Resin molded type semiconductor device and a method of manufacturing the same
View Patent ↗A resin molded type semiconductor device has: a semiconductor chip ( 12 ) which is mounted on a die pad portion ( 11 ) of a lead frame ( 9 ); thin metal wires ( 14 ) which connect terminals of the semiconductor chip ( 12 ) to inner lead portions ( 13 ) of the lead frame ( 9 ); and a sealing resin ( 15 ), and the lead frame ( 9 ) is subjected to an upsetting process so that a supporting portion ( 11 ) is located at a position higher than the inner lead portions ( 13 ). Since the sealing resin of a thickness corresponding to the step difference of the upsetting exists below the supporting portion, the adhesiveness between the lead frame and the sealing resin can be improved, and high reliability and thinning are realized. Since at least one groove portion is disposed in the surface of each of the inner lead portions ( 13 ), the anchoring effect to the sealing resin ( 15 ), stress acting on a lead portion of a product, and stress to the thin metal wires ( 14 ) can be relaxed, and leads and the thin metal wires can be prevented from peeling off.
1. A resin molded type semiconductor device comprising: a semiconductor chip which is mounted on a die pad of a lead frame; thin metal wires which electrically connect terminals of an upper face of said semiconductor chip to inner lead portions of said lead frame; a sealing resin which seals an outer peripheral region of said semiconductor chip, said region including a thin metal wire region of the upper face of said semiconductor chip; and outer lead portions which are arranged in a bottom face region of said sealing resin and which are formed to be continuous to respective inner lead portions, wherein at least one groove portion is formed in a surface of each of said inner lead portions, a connecting portion of each of said thin metal wires is coupled to a respective inner lead portion at a flat surface region of said respective inner lead portion adjacent said at least one groove portion.
2. A resin molded type semiconductor device according to claim 1 , wherein exposed faces of said outer lead portion are arranged in a same level as an outer face of said sealing resin.
3. A resin molded type semiconductor device comprising:
a die pad; and
leads including inner lead portions and outer lead portions, each of said inner lead portions including at least one groove portion which is formed in a surface thereof;
a semiconductor chip mounted over said die pad;
thin metal wires which electrically connect terminals of said semiconductor chip to said inner lead portions at a position not on said groove portion; and
a sealing resin which seals said groove portion, an outer peripheral region of said semiconductor chip, an entire upper region of said inner lead portions and parts of said inner lead portions whore said thin metal wires are electrically connected, said outer peripheral region including a region of said thin metal wires,
wherein said sealing resin leaves an entire bottom surface of said inner lead portions unsealed.
4. The resin molded type semiconductor device according to claim 3 , wherein each of said inner lead portions includes said at least one groove portion which is formed in an upper surface of said inner lead portions.
5. The rosin molded semiconductor device according to claim 4 , wherein said die pad is disposed higher than said upper surface of said inner lead portions, and said sealing resin seals a lower region of said die pad.
6. The resin molded type semiconductor device according to claim 5 , wherein a bottom surface of said die pad is disposed higher than a bottom surface of said inner lead portions.
7. The resin molded type semiconductor device according to claim 6 , wherein at least a portion of said outer periphery of said semiconductor chip extends outward from said outer periphery of said die pad.
8. The resin molded type semiconductor device according to claim 7 , wherein said groove portion absorbs stress at a connection between said thin metal wires and said inner lead portions.
9. A resin molded type semiconductor device according to claim 8 , wherein a total thickness is not greater than a sum of a thickness of said semiconductor chip and 1 mm.
10. The resin molded type semiconductor device according to claim 8 , wherein exposed faces of said outer lead portions are substantially arranged in a same plane as an outer surface of said sealing resin.
11. A resin molded type semiconductor device comprising:
a die pad; and
leads each including at least one groove portion which is formed in a surface thereof;
a semiconductor chip mounted over said die pad;
thin metal wires which electrically connect terminals of said semiconductor chip to said leads at a position not on said groove portion; and
a sealing resin which seals said groove portion, said thin metal wires, said semiconductor chip, an upper region of said leads and parts of said leads where said thin metal wires are electrically connected,
wherein said sealing resin leaves an entire bottom surface of said leads unsealed.
12. The resin molded type semiconductor device according to claim 11 , wherein each of said leads includes said at least one groove portion which is formed in an upper surface of said leads.
