Semiconductor device with transistor cells and enhancement cells with delayed control signals
A semiconductor device includes transistor cells and enhancement cells. Each transistor cell includes a body zone that forms a first pn junction with a drift structure. The transistor cells may form, in the body zones, inversion channels when a first control signal exceeds a first threshold. The inversion channels form part of a connection between the drift structure and a first load electrode. A delay unit generates a second control signal which trailing edge is delayed with respect to a trailing edge of the first control signal. The enhancement cells form inversion layers in the drift structure when the second control signal falls below a second threshold lower than the first threshold. The inversion layers are effective as minority charge carrier emitters.
1. A semiconductor device, comprising:
a transistor cell comprising a body zone forming a first pn junction with a drift structure, the transistor cell configured to form, in the body zone, an inversion channel forming part of a connection between the drift structure and a first load electrode when a first control signal exceeds a first threshold;
a delay unit configured to generate a second control signal which trailing edge is delayed with respect to a trailing edge of the first control signal; and
an enhancement cell configured to form an inversion layer in the drift structure when the second control signal falls below a second threshold lower than the first threshold, wherein the inversion layer is effective as minority charge carrier emitter.
2. The semiconductor device of claim 1 , wherein
the enhancement cell comprises a charge carrier transfer zone forming a further first pn junction with the drift structure.
3. The semiconductor device of claim 2 , wherein
the charge carrier transfer zone directly adjoins the body zone.
4. The semiconductor device of claim 2 , wherein
the charge carrier transfer zone is separated from the body zone.
5. The semiconductor device of claim 2 , wherein
the enhancement cell is configured to form, in the charge carrier transfer zone, a secondary inversion layer electrically disconnected from the first load electrode when the second control signal exceeds the first threshold.
6. The semiconductor device of claim 5 , wherein
the enhancement cell comprises a heavily doped second interruption zone forming a unipolar homojunction with the charge carrier transfer zone and interrupting the secondary inversion layer.
7. The semiconductor device of claim 5 , wherein
the enhancement cell is devoid of any doped zone that both forms a pn junction with the charge carrier transfer zone and that is electrically connected with the first load electrode.
8. The semiconductor device of claim 1 , wherein
the transistor cell comprises a first gate structure to which the first control signal is applied, the transistor cell is configured to form a further inversion layer in the drift structure when the first control signal falls below the second threshold, and at least a portion of the further inversion layer is disconnected from the body zone.
9. The semiconductor device of claim 8 , wherein
the transistor cell comprises a heavily doped first interruption zone along the first gate structure, the first interruption zone forming a unipolar homojunction with the drift structure and disconnecting at least a portion of the further inversion layer from the body zone.
10. The semiconductor device of claim 8 , wherein
the first gate structure comprises a first gate electrode and a first gate dielectric separating the first gate electrode from the body zone and the drift structure, the first gate dielectric comprising a beak portion with increased width, the beak portion disconnecting at least a portion of the further inversion layer from the body zone at a low level of the first control signal.
11. The semiconductor device of claim 10 , wherein
the beak portion extends outwardly from the first gate structure.
12. The semiconductor device of claim 1 , wherein
the transistor cell comprises a first gate structure to which the first control signal is applied, the first gate structure comprises a first gate electrode and a first gate dielectric, a first section of the first gate dielectric separating the first gate electrode from the body zone and a second section of the first gate dielectric separating the first gate electrode from the drift structure, and the second section is thicker than the first section and configured to suppress formation of an inversion layer along the first gate structure in the drift structure at a low level of the first control signal.
13. The semiconductor device of claim 1 , wherein
the transistor cell comprises a first gate structure to which the first control signal is applied, the first gate structure comprises a first gate electrode and a first gate dielectric separating the first gate electrode from the body zone and the drift structure, the enhancement cell comprises a second gate structure to which the second control signal is applied, and the first gate structure overlaps to a lower degree with the drift structure than the second gate structure.
14. The semiconductor device of claim 1 , wherein
the inversion layer of the enhancement cell directly adjoins the body zone of the transistor cell when the second control signal falls below the second threshold.
15. The semiconductor device of claim 14 , wherein
the transistor cell comprises a first gate structure to which the first control signal is applied, the first gate structure comprises a first gate electrode and a first gate dielectric separating the first gate electrode from the body zone, the enhancement cell comprises a second gate structure to which the second control signal is applied, the second gate structure comprises a second gate electrode and a second gate dielectric separating the second gate electrode from the drift structure, and an insulator layer sandwiched between the first gate structure and the second gate structure.
16. The semiconductor device of any of claim 1 , wherein
a plurality of transistor cells and enhancement cells forms a transistor cell array and a population density of at least one of the transistor cells and enhancement cells varies with decreasing distance to an edge of the transistor cell array.
17. The semiconductor device of claim 16 , further comprising
idle cells formed in the transistor cell array.
18. The semiconductor device of claim 1 , wherein
the drift structure comprises a weakly doped drift zone and a heavily doped barrier zone sandwiched between the drift zone and the body zone.
19. The semiconductor device of claim 1 , wherein
the delay unit comprises a first path connected to a gate node and a second path connected to the gate node, the first path outputting the first control signal and the second path outputting the second control signal in response to a signal applied to the gate node, respectively.
20. The semiconductor device of claim 19 , wherein
the first path comprises a first internal resistance and the second path comprises a second internal resistance greater than the first internal resistance.
21. The semiconductor device of claim 20 , wherein
the second path comprises a rectifying element in parallel to the second internal resistance, the rectifying element bypassing the second internal resistance for leading signal edges.
22. A power module, comprising:
a half-bridge circuit comprising two switching elements, wherein at least one of the switching elements comprises
a transistor cell comprising a body zone forming a first pn junction with a drift structure and configured to form, in the body zone, an inversion channel forming part of a connection between the drift structure and a first load electrode when a first control signal exceeds a first threshold;
a delay unit configured to generate a second control signal which trailing edge is delayed with respect to a trailing edge of the first control signal; and
an enhancement cell configured to form an inversion layer in the drift structure when the second control signal falls below a second threshold lower than the first threshold, wherein the inversion layer is effective as minority charge carrier emitter.