IP Library Granted Patent US 9,997,700
Granted Patent B2
US 9,997,700 · App. 14/267,111 · Granted Jun 12, 2018

Deterministic seeding of switching filament in oxide-based memristive devices

Inventors: Mohamed Abdeltawab Abdelmoula (Pittsburgh, PA); Marek Skowronski (Murrysville, PA); Abhishek A. Sharma (Pittsburgh, PA); James A. Bain (Pittsburgh, PA)
Assignee: Carnegie Mellon University
H01L45/085H01L45/1233H01L45/1246H01L45/1253H01L45/146H01L45/165
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,997,700
App. No.
14/267,111
Granted
Jun 12, 2018
Kind
B2
Abstract

A method for manufacturing an RRAM cell includes providing a metal-insulator-metal stack and exposing a subsection of a MIM stack to particle bombardment and/or radiation. Exposing a subsection of the MIM stack to particle bombardment and/or radiation forms localized defects in the functional layer of the MIM stack, thereby reducing the required forming voltage of the RRAM cell and further providing precise control over the location of a conductive filament created in the MIM stack during forming of the device.

Claims (13)

1. A method for manufacturing a resistive random access memory (RRAM) cell comprising:

providing a metal-insulator-metal (MIM) stack comprising a first metal electrode, a second metal electrode, and a functional layer between the first metal electrode and the second metal electrode; and

directing a particle beam only at a subsection of the MIM stack in order to generate only a portion of a conducting filament between the first metal electrode and the second metal electrode in the functional layer, wherein an area of the subsection of the MIM stack is less than 100 nm 2 ; and

completing formation of the conductive filament by applying a forming voltage between the first metal electrode and the second metal electrode.

2. The method of claim 1 wherein the forming voltage is less than or equal to a set/reset voltage required to change a resistance between the first metal electrode and the second metal electrode of the RRAM cell.

3. The method of claim 1 wherein:

the first metal electrode comprises titanium nitride (TiN);

the functional layer comprises titanium oxide (TiO 2 ); and

the second metal electrode comprises platinum (Pt).

4. The method of claim 1 wherein a resistance between the first metal electrode and the second metal electrode is less than 3 MΩ.

5. The method of claim 1 wherein the particle beam is an electron beam.

6. The method of claim 1 wherein the particle beam is an ion beam.

7. The method of claim 1 wherein the particle beam is a photon beam.

Assignments (2)
CONFIRMATORY LICENSE Recorded Dec 29, 2014
From: CARNEGIE-MELLON UNIVERSITY
To: NATIONAL SCIENCE FOUNDATION
Reel/Frame 034594/0765 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 22, 2014
From: ABDELMOULA, MOHAMED ABDELTAWAB; SKOWRONSKI, MAREK; SHARMA, ABHISHEK A.; BAIN, JAMES A.
To: CARNEGIE MELLON UNIVERSITY
Reel/Frame 032945/0653 →
Continuity (1)
Related Publication 20150318472A1 · Nov 5, 2015