IP Library Granted Patent US 6,661,705
Granted Patent Utility
US 6,661,705 · Confirmation No. 3683

LOW VOLTAGE FLASH EEPROM MEMORY CELL WITH IMPROVED DATA RETENTION

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Code Description Pages PDF
2003-10-17 IFEE Issue Fee Payment (PTO-85B) 1 View
2003-01-24 TRNA Transmittal of New Application 3 View
2003-01-24 A.PE Preliminary Amendment 2 View
2003-01-24 SPEC Specification 18 View
2003-01-24 CLM Claims 12 View
2003-01-24 ABST Abstract 1 View
2003-01-24 DRW Drawings-only black and white line drawings 6 View
2003-01-24 OATH Oath or Declaration filed 9 View
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Quick Facts
Patent No.
US 6,661,705
App. No.
10/351,113
Filed
2003-01-24
Granted
2003-12-09
Examiner
HO, HOAI V
Art Unit
2818
PTA
0 days