Semiconductor device including fuse elements and bonding pad
View Patent ↗A semiconductor device includes a lower-layer substrate, a fuse above the lower-layer substrate and blown by radiation with light, a silicon oxide film on the fuse and on an exposed portion of the surface of the lower-layer substrate, and a silicon nitride film on the silicon oxide film. The portion of the silicon oxide film on the surface of the lower-layer substrate is thicker than the fuse, and the silicon oxide film has an opening opposite the fuse.
1. A semiconductor device including fuse elements electrically opened by irradiation with laser light that melts and thereby cuts the fuse elements, the semiconductor device comprising:
a semiconductor substrate;
a first insulating film supported by said semiconductor substrate;
fuse elements comprising respective portions of an aluminum layer disposed on said first insulating film;
a bonding pad comprising a portion of said aluminum layer disposed on said first insulating film;
a second insulating film covering said fuse elements, said first insulating film between said fuse elements, and part of said bonding pad, said second insulating film having a first hole through which at least part of said bonding pad is exposed; and
a third insulating film covering said second insulating film and having a second hole through which at least part of said bonding pad is exposed, wherein
said third insulating film has planar portions between said fuse elements and ridged portions opposite said fuse elements, and
each of said fuse elements is thinner than the total thickness of said planar portions of said third insulating film and said second insulating film at locations between said fuse elements.
2. The semiconductor device according to claim 1 , wherein said second insulating film is a silicon oxide film.
3. The semiconductor device according to claim 2 , wherein said third insulating film is a silicon oxide film.
4. A semiconductor device including fuse elements electrically opened by irradiation with laser light that melts and thereby cuts the fuse elements, the semiconductor device comprising:
a semiconductor substrate;
a first insulating film supported by said semiconductor substrate;
fuse elements comprising respective portions of an aluminum layer disposed on said first insulating film;
a bonding pad comprising a portion of said aluminum layer disposed on said first insulating film;
a second insulating film covering said fuse elements, said first insulating film between said fuse elements, and part of said bonding pad, said second insulating film having a first hole through which at least part of said bonding pad is exposed; and
a third insulating film covering said second insulating film and having a second hole through which at least part of said bonding pad is exposed, wherein each of said fuse elements is thinner than the total thickness of said third insulating film and said second insulating film at locations between one of said fuse elements and said bonding pad.
5. The semiconductor device according to claim 4 , wherein said second insulating film is a silicon oxide film.
6. The semiconductor device according to claim 5 , wherein said third insulating film includes a nitride film.
7. The semiconductor device according to claim 4 , wherein
said third insulating has a third hole through which a region of said second insulating film is exposed,
said fuse elements are located below the region of said second insulating film exposed by the third hole,
said second insulating film includes planar portions between said fuse elements, and ridged portions opposite said fuse elements, and
each of said fuse elements is thinner than the thickness of said planar portions of said second insulating film.