GMR spin valve structure using heusler alloy
View Patent ↗A giant magnetoresistive spin valve sensor is provided in which first and second ferromagnetic layers comprise a Heusler alloy. A non-ferromagnetic spacer layer is positioned between the first and second ferromagnetic layers. The non-magnetic spacer layer has an energy band which is similar to the energy bands of the Heusler alloy of the first and second ferromagnetic layers to allow a giant magnetoresistive effect to occur.
1. A giant magnetoresistive spin valve sensor for sensing a magnetic flux, comprising:
a pinning layer;
a first ferromagnetic layer of a first Heusler alloy extending in a first plane adjacent the pinning layer;
a second ferromagnetic layer of a second Heusler alloy extending in a second plane generally parallel with the first plane; and
a non-ferromagnetic spacer layer between the first ferromagnetic layer and the second ferromagnetic layer of a non-ferromagnetic Heusler-like alloy comprising an alloy having a crystal structure of a Heusler alloy without the presence of MN and having an energy band sufficiently similar to energy bands of the first Heusler alloy and the second Heusler alloy to provide asymmetry in majority and minority spin states and selective scatter of electrons at interfaces between the ferromagnetic layers and the non-ferromagnetic spacer layer and thereby allow a giant magnetoresistive effect to occur in the presence of a magnetic field.
2. The apparatus of claim 1 wherein the spacer layer comprises a material having a crystal structure which is the same as a Heusler alloy crystal structure.
3. The apparatus of claim 1 wherein the energy bands are similar near the Fermi energy level.
4. The apparatus of claim 1 wherein the first Heusler alloy comprises Co 2 MnSi.
5. The apparatus of claim 1 wherein the first Heusler alloy comprises Co 2 MnGe.
6. The apparatus of claim 1 wherein the non-ferromagnetic Heusler-like alloy comprises Rh 2 CuSn.
7. The apparatus of claim 1 wherein the non-ferromagnetic Heusler-like alloy comprises Co 2 CuSn.
8. The apparatus of claim 1 wherein the first and second Heusler alloys are the same Heusler alloy.
9. A magnetic storage system including the giant magnetoresistive spin valve sensor of claim 1 .
10. A method for making a giant magnetoresistive spin valve sensor for sensing magnetic flux, comprising:
providing a pinning layer;
providing a first ferromagnetic layer of a first Heusler alloy extending in a first plane adjacent the pinning layer;
providing a second ferromagnetic layer of a second Heusler alloy extending in a second plane generally parallel with the first plane;
providing a non-ferromagnetic spacer layer between the first ferromagnetic layer and the second ferromagnetic layer of a non-ferromagnetic Heusler-like alloy comprising an alloy having a crystal structure of a Heusler alloy without the presence of MN; and
wherein the energy band of the non-ferromagnetic Heusler-like alloy is sufficiently similar to the energy bands of the first Heusler alloy and the second Heusler alloy to provide asymmetry in majority and minority spin states and selective scatter of electrons at interfaces between the ferromagnetic layers and the non-ferromagnetic spacer layer and thereby allow a giant magnetoresistive effect to occur in the presence of a magnetic field.
11. The method of claim 10 including matching the energy bands near the Fermi energy level.
12. The method of claim 10 including matching the crystal structure of the non-ferromagnetic Heusler-like alloy with the crystal structures of the first and second Heusler alloys.
13. The method of claim 10 wherein the first Heusler alloy comprises Co 2 MnSi.
14. The method of claim 10 wherein the first Heusler alloy comprises Co 2 MnGe.
15. The method of claim 10 wherein the non-ferromagnetic Heusler-like alloy comprises Rh 2 CuSn.
16. The method of claim 10 wherein the non-ferromagnetic Heusler-like alloy comprises Co 2 CuSn.
17. A giant magnetoresistive sensor made in accordance with the method of claim 10 .
18. A giant magnetoresistive spin valve sensor for sensing a magnetic flux, comprising:
a first Heusler alloy ferromagnetic layer means for responding to an applied magnetic field;
a pinning means for pinning a magnetic vector of the first ferromagnetic Heusler alloy means;
a second ferromagnetic Heusler alloy means having a magnetic vector for responding to the magnetic field; and
a non-ferromagnetic Heusler-like alloy spacer layer means comprising an alloy having a crystal structure of a Heusler alloy without the presence of MN for providing asymmetry in majority and minority spin states and selective scatter of electrons and thereby promoting a giant magnetoresistive effect in the first and second ferromagnetic Heusler alloy layer means by providing an energy band similar to energy bands of the first and second ferromagnetic Heusler alloy layer means.