Semiconductor device having a shielding layer
View Patent ↗The semiconductor device includes a multilevel interconnection formed on a semiconductor substrate. The multilevel interconnection includes a plurality of wiring layers each of which is insulated by an insulating layer. A metal member is formed as a shielding film in a same plane as a wiring layer. As a result, the shielding layer can be formed without increasing the number of process steps.
1. A semiconductor device comprising:
a semiconductor chip which includes a circuit element, a first wiring and an electrode pad, wherein the circuit element includes an electronic element, and wherein the first wiring is electrically connected between the circuit element to the electrode pad;
an insulating layer formed on the semiconductor chip, wherein the insulating layer has an opening which is aligned over the electrode pad;
an external terminal formed on the insulating layer;
a second wiring formed on the insulating layer, wherein the second wiring electrically connects the electrode pad to the external terminal via the opening; and
a shielding film located in a same plane as the first wiring and interposed between the electronic element and the second wiring,
wherein the electronic element includes a capacitor, and wherein the shielding film completely overlaps the capacitor.
2. The semiconductor device according to claim 1 , wherein the circuit element comprises a voltage controlled oscillator which includes the capacitor.
3. The semiconductor device according to claim 2 , wherein the voltage controlled oscillator generates a signal having a frequency of at least 300 MHz.
4. A semiconductor device comprising:
a semiconductor chip which includes a circuit element, a first wiring and an electrode pad, wherein the circuit element includes an electronic element, and wherein the first wiring is electrically connected between the circuit element to the electrode pad;
an insulating layer formed on the semiconductor chip, wherein the insulating layer has an opening which is aligned over the electrode pad;
an external terminal formed on the insulating layer;
a second wiring formed on the insulating layer, wherein the second wiring electrically connects the electrode pad to the external terminal via the opening; and
a shielding film located in a same plane as the first wiring and interposed between the electronic element and the second wiring,
wherein the shielding film is a metal and is connected to a ground voltage.
5. A semiconductor device composing:
a semiconductor chip which includes a circuit element, a first wiring and an electrode pad, wherein the circuit element includes an electronic element, and wherein the first wiring is electrically connected between the circuit element to the electrode pad;
an insulating layer formed on the semiconductor chip, wherein the insulating layer has an opening which is aligned over the electrode pad;
an external terminal formed on the insulating layer;
a second wiring formed on the insulating layer, wherein the second wiring electrically connects the electrode pad to the external terminal via the opening; and
a shielding film located in a same plane as the first wiring and interposed between the electronic element and the second wiring,
wherein the electrode pad is located in a peripheral region of the semiconductor device, and wherein the external terminal is located in a central region of the semiconductor device.
6. A semiconductor device comprising:
a semiconductor chip;
a first inductor formed on the semiconductor chip;
a first insulating layer formed on the semiconductor chip and the first inductor;
a first shielding film formed on the first insulating layer;
a second insulating layer formed on the first insulating layer and the first shielding film;
a second shielding film formed on the second insulating layer;
a third insulating layer formed on the second insulating layer and the second shielding film; and
a second inductor and an external terminal formed on the third insulating layer;
wherein the first inductor is located under the first shielding film and the second shielding film is located under the second inductor.
7. The semiconductor device according to claim 6 , wherein the first shielding film and the second shielding film are a magnetic material.