IP Library Granted Patent US 7,000,473
Granted Patent B2
US 7,000,473 · App. 10/828,042 · Granted Feb 21, 2006

MEM structure having reduced spring stiction

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Quick Facts
Patent No.
US 7,000,473
App. No.
10/828,042
Granted
Feb 21, 2006
Kind
B2
Abstract

A micro-electromechanical (MEM) device has a folded tether spring in which each fold of the spring is surrounded by a rigidly fixed inner structure and outer structure. The fixed inner structure increases restoring force of the spring. The rigidly fixed inner and outer structures each have a major surface that include a plurality of notches of fixed width relative to a distance between the major surface and the spring. Additionally in one form extensions from the major surface of the rigidly fixed inner and outer structures are provided at distal ends thereof to make initial contact with the spring. The notches of the MEM device both reduce surface area contact with the spring and wick moisture away from the spring to minimize stiction.

Claims (58)

1. A micro-electromechanical (MEM) structure comprising:

a proof mass movable with respect to a substrate;

a spring anchor rigidly coupled to the substrate;

a tether spring comprising a first portion and a second portion in a folded configuration, the proof mass physically coupled to the spring anchor via the tether spring, wherein the tether spring includes a wall with a height; and

a first structure rigidly coupled to the substrate and comprising at least a portion located between the first portion and second portion of the tether spring, the first structure including a first major surface facing the wall of the tether spring, wherein the first major surface includes a plurality of notches.

2. The MEM structure of claim 1 wherein:

the wall is located on the first portion;

the second portion includes a second wall, and

the first structure includes a second major surface, the second major surface including a second plurality of notches, the second major surface facing the second wall, each notch of the first plurality of notches being substantially aligned with a corresponding notch of the second plurality of notches.

3. The MEM structure of claim 2 wherein:

the first portion further includes a third wall located on the first portion, the third wall being on an opposite side of the wall that faces the first structure; and

the MEM structure further includes a third major surface of a structure rigidly coupled to the substrate, the third major surface facing the third wall, the third major surface including a third plurality of notches.

4. The MEM structure of claim 3 wherein:

the second portion includes a fourth wall on an opposite side of the second portion from the second wall; and

the MEM structure further includes a fourth major surface of a structure rigidly coupled to the substrate, the fourth major surface facing the fourth wall, the fourth major surface including a fourth plurality of notches.

5. The MEM structure of claim 2 wherein the first major surface and the second major surface are generally parallel to each other.

6. The MEM structure of claim 1 wherein:

the wall is located on a side of a portion of the tether spring;

the portion of the tether spring includes a second wall on an opposite side of the wall; and

the MEM structure further includes a second major surface of a structure rigidly coupled to the substrate, the second major surface facing the second wall, the second major surface including a second plurality of notches.

7. The MEM structure of claim 1 wherein the proof mass, the tether spring, and the first structure are each made of a first material.

8. The MEM structure of claim 7 wherein the first material includes epitaxial silicon.

9. The MEM structure of claim 1 wherein the plurality of notches are located in a first direction along the first major surface spaced apart at generally a first interval.

10. The MEM structure of claim 9 wherein the first major surface extends in the first direction a first distance, wherein the plurality of notches occupy at least a majority of the first distance of the first major surface.

11. The MEM structure of claim 1 wherein each notch of the plurality of notches is spaced along the first major surface in a first direction and separated by at least a first distance from an adjacent notch of the plurality of notches, wherein each of the plurality of notches has a width in the first direction that is equal to or less than the first distance.

12. The MEM structure of claim 1 wherein the first major surface is located at a first distance from the wall while the tether spring is in a zero force position, wherein each notch of the plurality of notches has a width generally equal to or less than the first distance.

13. The MEM structure of claim 1 wherein the first structure includes an extension extending from the first major surface towards the wall.

14. The MEM structure of claim 13 wherein:

the tether spring includes a first portion and a second portion in a folded configuration, the tether spring also includes a folded end portion connecting the first portion and the second portion at a distal end of the tether spring; and

the extension is located in relative proximity to the distal end.

