Magnetoresistive stack with enhanced pinned layer
View Patent ↗A magnetoresistive stack includes a free layer, a separating layer, a pinned layer, and a magnetic stabilizer in close proximity to the pinned layer such that such that the magnetic stabilizer enhances the stability of the magnetization direction of the pinned layer.
1. A magnetoresistive stack comprising:
a free layer having a rotatable magnetic moment;
a pinned layer having a fixed magnetic moment, wherein the pinned layer has a greater cross-sectional dimension than the free layer and the pinned layer has a greater lateral dimension than the free layer;
a separating layer positioned between and in contact with the free layer and the pinned layer; and
a magnetic stabilizer in close proximity to the pinned layer and spaced from the pinned layer, wherein the magnetic stabilizer induces a magnetic field with a same magnetic orientation as the pinned layer, increasing stability of magnetic orientation of the pinned layer.
2. The magnetoresistive stack of claim 1 wherein the magnetic stabilizer is proximate the surface of the pinned layer on a side furthest from the free layer.
3. The magnetoresistive stack of claim 1 wherein the magnetic stabilizer is proximate the surface of the pinned layer on a side closest to the free layer.
4. The magnetoresistive stack of claim 1 wherein the magnetoresistive stack is one of a group consisting of magnetic tunneling transistor, spin valve transistor, read head, magnetic random access memory and magnetic sensor.
5. The magnetoresistive stack of claim 1 wherein the separating layer is a spacer layer.
6. The magnetoresistive stack of claim 1 wherein the separating layer is a tunneling barrier.
7. The magnetoresistive stack of claim 1 wherein the pinned layer is at least about 2 times as long and about 1.2 times as wide as the free layer.
8. A magnetoresistive stack comprising:
a free layer having a rotatable magnetic moment;
a pinned layer having a fixed magnetic moment, wherein the pinned layer has a greater cross-sectional dimension than the free layer and has a greater lateral dimension than the free layer;
a separating layer positioned between and in contact with the free layer and the pinned layer; and
a conductor placed in close proximity to the pinned layer for conducting electrical current to induce a magnetic field with a same magnetic orientation as the pinned layer, increasing stability of magnetic orientation of the pinned layer.
9. The magnetoresistive stack of claim 8 wherein the separating layer is a spacer layer.
10. The magnetoresistive stack of claim 8 wherein the separating layer is a tunneling barrier.
11. The magnetoresistive stack of claim 8 wherein part of the surface of the conductor is covered by a cladding.
12. The magnetoresistive stack of claim 8 wherein the conductor is proximate to a surface of the pinned layer furthest from the free layer.
13. The magnetoresistive stack of claim 8 wherein the conductor is proximate to a surface of the pinned layer closest to the free layer.
14. The magnetoresistive stack of claim 8 further comprising a second conductor placed in close proximity to a surface of the pinned layer furthest from the free layer for conducting electrical current to induce a magnetic field with a same magnetic orientation as the pinned layer, increasing stability of magnetic orientation of the pinned layer.
15. The magnetoresistive stack of claim 8 wherein the magnetoresistive stack is one of a group consisting of magnetic tunneling transistor, spin valve transistor, read head, magnetic random access memory and magnetic sensor.