Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry
View Patent ↗This invention includes methods of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry, and to methods of forming trench isolation in the fabrication of integrated circuitry. In one implementation, a method of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry includes flowing an aluminum containing organic precursor to a chamber containing a semiconductor substrate effective to deposit an aluminum comprising layer over the substrate. An alkoxysilanol is flowed to the substrate comprising the aluminum comprising layer within the chamber effective to deposit a silicon dioxide comprising layer over the substrate. At least one halogen is provided within the chamber during at least one of the aluminum containing organic precursor flowing and the alkoxysilanol flowing under conditions effective to reduce rate of the deposit of the silicon dioxide comprising layer over the substrate than would otherwise occur under identical conditions but for providing the halogen. Other implementations are contemplated.
1. A method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry, comprising:
flowing an aluminum-containing organic precursor to a chamber containing a semiconductor substrate effective to deposit an aluminum-comprising layer over the substrate;
flowing an alkoxysilanol to the substrate comprising the aluminum-comprising layer within the chamber effective to deposit a silicon dioxide-comprising layer over the substrate; and
providing at least one halogen within the chamber during at least one of the aluminum-containing organic precursor flowing and the alkoxysilanol flowing under conditions effective to reduce rate of the deposit of the silicon dioxide-comprising layer over the substrate than would otherwise occur under identical conditions but for providing the at least one halogen.
2. The method of claim 1 wherein the aluminum-containing organic precursor comprises a methyl aluminum.
3. The method of claim 1 wherein the aluminum-comprising layer comprises an aluminum compound.
4. The method of claim 3 wherein the aluminum compound comprises a methyl aluminum.
5. The method of claim 3 wherein the aluminum compound comprises an aluminum oxide.
6. The method of claim 3 wherein the aluminum compound comprises a methyl aluminum oxide.
7. The method of claim 1 wherein the aluminum-comprising layer is no more than 3 monolayers thick.
8. The method of claim 1 wherein the alkoxysilanol comprises tristertbutoxysilanol.
9. The method of claim 1 wherein the alkoxysilanol comprises tristertpentoxysilanol.
10. The method of claim 1 wherein the halogen is provided during the alkoxysilanol flowing.
11. The method of claim 1 wherein the halogen is provided by flowing a halogen-containing precursor to the chamber while flowing the alkoxysilanol.
12. The method of claim 1 wherein the halogen is provided from deposited material on the substrate which contains the halogen.
13. The method of claim 1 wherein the silicon dioxide-comprising layer is formed in a blanketing manner on the substrate.
14. The method of claim 1 wherein the silicon dioxide-comprising layer is selectively formed on some areas of the substrate versus other areas of the substrate.
15. The method of claim 1 wherein said flowing of alkoxysilanol is continuous.
16. The method of claim 1 wherein said flowing of alkoxysilanol is continuous at a substantially constant rate.
17. The method of claim 1 wherein said flowing of alkoxysilanol is pulsed.
18. The method of claim 1 wherein the halogen comprises fluorine.
19. The method of claim 1 wherein the halogen comprises chlorine.
20. The method of claim 1 wherein the halogen comprises bromine.
21. The method of claim 1 wherein the halogen comprises iodine.