15. The MEM structure of claim 13 wherein:

each notch of the plurality of notches has a depth from the first major surface;

the extension extends out to a second distance from the first major surface; and

the second distance is less than the depth of each notch of the plurality of notches.

16. The MEM structure of claim 1 wherein each notch of the plurality of notches has a width generally equal to or less than two microns.

17. The MEM structure of claim 1 wherein the first structure is rigidly coupled to the substrate by an anchor centrally positioned within the first structure and which extends substantially a length of the first structure.

18. The MEM structure of claim 1 wherein the tether spring is characterized as having a large height relative to size of gaps between the tether spring and the first structure.

19. A micro-electromechanical (MEM) structure comprising:

a proof mass movable with respect to a substrate;

a spring anchor rigidly coupled to the substrate;

a tether spring, the proof mass physically coupled to the spring anchor via the tether spring, wherein the tether spring includes a first portion and a second portion in a folded configuration; and

a first structure rigidly coupled to the substrate, the first structure includes at least a portion located between the first portion and the second portion, the first structure including a first major surface facing a first wall of the first portion, the first structure including a second major surface facing a second wall of the second portion, the first major surface comprises a first plurality of notches, the second major surface comprises a second plurality of notches.

20. The MEM structure of claim 19 wherein:

the first structure comprises a first extension extending from the first major surface towards the first wall of the first portion; and

the first structure comprises a second extension extending from the second major surface towards the second wall of the second portion.

21. The MEM structure of claim 19 wherein:

the first major surface is located at a first distance from the first wall while the spring is in a zero force position, wherein each notch of the first plurality of notches has a width substantially equal to or less than the first distance; and

the second major surface is located at a second distance from the second wall while the tether spring is in a zero force position, wherein each notch of the second plurality of notches has a width substantially equal to or less than the second distance.

22. The MEM structure of claim 19 wherein:

each notch of the first plurality of notches is spaced along the first wall and separated by at least a first distance from an adjacent notch of the first plurality of notches, and each notch of the first plurality of notches has a lateral width that is equal to or less than the first distance.

23. A micro-electromechanical (MEM) structure comprising:

a proof mass located above a substrate and movable with respect to the substrate;

a spring anchor located above the substrate and rigidly coupled to the substrate;

a tether spring integrally formed with the proof mass, the proof mass physically coupled to the spring anchor via the tether spring, the tether spring comprising an elongated portion having a vertical wall; and

a first structure rigidly coupled to the substrate, the first structure including a first major vertical surface facing the vertical wall of the tether spring, wherein the first major vertical surface includes a plurality of vertically oriented notches, each notch of the plurality of vertically oriented notches is laterally spaced along the vertical wall and separated by at least a first distance from an adjacent notch of the plurality of vertically oriented notches, wherein each notch of the plurality of vertically oriented notches has a lateral width that is equal to or less than the first distance, the first structure including a first extension laterally extending from the first major vertical surface towards the vertical wall.

24. The MEM structure of claim 23 wherein:

the vertical wall is laterally located a second distance from the first major vertical surface when the tether spring is in a zero force position; and

wherein the lateral width of each notch of the plurality of vertical oriented notches is less than the second distance.

Assignments (19)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 4, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NORTH STAR INNOVATIONS INC.
Reel/Frame 037694/0264 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037518/0292 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037486/0517 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037354/0225 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0143 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0553 →
SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 031591/0266 →
SECURITY AGREEMENT Recorded Jun 18, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 030633/0424 →
SECURITY AGREEMENT Recorded May 13, 2010
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 024397/0001 →
SECURITY AGREEMENT Recorded Feb 2, 2007
From: FREESCALE SEMICONDUCTOR, INC.; FREESCALE ACQUISITION CORPORATION; FREESCALE ACQUISITION HOLDINGS CORP.; FREESCALE HOLDINGS (BERMUDA) III, LTD.
To: CITIBANK, N.A. AS COLLATERAL AGENT
Reel/Frame 018855/0129 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 15, 2005
From: MOTOROLA, INC.
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 015735/0156 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 20, 2004
From: VANDEMEER, JAN E.; GOGOI, BISHNU P.; HAMMOND, JONATHAN H.
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 015311/0292 →