Method and apparatus for manufacturing semiconductor device
View Patent ↗Concerning a plurality of wafers which compose one lot, amounts of misalignment between alignment marks of these wafers and alignment patterns transferred on photoresists are measured in advance, and then, a mutual relation between a thickness of an interlayer dielectric film and a value of Wafer Scaling is calculated. When exposure is actually executed, first, an interlayer dielectric film is formed on the alignment marks in a lot and planarized. After that, the thickness of the interlayer dielectric film after planarization is measured. The value of the Wafer Scaling is estimated from an average value of the thicknesses of the interlayer dielectric films in the lot and the above-mentioned mutual relation. Then, photoresists are coated on the interlayer dielectric films in the lot, and the photoresists are exposed while the correction is executed so as to compensate the value of the Wafer Scaling.
1. A method for manufacturing a semiconductor device, comprising the steps of:
measuring a thickness of a film formed on a layer with an alignment mark; and
exposing a photoresist formed on the film, wherein
said step of exposing the photoresist includes a step of controlling a correction of misalignment during exposure based on the thickness of the film.
2. The method for manufacturing a semiconductor device according to claim 1 , wherein
a mutual relation between a thickness of the film and an amount of the misalignment of a pattern transferred on the photoresist by the exposure against the alignment mark is calculated in advance; and
a misalignment is corrected based on the mutual relation in said step of controlling the correction.
3. The method for manufacturing a semiconductor device according to claim 1 , wherein
the film is a film which transmits lights.
4. The method for manufacturing a semiconductor device according to claim 1 , wherein
the film is a silicon oxide film or a silicon nitride film.
5. The method for manufacturing a semiconductor device according to claim 1 , wherein
misalignment of Wafer Scaling is corrected as the correction of misalignment.
6. The method for manufacturing a semiconductor device according to claim 1 , wherein
at least one kind of misalignment selected from a group of Wafer Offset, Wafer Rotation, Chip Rotation, and Chip Magnification is corrected as the correction of the misalignment.
7. A method for manufacturing a semiconductor device, comprising the steps of:
forming a film on a layer with an alignment mark;
coating a photoresist on the film;
exposing the photoresist;
patterning the photoresist by developing the photoresist; and
processing the film using the photoresist as a mask, wherein
said step of exposing the photoresist includes a step of correcting misalignment based on a thickness of the film.
8. The method for manufacturing a semiconductor device according to claim 7 , wherein
a mutual relation between a thickness of the film and an amount of the misalignment of a pattern transferred on the photoresist by the exposure against the alignment mark is calculated in advance,
the method comprises the step of measuring the thickness of the film between said step of forming the film and said step of coating the photoresist, and
said step of exposing the photoresist includes a step of correcting the misalignment based on the mutual relation.
9. The method for manufacturing a semiconductor device according to claim 7 , wherein
the film is a film which transmits lights.
10. The method for manufacturing a semiconductor device according to claim 7 , wherein
the film is a silicon oxide film or a silicon nitride film.
11. The method for manufacturing a semiconductor device according to claim 3 , wherein
misalignment of Wafer Scaling is corrected as the correction of misalignment.
12. The method for manufacturing a semiconductor device according to claim 7 , wherein
at least one kind of misalignment selected from a group of Wafer Offset, Wafer Rotation, Chip Rotation, and Chip Magnification is corrected as the correction of the misalignment.