connected to one of a source and a drain of the second transistor,
wherein the gate of the first transistor is electrically connected to one of electrodes of the capacitor,
wherein the other of the source and the drain of the second transistor is electrically connected to a third wiring,
wherein a first gate of the second transistor is electrically connected to a fourth wiring,
wherein the other of the electrodes of the capacitor is electrically connected to a fifth wiring,
wherein a second gate of the second transistor is electrically connected to a sixth wiring, and
wherein the second transistor comprises an oxide semiconductor layer comprising a channel formation region.
2. The semiconductor device according to claim 1 , wherein the oxide semiconductor layer comprises indium, gallium, and zinc.
3. The semiconductor device according to claim 1 , wherein a channel formation region of the first transistor is formed of a material other than an oxide semiconductor material.
4. The semiconductor device according to claim 1 , wherein a channel formation region of the first transistor is provided in a semiconductor substrate.
5. The semiconductor device according to claim 1 , comprising an insulating layer over the first transistor, wherein the second transistor is provided over the insulating layer.
6. The semiconductor device according to claim 5 , wherein the capacitor is provided over the insulating layer.
7. The semiconductor device according to claim 1 ,
wherein the fourth wiring and the sixth wiring are configured to be supplied with a same potential.
8. The semiconductor device according to claim 1 ,
wherein the fourth wiring and the sixth wiring are configured to be supplied with different potentials from each other.
9. The semiconductor device according to claim 1 , wherein, in the second transistor, the first gate and the second gate face each other with the oxide semiconductor layer comprising the channel formation region interposed between the first gate and the second gate.
10. The semiconductor device according to claim 1 , wherein, in the second transistor, the first gate and the second gate are respectively located over and below the oxide semiconductor layer comprising the channel formation region.
11. A semiconductor device comprising:
a first transistor;
a second transistor; and
a capacitor,
wherein one of a source and a drain of the first transistor is electrically connected to a first wiring,
wherein the other of the source and the drain of the first transistor is electrically connected to a second wiring,
wherein a gate of the first transistor is electrically connected to one of a source and a drain of the second transistor,
wherein the gate of the first transistor is electrically connected to one of electrodes of the capacitor,
wherein the other of the source and the drain of the second transistor is electrically connected to a third wiring,
wherein a first gate of the second transistor is electrically connected to a fourth wiring,
wherein the other of the electrodes of the capacitor is electrically connected to a fifth wiring,
wherein a second gate of the second transistor is electrically connected to a sixth wiring,
wherein the second transistor comprises an oxide semiconductor layer comprising a channel formation region, and
wherein, in the second transistor, the first gate and the second gate face each other with the oxide semiconductor layer comprising the channel formation region interposed between the first gate and the second gate.
12. The semiconductor device according to claim 11 , wherein the oxide semiconductor layer comprises indium, gallium, and zinc.
13. The semiconductor device according to claim 11 , wherein a channel formation region of the first transistor is formed of a material other than an oxide semiconductor material.
14. The semiconductor device according to claim 11 , wherein a channel formation region of the first transistor is provided in a semiconductor substrate.
15. The semiconductor device according to claim 11 , comprising an insulating layer over the first transistor, wherein the second transistor is provided over the insulating layer.
16. The semiconductor device according to claim 15 , wherein the capacitor is provided over the insulating layer.
17. The semiconductor device according to claim 11 , wherein the fourth wiring and the sixth wiring are configured to be supplied with a same potential.
18. The semiconductor device according to claim 11 , wherein the fourth wiring and the sixth wiring are configured to be supplied with potentials different from each other.
19. A semiconductor device comprising:
a first transistor;
a second transistor; and
a capacitor,
wherein one of a source and a drain of the first transistor is electrically connected to a first wiring,
wherein the other of the source and the drain of the first transistor is electrically connected to a second wiring,
wherein a gate of the first transistor is electrically connected to one of a source and a drain of the second transistor,
wherein the gate of the first transistor is electrically connected to one of electrodes of the capacitor,
wherein the other of the source and the drain of the second transistor is electrically connected to a third wiring,
wherein a first gate of the second transistor is electrically connected to a fourth wiring,
wherein the other of the electrodes of the capacitor is electrically connected to a fifth wiring,
wherein a second gate of the second transistor is electrically connected to a sixth wiring,
wherein the second transistor comprises an oxide semiconductor layer comprising a channel formation region, and
wherein, in the second transistor, the first gate and the second gate are respectively located over and below the oxide semiconductor layer comprising the channel formation region.
20. The semiconductor device according to claim 19 , wherein the oxide semiconductor layer comprises indium, gallium, and zinc.
21. The semiconductor device according to claim 19 , wherein a channel formation region of the first transistor is formed of a material other than an oxide semiconductor material.
22. The semiconductor device according to claim 19 , wherein a channel formation region of the first transistor is provided in a semiconductor substrate.
23. The semiconductor device according to claim 19 , comprising an insulating layer over the first transistor, wherein the second transistor is provided over the insulating layer.
24. The semiconductor device according to claim 23 , wherein the capacitor is provided over the insulating layer.
25. The semiconductor device according to claim 19 , wherein the fourth wiring and the sixth wiring are configured to be supplied with a same potential.
26. The semiconductor device according to claim 19 , wherein the fourth wiring and the sixth wiring are configured to be supplied with potentials different from each other.