Semiconductor device with reconfigurable logic
A semiconductor device includes multiple transistors ( 70, 75, 80, 85 ), each of the transistors ( 70, 75, 80, 85 ) including a gate electrode ( 18 ) formed above a semiconductor substrate ( 30 ), source/drain regions ( 10, 12, 14, 16 ) formed on both sides of the gate electrode ( 18 ), and a charge storage layer ( 38 ) interposed between the gate electrode ( 18 ) and the semiconductor substrate ( 30 ). One of the source/drain regions ( 10, 12, 14, 16 ) of adjacent transistors ( 70, 75, 80, 85 ) is respectively connected in series, so the above-mentioned multiple transistors ( 70, 75, 80, 85 ) form a closed loop in the semiconductor device. Accordingly, it is possible to provide a semiconductor device ( 60 ) in which the circuit function of the logic circuit ( 64 ) can be reconfigured in a non-volatile manner, thereby enabling wide selectivity and excellent design facility in terms of the circuit design and making it possible to readily fabricate the logic circuit ( 64 ) and a non-volatile memory ( 62 ) on a single chip ( 60 ).
1. A semiconductor device comprising:
a circuit comprising transistors, including at least a first transistor, a second transistor, and a third transistor, wherein each of the transistors includes:
a gate electrode formed above a semiconductor substrate;
source/drain regions formed in the semiconductor substrate below and on both sides of the gate electrode; and
a charge storage layer formed on and in direct contact with an upper surface of the semiconductor substrate and interposed between the gate electrode and the semiconductor substrate,
wherein the source/drain regions of the transistors are connected in series so as to form a closed loop, wherein the source/drain regions in adjoining transistors are respectively connected to form the closed loop, wherein the first transistor shares one of the source/drain regions with the second transistor, and the second transistor shares another one of the source/drain regions with the third transistor, and wherein a reconfigurable logical function of the circuit is selected by controlling an amount of charge stored in the charge storage layer of each of the transistors, and wherein the circuit can be configured as a non-volatile memory cell.
2. The semiconductor device as claimed in claim 1 , wherein the number of the transistors is equal to or more than four.
3. The semiconductor device as claimed in claim 1 , wherein the gate electrodes of the transistors are connected together.
4. The semiconductor device as claimed in claim 1 , wherein the charge storage layer of the transistors is an ONO film.
5. A semiconductor device comprising:
a plurality of non-volatile memory cells; and
a logic circuit including at least one reconfigurable circuit, wherein the at least one reconfigurable circuit comprises transistors, including at least a first transistor, a second transistor, and a third transistor, wherein each of the transistors of the at least one reconfigurable circuit comprises:
a gate electrode formed above a semiconductor substrate;
source/drain regions formed in a semiconductor substrate below and on both sides of the gate electrode; and
a charge storage layer formed on and in direct contact with an upper surface of the semiconductor substrate and interposed between the gate electrode and the semiconductor substrate, and
wherein the source/drain regions of the transistors are connected in series to form a closed loop, and wherein the source/drain regions in adjoining transistors are respectively connected to form the closed loop, and wherein the first transistor shares one of the source/drain regions with the second transistor, and the second transistor shares another one of the source/drain regions with the third transistor, and
wherein the at least one reconfigurable circuit has a logical function that can be reconfigured in a non-volatile manner by varying the threshold voltage of one or more of the transistors, wherein the threshold voltage is varied by controlling an amount of charge stored in the charge storage layer of the one or more of the transistors, and wherein the plurality of non-volatile memory cells each includes a charge storage layer that is substantially the same as the charge storage layer of each of the transistors of the reconfigurable circuits.
6. The semiconductor device as claimed in claim 1 wherein the circuit is selected from a group of logic circuits consisting of an AND circuit, an OR circuit, an inverter circuit, a NAND circuit, and a NOR circuit.
7. The semiconductor device as claimed in claim 6 wherein the circuit is defined by the logical function performed by the transistors thereof.
8. The semiconductor device as claimed in claim 5 wherein the at least one reconfigurable circuit is selected from a group of circuits consisting of an AND circuit, an OR circuit, an inverter circuit, a NAND circuit, and a NOR circuit.
9. The semiconductor device as claimed in claim 5 , wherein the charge storage layers of the plurality of non-volatile memory cells and the charge storage layers of the transistors of the at least one reconfigurable circuit are ONO films.
10. The semiconductor device as claimed in claim 8 wherein the at least one reconfigurable circuit is defined by the logical function performed by the transistors thereof.
11. The semiconductor device as claimed in claim 5 , wherein the number of the transistors is equal to or more than four.
12. The semiconductor device as claimed in claim 5 , wherein the gate electrodes of the transistors are connected together.