Method of manufacturing water-repelling film
View Patent ↗A water-repelling film is formed by using a vacuum ultraviolet rays chemical vapor deposition (CVD) system ( 100 ) comprising a vacuum ultraviolet rays generating section ( 102 ), a reaction room ( 106 ), and a window ( 104 ) for separating the reaction room ( 106 ) and the vacuum ultraviolet rays generating section ( 102 ). Plasma having an energy larger than 0 eV but smaller than 10 eV and organic material gas are supplied to the reaction room. A substrate ( 116 ) in the reaction room ( 106 ) is heated to maintain such a temperature as not causing damage on the substrate ( 116 ). Vacuum ultraviolet rays is applied from the vacuum ultraviolet rays generating section ( 102 ) to the inside of the reaction room ( 106 ) through the window ( 104 ).
1. A method of manufacturing a water-repelling film using a vacuum ultraviolet rays chemical vapor deposition (CVD) system comprising a vacuum ultraviolet rays generating section, a reaction room having a supporting stand for supporting a substrate, and a window for separating said reaction room and said vacuum ultraviolet rays generating section, said method comprising the steps of:
supplying plasma from a plasma generator and organic material gas from a gas supplying section to said reaction room, said plasma having an energy larger than 0 eV but smaller than 10 eV;
keeping heat in said substrate by a heat-retaining section provided in said supporting stand such that said substrate keeps a temperature which does not cause any damage on said substrate; and
applying vacuum ultraviolet rays from said vacuum ultraviolet rays generating section to an inside of said reaction room through said window.
2. The method according to claim 1 , wherein said substrate keeps said temperature of as low as any temperature in a range of 25° C. (room temperature) to 100° C. during said step of keeping heat in said substrate by said heat-retaining section.
3. The method according to claim 2 , wherein said organic material gas contains C—H bond therein.
4. The method according to claim 2 , wherein a distance between a surface of said window on a side of said reaction room and said substrate is within a range of 40 mm to 60 mm.
5. The method according to claim 1 , wherein said organic material gas contains C—H bond therein.
6. The method according to claim 1 , wherein a distance between a surface of said window on a side of said reaction room and said substrate is within a range of 40 mm to 60 mm.