Method of fabricating memory device
A method of fabricating a memory device, the method including forming a first magnetization layer; forming a tunnel barrier layer on the first magnetization layer; forming a second magnetization layer on the tunnel barrier layer; forming a magnetic tunnel junction (MTJ) structure by patterning the first magnetization layer, the tunnel barrier layer, and the second magnetization layer; and forming a boron oxide in a sidewall of the MTJ structure by implanting boron.
1. A method of fabricating a memory device, the method comprising:
forming a first magnetization layer;
forming a tunnel barrier layer on the first magnetization layer;
forming a second magnetization layer on the tunnel barrier layer;
forming a magnetic tunnel junction (MTJ) structure by patterning the first magnetization layer, the tunnel barrier layer, and the second magnetization layer such that the MTJ includes a first magnetization pattern, a tunnel barrier pattern, and a second magnetization pattern; and
forming a boron oxide in a sidewall of the first magnetization pattern, the tunnel barrier pattern, and the second magnetization pattern of the MTJ structure by implanting boron.
2. The method as claimed in claim 1 , wherein forming the MTJ structure and forming the boron oxide are simultaneously or sequentially performed.
3. The method as claimed in claim 1 , wherein implanting boron includes performing an ion implantation process, a plasma treatment process, or an atomic diffusion process.
4. The method as claimed in claim 1 , wherein the implanting boron includes using boron oxide, a metal boride, a metal boron oxide, boron hydride, boron hydroxide, boron nitride, boron carbide, or triethylborane.
5. The method as claimed in claim 1 , further comprising forming a passivation layer such that the passivation layer surrounds the sidewall of the MTJ structure.
6. The method as claimed in claim 5 , wherein forming boron oxide in the sidewall of the MTJ structure and forming the passivation layer are simultaneously or sequentially performed.
7. The method as claimed in claim 5 , wherein the boron oxide is formed at an interface between the MTJ structure and the passivation layer.
8. The method as claimed in claim 1 , wherein:
the tunnel barrier layer includes a metal oxide, and
the boron oxide is chemically bonded to the tunnel barrier layer.
9. The method as claimed in claim 1 , wherein forming the boron oxide includes removing etching by-products generated during an operation of forming the MTJ structure.
10. The method as claimed in claim 1 , wherein at least one of the first and second magnetization layers include boron.
11. A method of fabricating a memory device, the method comprising:
forming a first magnetization layer, a tunnel barrier layer, and a second magnetization layer on a substrate;
forming an etching mask pattern on the second magnetization layer; and
performing an etching process to form a magnetic tunnel junction (MTJ) structure that includes a first magnetization pattern, a tunnel barrier pattern, and a second magnetization pattern, wherein:
performing the etching process includes forming etching by-products, and
some etching by-products are removed by implanting boron such that the etching by-products react with the boron to form boron oxide on a sidewall of the MTJ structure.
12. The method as claimed in claim 11 , wherein the etching process includes performing a reactive ion etching process or an ion beam etching process.
13. The method as claimed in claim 11 , wherein the etching by-products are conductive materials.
14. The method as claimed in claim 11 , wherein implanting boron prevents a short circuit caused by etching by-products between the first and second magnetization patterns.
15. A method of fabricating a memory device, the method comprising:
forming a first magnetization layer;
forming a tunnel barrier layer on the first magnetization layer;
forming a second magnetization layer on the tunnel barrier layer;
forming a magnetic tunnel junction (MTJ) structure by etching the first magnetization layer, the tunnel barrier layer, and the second magnetization layer such that etching by-products remain on a sidewall of the MTJ structure; and
forming a boron-containing material film on the sidewall of the MTJ structure by reacting boron with the etching by-products.
16. The method as claimed in claim 15 , wherein at least one of the first and second magnetization layers include boron.
17. The method as claimed in claim 15 , wherein the etching by-products are conductive materials.
18. The method as claimed in claim 15 , wherein the boron-containing material film is non-conductive.
19. A memory device fabricated according to the method as claimed in claim 15 .