Per-pixel performance improvement for combined visible and infrared image sensor arrays

1. A method comprising:

forming an array of photodetectors on a silicon substrate;

treating a subset of the photodetectors to improve sensitivity of material of the photodetector to infrared light without improving sensitivity to visible light; and

finishing the photodetector array to form an image sensor.

2. The method of claim 1 , wherein forming an array comprises forming an array on the back side of the substrate after forming circuitry on the front side of the substrate.

3. The method of claim 1 , wherein treating comprises doping the subset of the photodetectors with at least one of sulfur, selenium, and tellurium.

4. The method of claim 3 , wherein doping comprises forming a mask over the photodetectors that are not of the subset, applying a chemical vapor deposition of chalcogens over the photodetectors that are not masked and applying a thermal anneal to the photodetectors that are not masked.

5. The method of claim 1 , wherein treating comprises irradiating the subset of the photodetectors.

6. The method of claim 5 , wherein irradiating comprises irradiating in the presence of chalcogens to drive chalcogen impurities into the subset of photodetectors.

7. The method of claim 1 , wherein treating comprises causing a silicon surface of the subset of photodetectors to transition to liquid in the presence of chalcogens and then to rapidly solidify with some chalcogen incorporated.

8. The method of claim 1 , further comprising applying a red, a green, or a blue color filter in a repeating pattern over each photodetector that is not treated.

9. The method of claim 1 , further comprising:

applying infrared light color filters over the treated photodetectors; and

applying visible light color filters over the photodetectors that are not treated.

10. The method of claim 1 , wherein treating comprises adding impurities to the subset of the photodetectors without adding impurities to the other photodetectors.

11. The method of claim 10 , wherein the impurities are trapped in a silicon matrix of the subset of the photodetectors.

12. The method of claim 1 , wherein treating comprises reducing the effective silicon band gap of the subset of the photodetectors.

13. A method comprising:

forming an array of photodetectors on a silicon substrate;

forming a mask over photodetectors that are not of a subset of the photodetectors;

applying a chemical vapor deposition of chalcogens over the subset of the photodetectors that are not masked;

applying a thermal anneal to the photodetectors that are not masked to improve sensitivity of the photodetector to infrared light;

removing the mask; and

finishing the photodetector array to form an image sensor.

14. The method of claim 13 , further comprising irradiating the subset of the photodetectors during the chemical vapor deposition to drive chalcogen impurities into the subset of the photodetectors.

15. The method of claim 13 , further comprising:

applying infrared light color filters over the subset of the photodetectors; and

applying visible light color filters over the photodetectors that are not of the subset.

16. A method comprising

forming an array of photodetectors on a silicon substrate;

adding impurities to material of only a subset of the photodetectors to improve sensitivity to infrared light without improving sensitivity to visible light; and

finishing the photodetector array to form an image sensor.

17. The method of claim 16 , wherein adding the impurities comprises trapping the impurities in the silicon matrix of photodetectors of the first array of photodetectors.

18. The method of claim 17 , wherein trapping the impurities comprises causing a silicon surface of the subset of photodetectors to transition to liquid in the presence of chalcogens and then to rapidly solidify with some chalcogen incorporated.

19. The method of claim 16 , further comprising masking the other photodetectors before adding the impurities and removing the mask after adding the impurities.

20. The method of claim 16 , wherein adding the impurities comprises reducing an effective silicon band gap of the subset of the photodetectors as compared to the other photodetectors.