Sputtering target and method for producing same
View Patent ↗Provided are a sputtering target which has excellent machinability and is capable of forming a compound film that mainly contains Cu and Ga and a method for producing the sputtering target. The sputtering target of the present invention has a component composition that contains 15 to 40 at % of Ga, 0.1 to 5 at % of Bi, and the balance composed of Cu and unavoidable impurities with respect to all metal elements in the sputtering target. The method for producing the sputtering target includes a step of melting at least Cu, Ga and Bi as simple substances or an alloy that contains two or more of these elements at 1,050° C. or higher to produce an ingot.
1. A sputtering target for producing a solar cell having a component composition containing:
15 to 40 at % of Ga;
0.1 to 5 at % of Bi; and
the balance composed of Cu and unavoidable impurities with respect to all metal elements in the sputtering target, wherein
the sputtering target has a Bi-containing phase within crystal grains or at grain boundaries of an alloy phase mainly containing a Cu—Ga alloy,
the Bi-containing phase contains at least one of a Bi simple substance or an intermetallic compound containing 10 at % or greater of Bi,
the sputtering target has a density of 95% or greater, and
the average grain diameter of the Bi-containing phase is from 0.5 μm through 80 μm.
2. The sputtering target according to claim 1 , wherein the intermetallic compound containing 10 at % or greater of Bi contains Cu 5 Bi 2 .
3. The sputtering target according to claim 1 , wherein the average grain diameter of the metal phase in the sputtering target material is 100 μm or less.
4. A sputtering target for producing a solar cell having a component composition containing:
15 to 40 at % of Ga;
0.1 to 5 at % of Bi;
0.05 to 15 at % of Na; and
the balance composed of Cu and unavoidable impurities with respect to all metal elements in the sputtering target, wherein
Na is contained as an NaF compound, an Na 2 S compound, or an Na 2 Se compound, and
the sputtering target has a Bi-containing phase within crystal grains or at grain boundaries of an alloy phase mainly containing a Cu—Ga alloy,
the Bi-containing phase contains at least one of a Bi simple substance or an intermetallic compound containing 10 at % or greater of Bi,
the sputtering target has a density of 95% or greater, and
the average grain diameter of the Bi-containing phase is from 0.5 μm through 80 μm.
5. A method for producing the sputtering target according to claim 1 , the method comprising:
a step of melting at least Cu, Ga and Bi as simple substances or an alloy that contains two or more of these elements at 1,050° C. or higher to produce an ingot.
6. A method for producing the sputtering target according to claim 1 , the method comprising:
a step of producing a starting material powder that is obtained by pulverizing at least Cu, Ga and Bi as simple substances or an alloy that contains two or more of these elements; and
a step of subjecting the starting material powder to hot processing in a vacuum, in an inert atmosphere or in a reducing atmosphere,
wherein Ga contained in the starting material powder is contained in the form of a Cu—Ga alloy or in the form of a Ga—Bi alloy.
7. A method for producing the sputtering target according to claim 4 , the method comprising:
a step of producing a starting material powder that is obtained by preparing at least Cu, Ga and Bi as simple substances or an alloy that contains two or more of these.