Semiconductor device having a bond pad and method therefor
A bond pad ( 10 ) has a probe region ( 14 ) and a wire bond region ( 12 ) that are substantially non-overlapping. In one embodiment, the bond pad ( 10 ) is connected to a final metal layer pad ( 16 ) and extends over an interconnect region ( 24 ). The bond pad ( 10 ) is formed from aluminum and the final metal layer pad ( 16 ) is formed from copper. Separating the probe region ( 14 ) from the wire bond region ( 12 ) prevents the final metal layer pad ( 16 ) from being damaged by probe testing, allowing for more reliable wire bonds. In another embodiment, the probe region ( 14 ) extends over a passivation layer ( 18 ). In an application requiring very fine pitch between bond pads, the probe regions ( 14 ) and wire bond regions ( 12 ) of a plurality of bond pads formed in a line may be staggered to increase the distance between the probe regions ( 14 ). In addition, forming the bond pads ( 10 ) over the interconnect region ( 24 ) reduces the size of the integrated circuit.
1. An integrated circuit, comprising:
a substrate having active circuitry;
a plurality of layers of interconnect over the substrate;
a final layer of interconnect over the plurality of layers of interconnect having a plurality of final layer pads around a perimeter of the substrate and having a plurality of interconnect lines;
a layer of passivation over the final layer of interconnect having a plurality openings, wherein each of the plurality of openings corresponds to a final layer pad of the plurality of final layer pads and each of the plurality of openings is over the final layer pad to which it corresponds; and
a plurality of bond pads, wherein each bond pad of the plurality of bond pads corresponds to an opening of the plurality of openings, each bond pad is over the opening to which it corresponds, each bond pad has a first region and a second region, wherein the first region of each bond pad is closer to the perimeter of the substrate than the second region of each bond pad, and wherein first regions of adjacent bond pads alternate between probe regions and wire bond regions, and wherein the probe regions of each of the plurality of bond pads are formed entirely over the layer of passivation.
2. The integrated circuit 1 , wherein the first region and second region of each bond pad is one of the probe region and the wire bond region.
3. The integrated circuit of claim 2 , wherein a distance between centers of probe regions of the adjacent bond pads is greater than between centers of the adjacent bond pads.
4. The integrated circuit of claim 2 , wherein second regions of the adjacent bond pads alternate between wire bond regions and probe regions.
5. The integrated circuit of claim 4 , wherein each of the plurality of openings has a first width and each of the plurality of bond pads extend over the surface of the passivation past the opening to which it corresponds in at least one direction by an amount greater than the first width.
6. The integrated circuit of claim 5 , wherein each of the plurality of bond pads extends over the active circuitry.
7. The integrated circuit of claim 1 further comprising a wire bond attached to a portion of the wire bond region.
8. A method of forming an integrated circuit comprising:
providing a substrate having active circuitry;
forming a plurality of layers of interconnect over the substrate;
forming a final layer of interconnect over the plurality of layers of interconnect having a plurality of final layer pads around a perimeter of the substrate and having a plurality of interconnect lines;
forming a layer of passivation over the final layer of interconnect having a plurality openings, wherein each of the plurality of openings corresponds to a final layer pad of the plurality of final layer pads and each of the plurality of openings is over the final layer pad to which it corresponds; and
forming a plurality of bond pads coupled to the final layer pads through the openings, wherein each bond pad of the plurality of bond pads:
corresponds to an opening of the plurality of openings;
has a first region and a second region that are substantially non-overlapping, wherein the first region of each bond pad is closer to the perimeter of the substrate than the second region of each bond pad, wherein first regions of adjacent bond pads alternate between probe regions and wire bond regions, wherein the probe regions are formed entirely over the passivation layer, and wherein the plurality of bond pads are formed directly over active circuitry and the plurality of layers of interconnect.
9. A method of forming an integrated circuit having:
a substrate having active circuitry and a perimeter;
a plurality of layers of interconnect over the substrate;
a final layer of interconnect over the plurality of layers of interconnect having a first final layer pad, a second final layer pad, and a plurality of interconnect lines;
a layer of passivation over the final layer of interconnect having a first opening over the first final layer pad and a second opening over the second final layer pad;
a first bond pad over and electrically contacting the first final layer pad having a first region and a second region, wherein the first region is closer to the perimeter than the second region, the first and second regions are substantially non-overlapping, the first bond pad formed over the active circuitry and the plurality of layers of interconnect, the first and second regions for providing one of either a wire bond region or a probe region, and the probe region is formed entirely over the layer of passivation; and
a second bond pad over and electrically contacting the second final layer pad having a first region and a second region, wherein the first region is closer to the perimeter than the second region, and the first and second regions are substantially non-overlapping, the second bond pad formed over the active circuit and the plurality of layers of interconnect, the first and second regions are for providing one of either a wire bond region or a probe region, and the probe region is formed entirely over the layer of passivation;
the method comprising:
applying a first test probe to the first region of the first bond pad;
applying a second test probe to the second region of the second bond pad;
forming a wire bond on the second region of the first bond pad; and
forming a wire bond on the first region of the second bond pad.
10. An integrated circuit, comprising:
a substrate having active circuitry and a perimeter;
a plurality of interconnect layers formed over the substrate, the plurality of interconnect layers having a final interconnect layer;
a plurality of bond pads formed in a line along the perimeter and over the final interconnect layer, wherein each of the plurality of bond pads having a first region and a second region, the first region being used only as a probe region, and the second region being used only as a wire bond region, and wherein the plurality of interconnect layers and active circuitry directly underlie the plurality of bond pads; and
a passivation layer formed over the final interconnect layer and having a plurality of openings, each of the plurality of openings corresponding to one of the plurality of bond pads, wherein the first region of each of the plurality of bond pads extends entirely over the passivation layer.
11. The integrated circuit of claim 10 , wherein the plurality of interconnect layers and the plurality of bond pads comprise copper.
12. The integrated circuit of claim 11 , further comprising a plurality of aluminum pads, each of the plurality of aluminum pads formed on one of the plurality of bond pads.
13. The integrated circuit claim 10 , wherein the plurality of bond pads are formed in a line along the perimeter, and wherein the second region of each bond pad is closer to the perimeter of the substrate than the first region of each bond pad.
14. The integrated circuit of claim 10 , wherein the plurality of bond pads are formed in a line along the perimeter, and wherein second regions of adjacent bond pads are substantially an equal distance from the perimeter, and the first region of adjacent bond pads alternate from a side of the second region relatively closer to the perimeter to another side of the second region relatively farther from the perimeter.
15. The integrated circuit of claim 10 , wherein the plurality of bond pads are formed in a line along the perimeter, and wherein the first regions of odd numbered bond pads of the plurality of bond pads are located a first distance from the perimeter and the first regions of even numbered bond pads of the plurality of bond pads are located a second distance from the perimeter, the first distance being farther from the perimeter than the second distance.
16. The integrated circuit of claim 15 , wherein second regions of the odd numbered bond pads are located the second distance from the perimeter and second regions of the even numbered bond pads are located the first distance from the perimeter.
17. The integrated circuit of claim 10 , wherein the plurality of bond pads are formed in a line along the perimeter, and wherein the first and second regions of each of the plurality of bond pads are formed substantially an equal distance from the perimeter.
18. The integrated circuit of claim 10 further comprising a wire bond attached to a portion of the wire bond region.