Method for fabricating a semiconductor device
A method of fabricating a semiconductor device includes the steps of, after sawing a semiconductor substrate into individual semiconductor chips in a state that the semiconductor substrate is covered by an adhesive tape, applying a dry gas to the adhesive tape in a state that the adhesive tape carries thereon the semiconductor chips, applying an infrared radiation to the adhesive tape in a state that the adhesive tape carries thereon the semiconductor chips, and curing the adhesive layer on the adhesive tape in a state that the adhesive tape carries thereon the semiconductor chips, by irradiating a ultraviolet radiation to the adhesive tape, wherein the step of applying the dry gas, the step of applying the infrared radiation and the said step of curing the adhesive layer are conducted substantially simultaneously.
1. A method of fabricating a semiconductor device, comprising the steps of:
covering a surface of a semiconductor substrate by an adhesive tape carrying thereon an ultraviolet-curing type adhesive layer;
sawing said semiconductor substrate into individual semiconductor chips in a state that said semiconductor substrate is covered by said adhesive tape;
applying an infrared radiation to said adhesive tape in a state that said adhesive tape carries thereon said semiconductor chips; and
curing said adhesive layer on said adhesive tape in a state that said adhesive tape carries thereon said semiconductor chips, by irradiating an ultraviolet radiation to said adhesive tape;
said step of applying said infrared radiation and said step of curing said adhesive layer being conducted substantially simultaneously in a nitrogen atmosphere.
2. A method of fabricating a semiconductor device, comprising:
a sawing step of forming a dividing groove for dividing a semiconductor substrate adhering to a front surface of a ultraviolet-curing type tape into individual semiconductor chips while cooling liquid is sprayed upon the semiconductor substrate; and
a drying and curing step wherein i) a drying step of applying an inert gas to the front surface of the ultraviolet-curing type tape and irradiating a heat radiation and an ultraviolet radiation to a back surface of the ultraviolet-curing type tape so that the ultraviolet-curing type tape is heated by the heat radiation and the semiconductor substrate and ultraviolet-curing type tape are dried by the inert gas, and ii) a curing type tape by irradiating the ultraviolet radiation to the ultraviolet-curing type tape, are conducted concurrently.
3. The method as claimed in claim 2 , further comprising:
a cleaning step of spraying a cleaning liquid upon the front surface of the ultraviolet-curing type tape and the semiconductor substrate after the sawing step but before the drying and curing step.
4. The method as claimed in claim 2 ,
wherein the sawing step is conducted such that the dividing groove formed in the semiconductor substrate as a result of the sawing has a depth equal to a thickness of the semiconductor substrate and thereby the semiconductor substrate is completely cut out.
5. The method as claimed in claim 2 ,
wherein a polyolefin resin film is used for a tape of the ultraviolet-curing type, and
the drying step is conducted such that temperature of the semiconductor substrate and the ultraviolet-curing type rise to a range between about 90° C. and about 140° C.