Method of manufacturing a semiconductor device
View Patent ↗An electrode on a semiconductor substrate includes a polysilicon layer, a silicon-implanted layer on the polysilicon layer, a tungsten nitride layer on the silicon-implanted layer, a tungsten nitride layer on the silicon-implanted layer, and a tungsten layer on the tungsten nitride layer. The layer between the polysilicon layer and the tungsten nitride layer may be either a tungsten silicon nitride layer or a silicon-germanium layer.
1. A method of manufacturing a semiconductor device comprising:
forming a gate insulating film on a semiconductor substrate;
forming a polysilicon layer on said gate insulating film;
forming a silicon-germanium layer on said polysilicon layer by forming a germanium layer on said polysilicon layer and thermally treating said germanium layer in an ambient of one of nitrogen and ammonia;
forming a tungsten nitride layer on said silicon-germanium layer; and
forming a tungsten layer on said tungsten nitride layer.