Method and switch for automatically cutting off high temperature and high current by using metal-insulator transition (MIT) device
A method of automatically cutting off high temperature and high current, includes calculating an FET voltage applied to an FET (Field Effect Transistor), based on a resistance of a CTS (Critical Temperature Switch) and a reference resistance, comparing the FET voltage with a predetermined threshold voltage, and setting the FET to an ON state when the FET voltage is higher than the threshold voltage and setting the FET to an OFF state when the FET voltage is lower than the threshold voltage. The CTS is a switch including an MIT (Metal-Insulator Transition) device. The MIT device has a metallic property only in a predetermined temperature range.
1. A switch for automatically cutting off high temperature and high current, the switch comprising:
a first cut-off switch; and
a second cut-off switch,
wherein
the first cut-off switch includes
a first CTS (Critical Temperature Switch) including a first MIT (Metal-Insulator Transition) device and having a metallic property only in a first predetermined temperature range,
a first reference resistance for determining, based on a first power source voltage input from a first power source connected in series to a first CTS resistance, a first CTS voltage applied to the first CTS resistance, and
a first FET (Field Effect Transistor) including a first gate and a first source respectively connected to both terminals of the first CTS and configured to perform an ON/OFF operation based on the first CTS voltage and a first predetermined threshold voltage, and
the second cut-off switch includes
a second CTS including a second MIT device and having a metallic property only in a second predetermined temperature range,
a second reference resistance for determining, based on a second power source voltage input from a second power source connected in series to a second CTS resistance, a second CTS voltage applied to the second CTS resistance, and
a second FET including a second gate and a second source respectively connected to both terminals of the second CTS and configured to perform an ON/OFF operation based on the second CTS voltage and a second predetermined threshold voltage,
the first cut-off switch is configured to compare a first FET voltage between the first gate and the first source with the first threshold voltage, and to set the first FET to an ON state when the first FET voltage is higher than the first threshold voltage, and to an OFF state when the first FET voltage is lower than the first threshold voltage, and
the second cut-off switch is configured to compare a second FET voltage between the second gate and the second source with the second threshold voltage, and to set the second FET to an ON state when the second FET voltage is higher than the second threshold voltage, and to an OFF state when the second FET voltage is lower than the second threshold voltage.
2. The switch according to claim 1 , wherein the first CTS is configured to prevent an over-discharge, and the second CTS is configured to prevent an over-charge.
3. The switch according to claim 2 , wherein the first temperature range and the second temperature range differ from each other.
4. The switch according to claim 3 , wherein the first FET voltage is calculated
V
gs
=
V
source
×
R
CTS
R
ref
+
R
CTS
,
〈
Equation
1
〉
where V gs is first FET voltage, V source is first power source voltage, R CTS is first CTS resistance, and R ref is first reference resistance.
5. The switch according to claim 4 , wherein the second FET voltage is calculated by
V
gs
=
V
source
×
R
CTS
R
ref
+
R
CTS
,
〈
Equation
2
〉
where V gs is second FET voltage, V source is second power source voltage, R CTS is second CTS resistance, and R ref is second reference resistance.