Semiconductor memory device and method of manufacturing the same
View Patent ↗A semiconductor memory device includes: a laminated body which has a floating-gate-forming groove and includes a semiconductor support layer, an impurity diffusion layer, an ion-implantation-damage protection film, and an interlayer insulating film; a floating-gate-insulating film; a floating gate disposed on the floating-gate-insulating film so as to be buried in the floating-gate-forming groove; a control-gate-insulating film disposed on a surface area of the floating gate; and a control gate disposed on the control-gate-insulating film above the floating gate, wherein the floating-gate-insulating film contacts with the semiconductor support layer at the bottom of the floating-gate-forming groove, the floating-gate-insulating film contacts with the impurity diffusion layer, the ion-implantation-damage protection film, and the interlayer insulating film at the side wall of the floating-gate-forming groove.
1. A method of manufacturing a semiconductor memory device comprising the steps of:
forming a laminated body having a floating-gate-forming groove which is formed in an floating-gate-forming area of the laminated body, the laminated body including a semiconductor support layer, an impurity diffusion layer formed on the semiconductor support layer, an ion-implantation-damage protection film formed on the impurity diffusion layer, and an interlayer insulating film formed on the ion-implantation-damage protection film, in such a way that the semiconductor support layer is exposed to a bottom of the floating-gate-forming groove, and the impurity diffusion layer, the ion-implantation-damage protection film, and the interlayer insulating film are exposed to a side wall of the floating-gate-forming groove;
forming a floating-gate-insulating film on an inner surface of the floating-gate-forming groove in such a way that the floating-gate-insulating film contacts with the semiconductor support layer at the bottom of the floating-gate-forming groove, the floating-gate-insulating film contacts with the impurity diffusion layer, the ion-implantation-damage protection film, and the interlayer insulating film at a side wall of the floating-gate-forming groove;
forming a floating gate on the floating-gate-insulating film so as to be buried in the floating-gate-forming groove;
forming a control-gate-insulating film on a surface area of the floating gate; and
forming a control gate on the control-gate-insulating film above the floating gate.
2. The method according to claim 1 , wherein the step of forming the laminated body includes the steps of:
forming the ion-implantation-damage protection film on a semiconductor substrate;
implanting an impurity ion into the semiconductor substrate through the ion-implantation-damage protection film to form an ion-implanted area in the semiconductor substrate;
performing activation-annealing of the semiconductor substrate, thereby changing the ion-implanted area to the impurity diffusion layer;
forming the interlayer insulating film; and
subsequently forming the floating-gate-forming groove.
3. The method according to claim 1 , wherein the step of forming the laminated body includes the steps of:
forming the ion-implantation-damage protection film on a semiconductor substrate;
implanting an impurity ion into the semiconductor substrate through the ion-implantation-damage protection film to form an ion-implanted area in the semiconductor substrate;
forming the interlayer insulating film;
forming the floating-gate-forming groove; and
subsequently performing activation-annealing of the semiconductor substrate, thereby changing an ion-implanted area to the impurity diffusion layer.
4. The method according to claim 1 , further comprising:
removing a part of the floating-gate-insulating film from an area where no control gate exists; and
filling up a part of the floating-gate-forming groove, where the floating-gate-insulating film is removed, with an insulating material.