Temperature-compensated circuit for power amplifier using diode voltage control
View Patent ↗Provided is a temperature-compensated circuit for a power amplifier through diode voltage control, in which a first resistor (Rref), a first diode (D 1 ), and a second diode (D 2 ) are connected to a reference voltage in series. The temperature-compensated circuit includes a second resistor (R 1 ) connected to the reference voltage, a third resistor (R 2 ) connected to the second resistor in series, a fourth resistor (Rc) having one terminal connected to the reference voltage, a fifth resistor (Re) having one terminal connected to ground, a bias transistor having a base terminal connected to a contact point (VS) between the second resistor and the third resistor, a collector terminal connected to the other terminal of the fourth resistor, and an emitter terminal connected to the other terminal of the fifth resistor, and a sixth resistor (Rf) connected between a series connection terminal between the first diode and the second diode, and the collector terminal of the bias transistor. The voltage of the collector terminal changes for compensation of a temperature.
1. A temperature-compensated circuit for a power amplifier through diode voltage control comprising a first resistor (Rref), a first diode (D 1 ), and a second diode (D 2 ) are connected to reference voltage in series;
a second resistor (R 1 ) connected to the reference voltage;
a third resistor (R 2 ) connected to the second resistor in series;
a fourth resistor (Rc) having one terminal connected to the reference voltage;
a fifth resistor (Re) having one terminal connected to ground;
a bias transistor having a base terminal connected to a contact point (VS) between the second resistor and the third resistor, a collector terminal connected to the other terminal of the fourth resistor, and an emitter terminal connected to the other terminal of the fifth resistor; and
a sixth resistor (Rf) connected between a series connection terminal between the first diode and the second diode, and the collector terminal of the bias transistor,
wherein the voltage of the collector terminal changes for compensation of a temperature.
2. The temperature-compensated circuit of claim 1 , wherein the voltage of the collector terminal is determined by a voltage of a contact point between the second resistor and the third resistor.
3. The temperature-compensated circuit of claim 1 , wherein the voltage of the collector terminal is changed by a value of the fourth resistor.
4. A temperature-compensated circuit for a power amplifier through diode voltage control comprises a first resistor (Rref), a first diode (D 1 ), and a second diode (D 2 ) are connected to a reference voltage in series;
a third diode (D 3 ) connected to the reference voltage;
a second resistor (R 1 ) connected to the third diode;
a third resistor (R 2 ) connected to the second resistor in series;
a fourth resistor (Rc) having one terminal connected to the reference voltage;
a fifth resistor (Re) having one terminal connected to ground;
a bias transistor having a base terminal connected to a contact point (VS) between the second resistor and the third resistor, a collector terminal connected to the other terminal of the fourth resistor, and an emitter terminal connected to the other terminal of the fifth resistor; and
a sixth resistor (Rf) connected between a series connection terminal between the first diode and the second diode, and the collector terminal of the bias transistor,
wherein the voltage of the collector terminal changes for compensation of a temperature.
5. The temperature-compensated circuit of claim 4 , wherein the voltage of the collector terminal is determined by a voltage of a contact point between the second resistor and the third resistor.
6. The temperature-compensated circuit of claim 4 , wherein the voltage of the collector terminal is changed by a value of the fourth resistor.
7. A temperature-compensated circuit for a power amplifier through diode voltage control comprising a first resistor (Rref), a first diode (D 1 ), and a second diode (D 2 ) are connected to a reference voltage in series;
a second resistor (R 1 ) connected to the reference voltage;
a third resistor (R 2 ) connected to the second resistor in series;
a fourth resistor (Rc 1 ) having one terminal connected to the reference voltage;
a fifth resistor (Rc 2 ) connected to the fourth resistor in series;
a sixth resistor (Re) having one terminal connected to ground;
a bias transistor having a base terminal connected to a contact point (VS) between the second resistor and the third resistor, a collector terminal connected to the fifth resistor, and an emitter terminal connected to the other terminal of the sixth resistor; and
a seventh resistor (RF) connected between a series connection terminal between the first diode and the second diode, and a series connection terminal between the fourth resistor and the fifth resistor,
wherein the voltage of the collector terminal changes for compensation of a temperature.
8. The temperature-compensated circuit of claim 7 , wherein the voltage of the collector terminal is determined by a voltage of a contact point between the second resistor and the third resistor.
9. The temperature-compensated circuit of claim 7 , wherein the voltage of the collector terminal is changed by a value of the fourth resistor.
10. The temperature-compensated circuit of claim 7 , wherein the voltage of the collector terminal is changed by a ratio between the fourth resistor and the fifth resistor.
11. A temperature-compensated circuit for a power amplifier through diode voltage control comprising a first resistor (Rref), a first diode (D 1 ), and a second diode (D 2 ) are connected to a reference voltage in series;
a third diode (D 3 ) connected to the reference voltage;
a second resistor (R 1 ) connected to the third diode;
a third resistor (R 2 ) connected to the second resistor in series;
a fourth resistor (Rc 1 ) having one terminal connected to the reference voltage;
a fifth resistor (Rc 2 ) connected to the fourth resistor in series;
a sixth resistor (Re) having one terminal connected to ground;
a bias transistor having a base terminal connected to a contact point (VS) between the second resistor and the third resistor, a collector terminal connected to the fifth resistor (Rc 2 ), and an emitter terminal connected to the other terminal of the sixth resistor; and
a seventh resistor (Rf) connected between a series connection terminal between the first diode and the second diode, and a series connection terminal between the fourth resistor and the fifth resistor,
wherein the voltage of the collector terminal changes for compensation of a temperature.
12. The temperature-compensated circuit of claim 11 , wherein the voltage of the collector terminal is determined by a voltage of a contact point between the second resistor and the third resistor.
13. The temperature-compensated circuit of claim 11 , wherein the voltage of the collector terminal is changed by a value of the fourth resistor.
14. The temperature-compensated circuit of claim 11 , wherein the voltage of the collector terminal is changed by a ratio between the fourth resistor and the fifth resistor.