Power-up implementation for block-alterable memory with zero-second erase time
View Patent ↗A block-alterable memory, e.g., a flash memory, having substantially zero erase time is coupled to host. The block-alterable memory includes a controller that reads block information from the memory on power up to determine if a block of the memory is usable. The controller updates block map latches only if the block is usable. The controller also updates block status latches according to the block information. Thus, information about each block of the memory is easily accessible in the latches when the block alterable memory becomes ready for use on power up.
1. A method comprising:
reading block information from a block-alterable memory on power up of the memory;
determining if a block of the block-alterable memory is dirty based on a second information located in the block only if the block is not bad;
marking a dirty status field for the block in a block status latch, ending the analysis for the block, and selecting a next block for analysis, if reading the second information indicates the block is dirty;
updating address mapping information for the block only if the block is not bad and not dirty; and
marking an available status field for the block in the block status latch only if the block is neither bad nor dirty.
2. The method of claim 1 , further comprising:
determining if the block is bad.
3. The method of claim 1 wherein updating address mapping information further comprises:
updating the address mapping information after an internal voltage of the block alterable memory reaches a minimum level and an internal charging process is completed.
4. The method of claim 1 wherein updating address mapping information further comprises:
storing all of logical addresses and corresponding physical addresses of the block alterable memory in a volatile memory.
5. The method of claim 1 further comprising:
updating block status for the block in a volatile memory.
6. The method of claim 5 wherein updating block status further comprises:
marking one of a dirty status, an available status, and a bad status for each of physical blocks of the block alterable memory.
7. The method of claim 5 further comprising:
completing the power up of the block alterable memory after the updating of address mapping information and the updating of block status.
8. An apparatus comprising:
a block-alterable memory including
mapping latches to store address mapping information; and
a controller coupled to the memory and the mapping latches to:
read block information from the block-alterable memory on power up of the memory;
determine if a block of the block-alterable memory is dirty based on a second information located in the block only if the block is not bad;
mark a dirty status field for the block in a block status latch, ending the analysis for the block, and selecting a next block for analysis, if reading the second information indicates the block is dirty;
update the mapping latches only if the block is not bad and not dirty; and
mark an available status field for the block in the block status latch only if the block is neither bad nor dirty.
9. The apparatus of claim 8 wherein the controller further comprises:
a status decision unit to determine if the block is one of bad and dirty.
10. The apparatus of claim 8 wherein the mapping latches further comprise:
storage elements to store all of logical addresses and corresponding physical addresses of the block alterable memory.
11. The apparatus of claim 8 further comprising:
block status latches to record a status of the block.
12. The apparatus of claim 11 wherein the block status latches further comprise:
storage elements to store at least a dirty status field, an available status field, and a bad status field for each of physical blocks of the block alterable memory.
13. The apparatus of claim 8 further comprising:
an internal latch update signal generator coupled to the controller to generate a pulse to trigger the updating of the mapping latches, wherein the pulse is generated after an internal voltage reaches a maximum level and an internal charging process is completed.
14. A system comprising:
a block-alterable memory including:
mapping latches to store address mapping information;
a controller coupled to the memory and the mapping latches to:
read block information from the block-alterable memory on power up of the memory;
determine if a block of the block-alterable memory is dirty based on a second information located in the block only if the block is not bad;
mark a dirty status field for the block in a block status latch, ending the analysis for the block, and selecting a next block for analysis, if reading the second information indicates the block is dirty; and
update the mapping latches only if the block is not bad and not dirty;
mark an available status field for the block in the block status latch only if the block is neither bad nor dirty; and
a battery-operated host in communication to the block-alterable memory.
15. The system of claim 14 wherein the controller further comprises:
a status decision unit to determine if the block is one of bad and dirty.
16. The system of claim 14 wherein the mapping latches further comprise:
storage elements to store all of logical addresses and corresponding physical addresses of the block alterable memory.
17. The system of claim 14 further comprising:
block status latches to record a status of the block.
18. The system of claim 17 wherein the block status latches further comprise:
storage elements to store at least a dirty status field, an available status field, and a bad status field for each of physical blocks of the block alterable memory.
19. The system of claim 14 further comprising:
an internal latch update signal generator coupled to the controller to generate a pulse to trigger the updating of the mapping latches, wherein the pulse is generated after an internal voltage reaches a maximum level and an internal charging process is completed.
20. A method comprising:
starting a power up initialization process having actions to analyze every block in a block alterable memory including:
selecting a block for analysis;
reading a first information that indicates whether the block is bad, the first information is located separate from the block;
marking a bad status field for the block in a block status latch, ending the analysis for the block, and selecting a next block for analysis, if reading the first information indicates the block is bad;
reading a second information that indicates whether the block is dirty only if reading the first information indicates the block is not bad, the second information is located in the block;
marking a dirty status field for the block in the block status latch, ending the analysis for the block, and selecting the next block for analysis, if reading the second information indicates the block is dirty;
updating a physical address and a logical address of the block in a block map latch only if the block is neither bad nor dirty; and
marking an available status field for the block in the block status latch only if the block is neither bad nor dirty.