Control means for burst access control

1. A control means ( 10 ) for controlling burst accesses to a synchronous dynamic semiconductor memory device ( 3 ) comprising at least two memory banks, having an address converter unit ( 12 ) for converting a logical access address into physical access addresses by splitting the burst access into at least two partial burst accesses, wherein a first physical access address addresses a first memory area of a first memory bank for a first partial burst access and wherein a second physical access address addresses a second memory area of a second memory bank for a second partial burst access, and the first partial burst access and second partial burst access are performed consecutively wherein a second partial burst access is prepared during a first partial burst access.

2. A control means as claimed in claim 1 , characterized in that the control means ( 10 ) is so designed that column addresses of the first and second physical access addresses adjoin one another.

3. A control means as claimed in claim 1 , characterized in that the control means ( 10 ) is so designed that, during a partial burst access to the memory area of a first memory bank addressed by the first physical access address, another partial burst access to a memory area of another memory bank addressed by a further physical access address is prepared.

4. A control means as claimed in claim 1 , characterized in that the address converter unit ( 12 ) is so designed that a burst access of the length N to a logical access address A of a memory bank X is subdivided into a first partial burst access of the length N/2 to a first physical access address B, preferably the access address A, of a first memory bank Y, preferably to memory bank X, and a second partial burst access of the length N/2 to a second physical access address C, preferably the access address A+N/2 of a second memory bank Y+Z, preferably the memory bank X+Z, wherein Z is a whole number not equal to zero, preferably +1 if Y is an even whole number or −1 if Y is an odd whole number.

5. A control means as claimed in claim 1 , characterized in that the address converter unit ( 12 )is so designed that a burst access of the length N to a logical access address A of a memory bank X is subdivided into a first partial burst access of the length N/2 to a first physical access address B of a first memory bank Y and a second partial burst access of the length N/2 to a second physical access address B of a second memory bank Y+Z, wherein Z is a whole number not equal to zero and wherein A is preferably equal to B.

6. A control means as claimed in claim 5 , characterized in that the address converter limit ( 12 ) is designed for conversion of the logical access addresses into physical access addresses by the addition of at least one bit for determining the memory bank.

7. A method of controlling burst accesses to a synchronous dynamic semiconductor memory device ( 3 ) comprising at least two memory banks, wherein a logical access address is converted into physical access addresses by splitting the burst access into at least two partial burst accesses, wherein a first physical access address addresses a first memory area of a first memory bank for a first partial burst access and wherein a second physical access address addresses a second memory area of a second memory bank for a second partial burst access, and the first partial burst access and second partial burst access are performed consecutively wherein a second partial burst access is prepared during a first partial burst access.

8. A video memory arrangement with a control means as claimed in claim 1 , wherein the semiconductor memory device ( 3 ) is provided for storing video data.