Semiconductor device
View Patent ↗A semiconductor device includes a semiconductor substrate, an electrode pad, a wiring, a conductive post, an insulator, a sealing resin, and an external electrode. The electrode pad is formed on the main surface of the semiconductor substrate. The wiring is formed above the semiconductor substrate, the wiring electrically connecting with the electrode pad. The conductive post is formed on the upper surface of the wiring, the conductive post electrically connecting with the wiring. The insulator is formed on the lateral surfaces of the conductive post and has a thermosetting property. The sealing resin is formed over the semiconductor substrate and the wiring and on the surface of the insulator. The external electrode is formed on the conductive post, the external electrode electrically connecting with the conductive post.
1. A semiconductor device, comprising:
a semiconductor substrate having an electronic circuit provided on a main surface thereof;
an electrode pad formed on the main surface of the semiconductor substrate;
a wiring formed above the semiconductor substrate, the wiring electrically connecting with the electrode pad;
a conductive post formed on the upper surface of the wiring, the conductive post electrically connecting with the wiring;
an insulator formed on the lateral sides of the conductive post, the insulator comprising a thermosetting material;
a sealing resin layer formed over the semiconductor substrate and the wiring, and on a surface of the insulator so that the insulator is sandwiched between the sealing resin layer and the conductive post; and
an external electrode formed on the conductive post, the external electrode electrically connecting with the conductive post.
2. The semiconductor device according to claim 1 , wherein the insulator is composed of silicone.
3. The semiconductor device according to claim 1 , wherein the insulator extends to the upper surface of the sealing resin layer.
4. The semiconductor device according to claim 3 , wherein the insulator is composed of silicone.
5. A semiconductor device, comprising:
a semiconductor substrate having an electronic circuit provided on a main surface thereof;
an electrode pad formed on the main surface of the semiconductor substrate;
a wiring formed above the semiconductor substrate, the wiring electrically connecting with the electrode pad;
a conductive post formed on the upper surface of the wiring, the conductive post electrically connecting with the wiring and having a top surface and lateral sides;
a sealing resin layer formed over the semiconductor substrate, the wiring, and the conductive post, and smoothed to expose the top surface of the conductive post whereby gaps. are created between the sealing resin layer and the lateral sides of the conductive post during smoothing;
an insulation layer formed in the gaps between the sealing resin layer and the lateral sides of the conductive post so that the insulation layer is sandwiched between the sealing resin layer and the conductive post, the insulation layer comprising a thermosetting material; and
an external electrode formed on the top surface of the conductive post, the external electrode electrically connecting with the conductive post.
6. The semiconductor device according to claim 5 , wherein the insulation layer is additionally formed on the top surface of the sealing resin layer.
7. The semiconductor device according to claim 5 , wherein the insulation layer is composed of silicone which is provided in the gaps as a thermosetting liquid and heated.