13. The resin molded type semiconductor device according to claim 12 , wherein said die pad is disposed higher than said upper surface of said leads.
14. The resin molded type semiconductor device according to claim 13 , wherein a bottom surface of said die pad is disposed higher than a bottom surface of said leads.
15. The resin molded type semiconductor device according to claim 14 , wherein at least a portion of said outer periphery of said semiconductor chip extends outward from said outer periphery of said die pad.
16. The resin molded type semiconductor device according to claim 15 , wherein said groove portion absorbs stress at a connection between said thin metal wires and said leads.
17. A resin molded type semiconductor device according to claim 16 , wherein a total thickness is not greater than a sum of a thickness of said semiconductor chip and 1 mm.
18. The resin molded type semiconductor device according to claim 8 , wherein exposed faces of said leads are substantially arranged in a same plane as an outer surface of said sealing resin.
19. A resin molded type semiconductor device comprising
a die pad;
leads including inner lead portions and outer lead portions, each of said inner lead portions including at least one groove portion which is formed in a surface thereof;
a semiconductor chip mounted over said die pad;
thin metal wires which electrically connect terminals of said semiconductor chip to said inner lead portions at a position not on said groove portion; and
a sealing resin which seals said groove portion, an outer peripheral region of said semiconductor chip, the entire top surface of said inner lead portions and parts of said inner lead portions where said thin metal wires are electrically connected, said outer peripheral region including a region of said thin metal wires,
wherein said sealing resin leaves unsealed at least the bottom surface of a part of said inner lead portions where said groove portion is formed.
20. The resin molded type semiconductor device according to claim 19 , wherein each of said inner lead portions includes said at least one groove portion which is formed in an upper surface of said inner lead portions.
21. The resin molded type semiconductor device according to claim 20 , wherein said die pad is disposed higher than said upper surface of said inner lead portions, and said sealing resin seals a lower region of said die pad.
22. The resin molded type semiconductor device according to claim 21 , wherein a bottom surface of said die pad is disposed higher than a bottom surface of said inner lead portions.
23. The resin molded type semiconductor device according to claim 22 , wherein at least a portion of said outer periphery of said semiconductor chip extends outward from said outer periphery of said die pad.
24. The resin molded type semiconductor device according to claim 23 , wherein said groove portion absorbs stress at a connection between said thin metal wires and said inner lead portions.
25. A resin molded type semiconductor device according to claim 24 , wherein a total thickness is not greater than a sum of a thickness of said semiconductor chip and 1 mm.
26. The resin molded type semiconductor device according to claim 24 , wherein exposed faces of said outer lead portions are substantially arranged in a same plane as an outer surface of said sealing resin.
27. A resin molded type semiconductor device comprising:
a die pad;
lead each including at least one groove portion which is formed in a surface thereof;
a semiconductor chip mounted over said die pad;
thin metal wires which electrically connect terminals of said semiconductor chip to said leads at a position not on said groove portion; and
a sealing resin which seals said groove portion, said thin metal wires, said semiconductor chip, a top surface of said leads and parts of said leads where said thin metal wires are electrically connected,
wherein said sealing resin leaves unsealed at least the bottom surface of a part of said leads where said groove portion is formed.
28. The resin molded type semiconductor device according to claim 27 , wherein each of said leads includes said at least one groove portion which is formed in an upper surface of said leads.
29. The resin molded type semiconductor device according to claim 28 , wherein said die pad is disposed higher than said upper surface of said leads.
30. The rosin molded type semiconductor device according to claim 29 , wherein a bottom surface of said die pad is disposed higher than a bottom surface of said leads.
31. The resin molded type semiconductor device according to claim 30 , wherein at least a portion of said outer periphery of said semiconductor chip extends outward from said outer periphery of said die pad.
32. The resin molded type semiconductor device according to claim 31 , wherein said groove portion absorbs stress at a connection between said thin metal wires and said leads.
33. A resin molded type semiconductor device according to claim 32 , wherein a total thickness is not greater than a sum of a thickness of said semiconductor chip and 1 mm.
34. The resin molded type semiconductor device according to claim 32 , wherein exposed faces of said leads are substantially arranged in a same plane as an outer surface of said sealing resin.